SiC Coated Pancake Susceptor pro LPE PE3061S 6'' Wafers
SiC Coated Pancake Susceptor pro LPE PE3061S 6'' lagana una est nucleorum partium in 6'' lagana epitaxialis lagani processus. VeTek Semiconductor praesens est opificem et supplementum e Pancake SiC Coated Susceptoris pro LPE PE3061S 6'' lagana in Sinis. SiC Coated Pancake Susceptor praebet egregias proprietates ut princeps corrosio resistentia, bonum scelerisque conductivity, et bonum uniformitatem. Exspecto tuam inquisitionem.
Sicut professional manufacturer, Vetek Semiconductor vellem providere vobis princeps qualis sic iactaret pancake susceptos pro LPE pe3061s VI '' wafers.
Et Vetisech Semiconductor Sic iactaret pancake susceptator pro LPE pe3061s VI "wafers est a critica apparatu usus in semiconductor faciens processus.
Sic iactaret Pancake Conceptos enim LPE pe3061s VI "Wafers Product Features:
High-temperatus stabilitatem: sic exhibits optimum summus temperatus stabilitatem, maintaining eius structuram et perficientur in summus temperatus environments.
Pellentesque scelerisque conductivity: Sic habet eximia scelerisque conductivity, enabling celeri et uniformis æstus translatio ad ieiunium et etiam calefactio.
ROSIO resistentia: Sic haberet optimum chemical stabilitatem, resistente corrosio et oxidatio in variis calefactio environments.
Distributio calefactionis uniformis: Tabellarius laganum SiC iactans uniformem calefactionem praebet distributionem, procurans etiam temperaturam per superficiem lagani in calefactione.
Apta ad productionem semiconductorem: Si epitaxy laganum ferebat late in processibus fabricandis semiconductoribus adhibitis, praesertim pro incremento Si epitaxia et aliis processibus calidis calidis.
Product commoda:
Melius productionem efficientiam: Sic-iactaret pancake susceptos dat ieiunium et uniformis calefactio, reducendo calefactio et enhancing productio efficientiam.
Usus productum Quality: Uniform Heating Distribution ensures constantia durante laganum processui, ducens ad melius productum.
Apparatum vitae extensum: SiC materia optimum calorem resistentiae et stabilitatis chemicae praebet, ad longiorem spatium susceptoris subcinericii conferens.
Nativus solutions: Sic-iactaret susceptator, si epitaxy laga carrier potest esse tailored ad diversas magnitudinum et cubits fundatur in elit.
Basic physica proprietatibus CVD sic coating:
Basicae physicae proprietates CVD SiC coating
Res
Typical valorem
Crystal structure
FCC β Phase polycrystallina, maxime (111) ordinatur
Density
3,21 G / CM³
duritia
MMD Vickers Duritia (500g Load)
Frumea magnitudine
2~10μm
Chemical castitas
99,99995%
Calor Capacity
DCXL J · k-1· K-1
Sublimation Temperatus
2700℃
Flexurae Fortitudo
415 MPa RT 4-punctum
Young 's modulo
CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque Conductivity
300W · M-1· K-1
Thermal Expansion (CTE)
4.5 × X-6K-1
Servo Semiconductor
Overview of the semiconductor chip epitaxy industry catena:
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