VeTek semiconductor est primarius fabricae Tantali Carbide Coating materias semiconductoris industriae. Nostrae oblationes principales productae includunt partes CVD tantalum carbidam coatingas, partes tunicae TaC pro crystallo augmenti SiC vel epitaxiae semiconductoris. Transierunt ISO9001, VeTek Semiconductor bonam potestatem in qualitate habet. VeTek Semiconductor dicatus est innovator factus in Tantalum Carbide Coating industriam per permanentem inquisitionem et progressionem technologiarum iterativarum.
The main products are TaC Coated Guide Ring, CVD TaC coated three-petal guide ring, Tantalum Carbide TaC Coated Halfmoon, CVD TaC coating planetary SiC epitaxial susceptor, Tantalum Carbide Coating Ring, Tantalum Carbide Coated Porous Graphite, TaC Coating Rotation Susceptor, Tantalum Carbide Ring, TaC Coating Rotation Plate, TaC coated wafer susceptor, TaC Coated Deflector Annulus, CVD TaC Coating Cover, TaC Coated Chuck etc., puritas infra 5ppm est, mos requisita occurrere potest.
TaC graphite coating creatum est superficies graphitae altae puritatis substratae cum strato subtilissimo carbidi tantali per Depositionem Vaporis chemici proprietatis (CVD) processum. Commodum infra picturam monstratur:
Tantalum carbide (TaC) efficiens attentionem adepta est ob altitudinem eius liquescentis punctum usque ad 3880°C, excellentem vim mechanicam, duritiem et resistentiam ad pulsuum thermarum, quod carum alternatio facit ad compositiones semiconductoris epitaxy processuum cum requisitis calidioribus superioribus, ut Aixtron MOCVD systema et LPE SiC epitaxy processum. Etiam latum cristallinae incrementum habet in PVT methodo SiC processu.
Key Features
● Temperature stabilitas usque ad 2500°C cum resistentia optimae inpulsae scelerisque.
● Ultra alta puritas et valida adhaesio graphite ad minimam particulam generationis.
Superior resistentia vaporibus H₂, NH₃, SiH₄ et Si in asperis ambitus processu.
● Conformal coating coverage cum magnitudine capacitatis usque ad 750mm diameter, singulariter in Sinis.
Product Specification
Parameter VeTek Semiconductor Tantalum Carbide Coating:
| Corporalis proprietatibus TaC coating |
| Density |
14.3 g/cm³ |
| duritia |
2000 HK |
| Scelerisque expansion |
6.3×10⁻⁶/K |
| Resistentia |
1×10⁻⁵ Ohm·cm |
| Scelerisque status |
<2500°C |
| Crassitudo coating |
≥20μm (typicum 35±10μm) |
carbide (TaC) efficiens sectionem transversalem microscopicam;
TaC coating EDX data
TaC efficiens crystal structuram data：
| Elementum |
Cento atomicus |
|
|
Pt. 1 |
Pt. 2 |
Pt. 3 |
Mediocris |
| C K |
52.10
|
57.41
|
52.37
|
53.96
|
| Ta M |
47.90
|
42.59
|
47.63
|
46.04
|
Applications
Ad diversas necessitates processus semiconductoris obviam, VeTek iaculis Tantalum Carbide Coing products offert. Sequens tabella eas per majores areas applicans, typicas compositiones et processus applicabiles enumerat;
| Applicationem Field |
Typical Products |
Applicationem Description |
| SiC Epitaxy |
CVD TaC obductis susceptor planetarum,TaC iactaret laganum susceptor,TaC iactaret dux anulum
|
Apta processibus epitaxialibus SiC summus temperatus (exempli causa exempli, LPE), altam stabilitatem scelerisque praebens et ignobilem contagionem interfaciem ad cinematographicam uniformitatem curandam. |
| Epitaxy (MOCVD) DUCTUS. |
Imber caput, satelles orbis, anulus masking, scutum calor, iniectio COLLUM |
Apta systemata Aixtron MOCVD, repugnant H₂/NH₃ corrosioni, minuens particulam contagium et epitaxialem ductus emendans cedit. |
| SiC Crystal Incrementum (PVT Ratio) |
TaC linivit raro graphite,TaC iactaret halfmoon,dux anulus,cover,chuck
|
Usus in incremento PVT SiC regulae, usque ad 2500°C resistit, motus graphites impedit et puritatem crystallinam efficit. |
| Summus Temperature Heating & Supporting Components |
calefactio inductiva susceptoris;resistentia calefactio elementum, laganum carrier
|
Apta inductioni vel systemati calefactionis resistenti, altum duritiem et scelerisque concussionem resistentiae praebens, componentium vitae spatium per 3-5 tempora extendens. |
Ad solutiones matching processus accuratiores, placere ad thePii Carbide Epitaxypagina applicationis affinis.
Lorem servitia sustinemus amet elit. Transierunt ISO9001 cum bona potestate.
Grata nobis contactum ad ulteriorem consultationem vel nuntium relinquatis
