Quid est sic coating key core materia quia sic epitaxial incrementum?

In CVD equipment, the substrate cannot be placed directly on the metal or simply on a base for epitaxial deposition, because it involves various factors such as gas flow direction (horizontal, vertical), temperature, pressure, fixation, and falling pollutants. Ideo autem basis est opus, et postea subiectum ponitur in disco, et deinde epitaxial depositionem fit in subiecto usura CVD technology. Haec basi estSic iactaret graphite basi.

As a core component, the graphite base has high specific strength and modulus, good thermal shock resistance and corrosion resistance, but during the production process, the graphite will be corroded and powdered due to the residual corrosive gas and metal organic matter, and the service life of the graphite base will be greatly reduced. Simul, cecidit graphite pulveris faciam contaminationem ad chip. In productio processusSilicon carbide epitaxial wafersDifficile est in occursum populus suus 'magis restrictius usum requisita pro graphite materiae, quae gravissime restringit suum progressionem et practical application. Ideo coating technology coepit oriri.

Commoda siccitatis sicco in siconductor industria

In physica et eget proprietatibus coating severa requisita ad altum temperatus resistentia et corrosio resistentia, quae directe afficiunt et vitam productum. Sic materia habet princeps vires, princeps duritia, humilis scelerisque expansion coefficient et bonum scelerisque conductivity. Est magna summus caliditas structural materiales et summus temperatus semiconductor materia. Est applicari ad Graphite basi. Et commoda sunt:

I) Sic est corrosio repugnans et potest plene involvent in graphite basi. Hoc est bonum density et fugit damnum abundantibus Gas.

II) Sic habet excelsum scelerisque conductivity et princeps vinculum vires cum graphite basi, cursus ut coating non facile cadere post plures summus caliditas et humilis temperatus cyclis.

III) Sic habet bonum eget stabilitatem vitare defectum de coating in summus temperatus et mordive atmosphaera.

Basic physica proprietatibus CVD sic coating

Insuper, epitaxial fornaces diversis materiae eget Graphite scutellas cum diversis perficientur Indicatores. Et ad matching de scelerisque expansion coefficiens de Graphite materiae postulat accommodationem ad incrementum temperatus de epitaxial fornace. Exempli gratia, temperatus estSilicon carbide epitaxyEst princeps et lance cum excelsum scelerisque expansion coefficiens matching non requiritur. Terraria expansion coefficiente sic est valde prope quod de Graphite, faciens idoneam ut maluit materia ad superficiem coating graphite basi.

Sic materiae a varietate crystal formas. Plurrimi communia sunt 3C, 4h et 6h. Sic est diversis crystal formas habet diversas usus. Exempli gratia, 4h-sic potest ad opus summus potentia cogitationes; 6H-sic est maxime firmum et potest ad officinis optoelectronic cogitationes; 3C-sic potest esse ad producendum gan epitaxial stratis et fabricantibus Sic-Gan RF cogitationes propter similia structuram ad Gan. 3c-sic etiam communiter referred to as β-sic. An magna usum β-sic est sicut tenuis film et coating materia. Ideo β-sic est currently in principalis materia ad coating.

Chemical, structuram-of-β-sic

Ut communis consumptibilis in semiconductor productio, sic coating est maxime in subiecto, epitaxy,oxidatio diffusio, Etching et Ion implantationem. In physica et eget proprietatibus coating severa requisita ad altum temperatus resistentia et corrosio resistentia, quae directe afficiunt et vitam productum. Ideo in parasceve sic est critica coating.