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Magnae resistentiae incrementum crystalli calefactionis SiC fornacis
  • Magnae resistentiae incrementum crystalli calefactionis SiC fornacisMagnae resistentiae incrementum crystalli calefactionis SiC fornacis

Magnae resistentiae incrementum crystalli calefactionis SiC fornacis

Silicon carbide cristallum incrementum est nucleus processus in fabricandis machinationibus semiconductoris summus perficiendi. Stabilitas, praecisio, et compatibilitas instrumentorum incrementi crystallini directe determinant qualitatem et reddunt ingots carbide Pii. Ex notis Vaporis Transporti Physici (PVT) technologiae, Veteksemi evolvit resistentiam calefaciendi fornacem siliconis carbidi crystalli incrementi, ut incrementum stabilium 6 pollicis, 8 inch, et 12-inch crystallorum carbidi pii cum plena congruentia cum conductivis, semi-insulantibus et N-typis materialibus systematibus. Per accuratam temperaturam, pressionem et potentiam, vitia crystallina efficaciter minuit ut EPD (Etch Pit Densitas) et BPD (Dislocationis Plane Basal), dum energiae humilis consummatio et pacta intentio ad alta signa productionis magnarum industriae occurrit.
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Technical Parameters

Parameter
 Specification
Incrementum Processus
 Corporis Vapor Transport (PVT)
calefactio Methodi
 Graphite resistentia calefactio
HABILIS Crystal Amplitudo
 VI inch, VIII inch, XII inch (switchable, camera postea tempus
Compatible Crystal Genera
 Genus conductivum, genus semi-insulating, N-type (plena series)
Maximum Operating Temperature
 ≥2400℃
Ultima Vacuum
 ≤9×10⁻⁵Pa (frigus fornax conditio)
Pressura Surge Rate
 ≤1.0Pa/12h (fornace frigida)
Crystal Incrementum Power
 34.0KW
Imperium Accuracy
 ± 0.15% (sub certis conditionibus)
Pressura Control Accuracy
 0.15Pa (scaena incrementum); fluctuatio <±0.001 Torr (ad 1.0Torr)
Crystalli defectus Density
 BPD < 381 ea/cm²; TED < 1054 ea/cm²
Crystal Incrementum Rate
 0.2-0.3mm/h
Crystal Incrementum Altitudo
 30-40mm
Altiore Dimensiones (W×D×H)
 ≤1800mm×3300mm×2700mm


Core Commoda


 ● Plena Location Compatibility

Augmentum stabilis dat 6-unc, 8-inch, et crystallis carbidi siliconis 12-inch, plene compatibile cum systematibus conductivis, semi-insulantibus et N-type materialibus. Necessitates productionis productorum cum diversis speciebus comprehendit et diversis missionibus applicationis adaptat.


Fortis Processus Stabilitas

Crystallina 8-uncia habent excellentiam 4H polytypi constantiam, figuram superficiei stabilem, et altam repeatabilitatem; the 12 inch pii carbide cristallina incrementum technologiae verificationem complevit magna cum facundia productionis massae.


Minimum Crystal defectus Rate

Per accuratam temperationis, pressi, et potentiae potestatem, vitia crystallina efficaciter reducuntur cum indicibus clavibus signis occurrentibus—EPD=1435 ea/cm², BPD=381 ea/cm², TSD=0 ea/cm², et TED=1054 ea/cm². Omnes defectus indicibus summus gradus qualitas cristalli requisita concurrunt, signanter meliorem regulam cedunt.


Controllable operating sumptibus

Infima industriae consummatio inter similia producta habet. Partes Core (ut scuta scelerisque velit) longum repositum cyclum 6-12 mensuum habent, deminuto sumptuum operarum comprehensivorum.


Plug-and-play Commoditas

Lorem recipe et processum fasciculi ex instrumentis notis, verificatur per longum tempus et multi-batch productionem, statim permittens productionem post institutionem.


Safety and Reliability

Peculiarem inducit consilium scintillae anti-arcum ad tollendas casus potentiales salutis; real-time vigilantia et praenuntia functiones proactively periculum operationis vitare.


Optimum Vacuum euismod

Ultimum vacuum et pressionis oriuntur indices rate praecipui gradus internationales excedunt, ut mundum environment ad crystallum incrementum capiant.


Intelligens Operatio et Sustentacionem

Features intuitivae HMI interfaciei cum notitia comprehensivarum recordantium coniuncta, ad libitum remota vigilantia munera sustinens pro administratione efficientis et opportunae productionis.


Visual Propono Core euismod


Temperature Control Accuracy Curve

Temperature Control Accuracy Curve

Temperatura subtiliter moderatur fornax cristalli incrementum ≤±0.3°C; Overview of the temperatus curvae



Pressura Control Accuracy Aliquam lacinia purus


Pressure Control Accuracy Graph

Pressura moderatio accurationis fornacei crystalli incrementum: 1.0 Torr, Pressura accurationis moderatio: 0.001 Torr


Virtus Stabilitas Precision


Firmitatem et constantiam inter fornaces / batches: Firmitas subtiliter potentiae

Power Stability Precision

Sub statu incrementi crystalli, subtilitas potestatis in incremento crystalli stabilis ±0.15% est.


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