Pii Carbide Coating

VeTek Semiconductor speciale in productione ultra purum Siliconis Carbide productorum Coating, hae tunicae ad graphites, ceramicos et metalla refractoria applicanda destinantur.

Nostrae puritatis altae coatinges praesertim in usu in semiconductoribus et in industriis electronicis iaculis sunt. Pro tutelae laganum baiulum, susceptores et elementa calefacientia inserviunt, ea custodiendo a ambitus mordax et reactiva, quae in processibus occurrunt, ut MOCVD et EPI. Hi processus integrales sunt processus lagani et fabrica fabricandi. Accedit, nostrae membranae aptae sunt applicationibus in fornacibus vacuo et calefactione exempli, ubi summus vacuum, reactivum et oxygenii ambitus offendit.

In VeTek Semiconductor, solutionem comprehensivam offerimus cum facultatibus machinarum machinarum provectorum. Hoc efficit ut basium componentium utentes graphite, ceramico, vel refractariis metallis fabricare, ac ceramicam SiC vel TaC coatings in aedibus adhibere possimus. Etiam operas efficiens praebemus ad partes suppeditatas, ut flexibilitas ad diversas necessitates occurrat.

Nostri Silicon Carbide Productorum Coating late usi sunt in epitaxy Si, epitaxy SiC, systema MOCVD, RTP/RTA processus, processus engraving, processus ICP/PSS engraving, processus variarum LED generum, inter caeruleum et viridem LED, UV LED et profunde UV DUXERIT etc., quod aptatur instrumentis ex LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI et sic porro.

Reactor partes facere possumus;

Pii Carbide Coing multa singularia commoda:

Silicon Carbide Coating several unique advantages

VeTek Semiconductor Silicon Carbide Coating Parameter

Basicae physicae proprietates CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β Phase polycrystallina, maxime (111) ordinatur
Sic coating densitas	3.21 g/cm³
Sic coatingHardness	MMD Vickers duritiem 500g onus
Frumenti amplitudo	2~10μm
Puritas chemica	99.99995%
Calor Capacity	640 J·kg^-1·K^-1
Sublimatio Temperature	2700℃
Flexurae Fortitudo	415 MPa RT 4-punctum
Modulus	430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity	300W·m^-1·K^-1
Scelerisque Expansion (CTE)	4.5×10-6K^-1

CVD SIC CRYSTALLOS STRUCTURA

CVD SIC FILM CRYSTAL STRUCTURE

Silicon Carbide obductis Epi susceptor SiC Coating Wafer Portitorem SiC obductis Satellite operculum MOCVD CVD SiC Coating Wafer Epi Susceptor CVD SiC coating Heating Elementum Aixtron Satellite laganum carrier SiC Coating Epi susceptor SiC coating halfmoon graphite parts

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Sic iactaret lagana carrier etching

Ut a ducens Seres Manufacturer et elit Silicon Carbide coating products, Veteksemicon scriptor SIC iactaret lagana carrier pro Etching Plays in irreparate core in stabilitatem et excelsis et excelsum scelerisque.

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CVD sic coated laganum susceptator

Veteksemicon cvd sic coarta lagana soccorductor is a secans-extreme solution pro semiconductor epitaxial processus, offering ultra-excelsum castitatem (≤100pp, ICP-E10 Certified) et eximination-repugnans-E10, sic, et Silicon-Based Ganna, Sic et Silicon-Based-SIC, SIC, et Silicon-Based Ganna, SIC, et Silicon-Based Ganna, SIC, et Silicon-Based Ganna, SIC, et Silicon-Based Ga-SIC, Silicon-Based-Lyers. Engineered cum praecisione CVD technology, quod sustinet VI "/ VIII" / XII "wafers, ensures minimal scelerisque accentus, et resistit extrema temperaturis usque ad MDC ° c.

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Sic iactaret planetarum susceptator

Nostrum sic iactaret planetarum susceptator est core component in altum temperatus processus of semiconductor vestibulum. Eius consilio combines Graphite substrate cum Silicon carbide coating ad consequi comprehensive optimization of scelerisque administratione perficientur, eget stabilitas et mechanica vires.

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Sic tunica signantes anulum pro epitaxy

Nostrum sic tunicas signantes anulum pro epitaxy est summus perficientur signa componentium fundatur in Graphite vel ipsum, Carbon Compositarum iactaret cum summus puritas Silicon carbide (cv), quod combines in SIC PRAETENTUM (CVD), quod combines in SICON (CVD), quod combines in SICON (CVD), quod combines in SICON (E.G. Mucvd, MBE).

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Single wafer epi graphite susceptor

Veteksemicon una lacus EPI graphite susceptator est disposito summus perficientur Silicon carbide (microform), Gallium Nitride (Games) et Alius Femiconductor EPITAAXIUS Sheet in Missam Production.Welcome tuum amplius inquisitionis.

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Plasma Etching Focus Orbis

An magna pars in laganum fabricatione etching processus est plasma etching focus anulus, cuius munus est tenere laganum in loco ad ponere plasma density et ne contagione et laganum side.vetek semiconductor providere Plasma Etching Plasma Plasma et Alia Material sicut Monocrystalline Silicon, Silicon Monocotyledones et Alia Ceramic Material.

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Sicut professionalis {LXXVII} Manufacturer et elit in Sina, habemus nostram officinam. Utrum vos postulo customized servicia in occursum specifica necessitatibus vestris regione vel volunt emere provectus et durabile {LXXVII} in Sina, vos potest relinquere nos nuntium.

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Pii Carbide Coating

Reactor partes facere possumus;

Pii Carbide Coing multa singularia commoda:

VeTek Semiconductor Silicon Carbide Coating Parameter

CVD SIC CRYSTALLOS STRUCTURA

Sic iactaret lagana carrier etching

CVD sic coated laganum susceptator

Sic iactaret planetarum susceptator

Sic tunica signantes anulum pro epitaxy

Single wafer epi graphite susceptor

Plasma Etching Focus Orbis

Mitte Inquisitionem

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De nobis

Products

Nobis loquere

Phone

Fax

E-mail

Oratio