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Firmus Silicon Carbide

VeTek Semiconductor solidus Silicon Carbide magni ponderis est in plasma etching apparatu ceramico, carbide solidi pii (CVD pii carbide) Partes in apparatu includit etchingfocusing annulos, gas stillhead, lance, marginem annuli etc. Ob reactivitatem et conductivity solidi carbidi pii (CVD carbidi pii) ad vapores chlorinum - et fluorinum continentem etching vapores, est materia idealis pro plasma etching instrumento anulorum et aliorum. tium.


Verbi gratia, anulus focus est pars magna extra laganum posita et directa cum lagano, applicando anuli intentionem ad umbilicum plasma transeunte per anulum, ita ut plasma laganum ad meliorem uniformitatem ponat. expediendas. Anulus focus traditum e Pii or . e factus estvicus, proxumum silicon ut anulus communis materiae, prope ad conductivity siliconis lagani est, sed inopia est pauper etching resistentia in plasmate fluorino-continente, machinae partes materiae saepe adhibitae ad tempus, graves erunt. phaenomenon corrosio, graviter reducendo efficientiam suam efficiendi.


Solid SiC Focus RingPrincipium opus：

Working Principle of Solid SiC Focus Ring


Comparison of Si Based Ring Focusing and CVD SiC Focusing Ring

Comparison of Si Based Ring Focusing and CVD SiC Focusing Ring
Item And CVD SiC
Densitas (g/cm*3) 2.33 3.21
Cohors gap (eV) 1.12 2.3
Scelerisque conductivity (W/cm℃) 1.5 5
CTE (x10-6/℃) 2.6 4
Modulus elasticus (GPa) 150 440
Duritia (GPA) 11.4 24.5
Resistentia ad induendum et corrosio Pauper Praeclarus


VeTek Semiconductor offert carbidam silicon solidam (CVD carbidam pii) partes quasi SiC annulos pro instrumento semiconductoris positos. Pii carbide solidi nostri anulos positos outperformes silicones tradito in terminis vi mechanica, resistentia chemica, conductivity scelerisque, durabilitas summus temperatura, et resistentia Ion engraving.


Clavis notarum nostrarum SiC annulorum focusing includit:

Maximum densum ad reducta engraving rates.

Nulla magna cum bandgap.

Princeps scelerisque conductivity et humilis coefficiens expansionem scelerisque.

Superior impactio mechanica resistentia et elasticitas.

Alta duritia, resistentia, et corrosio resistentia.

Product perplasma depositionis vaporis chemica amplificatus (PECVD)technicis artibus, nostris SiC annulis positivis occurrentibus crebrescentibus postulationibus etingendi processuum in fabricandis semiconductoribus. Ordinantur ad altiorem plasmatis vim et industriam sustinere, specie incapacitively plasma copulatum (CCP)disciplinas.

VeTek Semiconductor's SiC anulos positos praebent eximiam observantiam et constantiam in fabrica fabricandis semiconductoris. Nostrum Sic partes pro superiori qualitate et efficacia elige.


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Puritas CVD sic Rudis Material

Puritas CVD sic Rudis Material

Puritas CVD Sic Rudis Material paratus a CVD est optimus source materia ad Silicon carbide crystallum incrementum a corporalis vapor onerariam. CVD sic cvd sola crudi materiale in altum puritatis, quod est altior quam parvum particulas formatae per spontaneo de spontanea et C-continens vapores et non requirit dedicated rate. Potest crescere maxime princeps qualitas sic una crystallis. Exspecto inquisitionis.
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Solidum sic wafer carrier

Solidum sic wafer carrier

Vetek Semiconductor solidum sicca sicca carrier est disposito ad altum temperatus et corrosio repugnant environments in semiconductor epitaxial processus et apta omnium genera laganum vestibulum processus cum excelsum pura requisita. Vetek Semiconductor est a ducens laganum carrier elit in Sina et vultus deinceps ad decore vestri diu term particeps in semiconductor industria.
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Solidum sic discus informibus imber caput

Solidum sic discus informibus imber caput

Vetek Semiconductor est ducens Semiconductor apparatu Manufacturer in Sina et professional manufacturer et elit solidum sic disco informibus imber caput. Nostrum pervideo figura imber caput est late in tenuis film depositione productio ut CVD processus ut uniformis distribution of reaction Gas et unus ex Core components of CVD fornace.
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SID SIB

SID SIB

Ut an provectus SIC sectore pars productum manufacturer et officinas in Sinis. Vetek Semiconducto SIC sectis pars est summus perficientur signa component late in semiconductor processus et alia extrema summus temperatus et alta pressura processibus. Receperint tua porro consultatio.
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Silicon carbide imber caput

Silicon carbide imber caput

Silicon carbide imber caput habet optimum summus temperatus tolerantia, eget stabilitatem, scelerisque conductivity et bonum Gas distribution perficientur, quae potest consequi uniformis Gas distribution et amplio film qualis. Ideo solet usus est in altum temperatus processuum ut eget vapor depositione (CVD) vel physica vapor depositione (PVD) processibus. Receperint tuum Praeterea consultationem ad nos, Vetisk Semiconductor.
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Silicon Carbide Sigillum Ring

Silicon Carbide Sigillum Ring

Ut a professional Silicon Carbide Sigillum Ring Product Manufactorer et Factory in Sina, Vetek Semiconductor Silicon Carbide Sigillum Ring est late in semiconductor processui apparatu ex eius optimum æstus resistentia, corrosio resistentia, mechanica et scelerisque conductivity. Est maxime idoneam pro processibus involving summus temperatus et reactivum vapores ut CVD, PVD et Plasma Etching et est a key materia choice in semiconductor vestibulum processus. Vestri porro inquiries sunt grata.
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Sicut professionalis {LXXVII} Manufacturer et elit in Sina, habemus nostram officinam. Utrum vos postulo customized servicia in occursum specifica necessitatibus vestris regione vel volunt emere provectus et durabile {LXXVII} in Sina, vos potest relinquere nos nuntium.
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