Products
SIC iactaret auxilium pro LPE Pe2061s
  • SIC iactaret auxilium pro LPE Pe2061sSIC iactaret auxilium pro LPE Pe2061s

SIC iactaret auxilium pro LPE Pe2061s

Vetek semiconductor est ducens manufacturer et elit de sic iactaret graphite components in Sinis. Sic tunicas Support LPP Pe2061s apta LPY Silicon Epitaxial reactor. Sicut fundum in dolium basis, sic coated firmamentum pro LPE pe2061s potest sustinere altum temperaturis de MDC gradibus Celsius, ita Achieving Ultra-Long Product vitae et reducendo Customer costs. Exspecto inquisitionis et adhuc communicationis.

Vetek Semiconductor sic stillam pro LPE pe2061s in Silicon epitaxy apparatu, in conjunction cum dolium genus susceptor ad firmamentum et tenere epitaxial lana (vel subiecta) in epitaxial augmentum processus.

MOCVD barrel epitaxial furnace


Et deorsum laminam maxime usus est in dolium epitaxial fornace, in dolium epitaxial fornacem habet maius reactionem aethereax et altiorem productio efficientiam quam plana epitaxial susceptator. Support habet per foraminis consilio et praesertim propter exhauriunt exitum intus reactor.


LP Lple Pe2061s est Silicon Carbide (sic) iactaret Graphite Support basi disposito pro semiconductor vestibulum et provectus materia processus, idoneam ad altum temperatus, summus praecisione vapor Depositio Mocvd, etc.). Core consilio combines dual beneficia summus puritas graphite subiectis cum densa sic coating ad curare stabilitatem, corrosio resistentia et scelerisque uniformitatem sub extrema conditiones.


Core proprium


● Maximum temperatus resistentia:

SIC coating potest sustinere altum temperaturis supra MCC ° C et scelerisque expansion coefficiens est altus matched cum graphite subiectis vitare accentus fregisset ex temperatus fluctuations.

●  Optimum scelerisque uniformitatem:

Et densa sic coating, formatae a eget vapor depositione (cvd) technology, ensures uniformis calor distribution in superficiem basi et amplio in uniformitatem et puritatem epitaxial film.

●  Oxidatio et corrosio resistentia:

Sicque coating omnino operit graphite subiecta, obturans oxygeni et mordax vapores (ut NH₃, H₂, etc), significantly ad vitam basi.

●  Maximum Mechanica Fortitudo:

Et coating est princeps vinculum vires cum graphite vulvam et potest resistere multiple summus temperatus et humilis-temperatus circuitus, reducendo periculum damnum fecit per scelerisque inpulsa.

●  Ultra Puritas:

Occursum Stringent immunditia contentus requisita de semiconductor processus (metallum immunditiam contentus ≤1ppm) ad vitare contaminating wafers aut epitaxial materiae.


Technical


●  CONPONOR: Per chemical vapor depositione (cvd) et altum temperatus embedding modum, uniformis et dense β-sic (3c-sic) coating formatae in superficies stabilitatem.

●  Praecisione machiningEt basis est subtiliter machined per cnc machine instrumenta et superficiem asperitas est minus quam 0.4μm, quod est idoneam ad altum praecision lagunculi afferentem requisita.


PRAEGRESSUS


 Mocvd Equipment: Gan, sic et alia compositis semiconductor epitaxial incrementum, firmamentum et uniformis calefacit subiectum.

●  Silicon / sic epitaxy: Ensures High Quality Depositionem De Epitaxy stratis in Silicon aut Sic Semiconductor vestibulum.

●  Liquid tempus nudabunt (LPE) Processus: Adaptos ultrasonic auxiliaris material expoliantes technology providere firmum firmamentum platform duos-dimensiva materiae ut Graphene et transitus metallum Chalcogenides.


Competitive


●  Internationalis species: Persequi benchmarking Toyotansso, sglcarbon et alia internationalis ducit manufacturers, idoneam in amet semiconductor apparatu.

●  SERVITIUM: Support Figura Discus figura, Farel figura et alia basi figura customization, in occursum consilium necessitatibus diversis cavis.

●  Localization commodum: Supple cycle, providere celeri technica responsio, reducere copia torquem metus.


Qualitas fide


●  Rigorous temptationis: Densitas, crassitudo (typical valorem C ± 20μm) et compositionem puritatis de coating sunt verificatur per sem, xrd et alia analytica modo.

 Reliability test: Simulate in ipsa processum environment ad altum temperatus exolvuntur (M ° c → locus temperatus, ≥100 temporibus) et corrosio resistentia test ut diu-term stabilitatem.

 Convenit industries: Semiconductor vestibulum, duxit epitaxy, RF fabrica productio, etc.


SEM Data et structuram CVD sic films:

SEM data and structure of CVD SIC films



Basic physica proprietatibus CVD sic coating:

Basic physica proprietatibus CVD sic coating
Res Typical valorem
Crystal structure FCC β tempus Polycrystalline, maxime (CXI) Oriented
Densitas 3,21 G / CM³
Durities MMD Vickers Duritia (500g Load)
Frumea magnitudine II ~ 10mm
Chemical castitas 99,99995%
Calor DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flacalis fortitudinem CDXV MPA Rt IV-Point
Young 's modulo CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


Compare semiconductor productio tabernam:

VeTek Semiconductor Production Shop


Overview de Semiconductor chip epitaxy Industry catenae:

Overview of the semiconductor chip epitaxy industry chain


Hot Tags: SIC iactaret auxilium pro LPE Pe2061s
Mitte Inquisitionem
Contactus info
Percontationes de Silicon Carbide Coating, Tantalum Carbide Coating, Graphite speciale vel indicem pretiosum, electronicam tuam nobis relinque et intra 24 horas erimus.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept