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Silicon Carbide Solidae

Vetek semiconductor solidum Silicon carbide est momenti tellus component in Plasma Etching Equipment, solidum Silicon Carbide (CVD Silicon Carbide) Partibus in Etching apparatu includitfocusing annulos, Gas showhead, Tray, Edge Annulorum, etc Ob ad humilis Reactivity et conductivity solidum Silicon Carbide (CVD Silicon Carbide) ad CHLORUM - et Plasma Plasma Etching Equipment Focusing Annulorum et aliarum components.


Exempli gratia, in focus anulus est momenti pars positus extra laganum et in directum contactus cum laganum, per applicando ad anulum ad focus in plasma transiens per anulum, ita focusing ad plasma in laganum ad amplio in dispensando. Traditional Focus anulus factum est de Silicon autquartz, PROLIXUS Silicon ut communis focus anulum materia, quod est fere prope ad conductivity Silicon Wafers, sed penuria est pauper etching resistentia in fluorine, continens Plasma, etching apparatus partibus, ut saepe usus est ad tempus, ibi erit gravis productionis.


Solid sic focus circulumOpus

Working Principle of Solid SiC Focus Ring


Et secundum collatio Focusing circulum et CVD sic focusing circulum:

Compare de Si fundatur focusing circulum et cvd sic focusing circulum
Item Et Cvd sic
Density (g / cm3) 2.33 3.21
Cohors Gap (Ev) 1.12 2.3
Thermal conductivity (W / cm ℃) 1.5 5
CTE (X10-6/ ℃) 2.6 4
Elastica modulus (GPA) 150 440
Durness (GPA) 11.4 24.5
Resistentia ad induendum et corrosio Pauper Praeclarus


Vetek semiconductor offert provectus solidum Silicon Carbide (CVD Silicon Carbide) partibus quasi sic focusing annulos ad semiconductor apparatu. Nostra solida Silicon carbide focusing annulos outperform traditional Silicon in terms of mechanica vires, eget resistentia, scelerisque conductivity, summus temperatus diuturnitatem, et Ion etching resistentia.


Key features nostri sic focusing annulos includit:

Maximum density ad reducitur etching rates.

Optimum Valerius cum summus bandgap.

High scelerisque conductivity et humilis coefficiens de scelerisque expansion.

Mechanica impulsum resistentia et elasticitas.

High duritia, gerunt resistentia, et corrosio resistentia.

Usura fabricaPlasma-amplificata eget vapor depositione (Pecvd)Techniques, nostri sic focusing annulos occursum augendae postulat etching processus in semiconductor vestibulum. Sunt disposito resistere altius plasma virtutis industria, specie inCapacitaliter coniungar Plasma (CCP)systems.

Vetek Semiconductor est Sic Porcek Annulorum providere eximia perficientur et reliability in semiconductor fabrica fabrica. Elige nostrum sic partes pro superior species et efficientiam.


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CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

VETEK CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Capsule ordinatur ad celeri processus scelerisque (RTP) et celeri thermarum furnarum (RTA) systemata in fabricandis semiconductoribus adhibitis. Ex alto puritate isostatico graphite denso CVD SiC fabricatur, praestantem stabilitatem scelerisque, excellentem temperaturam uniformitatem, resistentiam chemicam superiorem, et generationem ultra-humilem. Machinator ad resistendum crebris calefactionibus et refrigerationibus cyclis rapidis, tabellarius laganum firmum adiuvat et processus stabilis perficiendi pro furnum laganum pii et aliae applicationes semiconductores altae temperaturae.
CVD Silicon Carbide (SiC) Coated RTP Susceptor

CVD Silicon Carbide (SiC) Coated RTP Susceptor

CVD SiC obductis RTP susceptor a VeTek Semiconductor ministrat celeri processui scelerisque (RTP) et celeri instrumento thermarum furnario (RTA) adhibito per fabricam semiconductorem. Subiectum machinatur ex alto puritatis graphite isostatico, super quo stratum densum CVD pii carbide (SiC) reponitur. Haec constructio magnam praebet conductivity scelerisque, inertiae chemica robustae, et stabilitatem dimensionalem sustinens sub iteratione caliditatis cycli.
Firmus SiC Focus Annulorum

Firmus SiC Focus Annulorum

Solidum laganum zonam sequi destinatum, Solidum SiC Focus Ringum plasma lineari distributionem et ora-ad centrum etch profiles exigere. Hae partes premium β-SiC aedificant a Vetek Semiconductor (Wuyi Tianyao Nova Materia Technologia Co, LTD) usus proprietatis chemicae Vapor Depositio (CVD) technicae artis. Per materias rudis in densam, energentem matricem vaporando, Vetek rarefactionem parvarum hiatus in vetustioribus materiis communem eliminat. Comparatus ad vexillum vicus vel silicon protegens, nostri CVD SiC componentes longe melius sunt vapores halogenis mordaces, laganum sub- 7nm logicae profunde protegens et densa memoria in fabricando.
Solidum Silicon Carbide Focusing Ringum 

Solidum Silicon Carbide Focusing Ringum 

Veteksemicon Carbide solidus Silicon (SiC) Focusing Annulus est pars critica consumabilis adhibita in epitaxy semiconductor provecta et processuum plasma etching, ubi certa moderatio plasmatis distributionis, uniformitatis scelerisque, et ora lagani effectus essentialis est. Hic anulus positus ex solida puritate carbide pii fabricata ostendit eximiam plasma exesa resistentiam, summus temperaturae stabilitatem, et inertiae chemicae, ut certae operationis sub condiciones processus pugnantibus efficiat. Tuam inquisitionem expectamus.
Silicon Carbide Focus anulus

Silicon Carbide Focus anulus

Veteksemicon anulus focus designatus specialiter ad semiconductorem etching apparatum exigendum, praecipue applicationes SiC engraving. Circumectus monax electrostatic (ESC), prope laganum, eius primarium munus est distributio campi electromagnetici intra cameram reactionem, ut actio plasmatis uniformis et focus per totam superficiem lagani. Summus perficientur focus anulum signanter meliorem etch rate uniformitatem et ora effectus minuit, directe boosting productum cedit et efficientiam efficiens.
Firmus SiC Focus Ring

Firmus SiC Focus Ring

Veteksemi solidus SiC anulus focus signanter auget et adaequationem uniformitatem et processus stabilitatem pressius moderans campum electricum et profluvium laganum in ore. In praecisione etching processibus siliconibus, dielectricis et semiconductoribus compositis late in usu est, et est praecipuum componentium ad efficiendum molem cessuram ac diuturnum certum apparatum operandi.

Veteksemicon solid silicon carbide is the ideal procurement material for high-temperature, high-strength, and corrosion-resistant components used in semiconductor and industrial applications. As a fully dense, monolithic ceramic, solid silicon carbide (SiC) offers unmatched mechanical rigidity, extreme thermal conductivity, and exceptional chemical durability in harsh processing environments. Veteksemicon’s solid SiC is specifically developed for critical structural applications such as SiC wafer carriers, cantilever paddles, susceptors, and showerheads in semiconductor equipment.


Manufactured through pressureless sintering or reaction bonding, our solid silicon carbide parts exhibit excellent wear resistance and thermal shock performance, even at temperatures above 1600°C. These properties make solid SiC the preferred material for CVD/PECVD systems, diffusion furnaces, and oxidation furnaces, where long-term thermal stability and purity are essential.


Veteksemicon also offers custom-machined SiC parts, enabling tight dimensional tolerances, high surface quality, and application-specific geometries. Additionally, solid SiC is non-reactive in both oxidizing and reducing atmospheres, enhancing its suitability for plasma, vacuum, and corrosive gas environments.


To explore our full range of solid silicon carbide components and discuss your project specifications, please visit the Veteksemicon product detail page or contact us for technical support and quotations.


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