Sic coated satellite operimentum in Mocvd

Sicut ducens Sic iactaret Mocvd satellite operimentum manufacturer in Sina, Veteksemcon est committitur providing princeps perficientur epitaxial processus solutions ad semiconductor industria. Nostrum Mocvd Sic iactaret opercula sunt diligenter disposito et typice in satellite susceptator system (sss) ad auxilium et operculum et amplio epitaxize qualis.

Key materiae et structurae

● Subiecti: Sic tunicas operimentum solet ex excelsum puritatis graphite vel Ceramic subiecta, ut Isostatic Graphite bonum mechanica vires et lucem pondus.

●  Superficiem coating: A summus puritas Silicon Carbide (sic) materia iactaret per eget vapor depositione (cvd) processus ad augendae resistentia ad altum temperaturis, corrosio et particula contaminationem.

●  Forma: Typice orbis informibus vel speciali structural consilia ad accommodare diversis exempla mucvd apparatu (E.G., Veeco, Aixtron).

Usus et key roles in Mocvd processus:

Et sic coated satellite operimentum ad Mocvd est maxime in Mocvd epitaxial incrementum reactionem thalamum et suum munera includit:

(I) Protegens Wafers et Optimizing temperatus distribution

Ut a key calor scutum component in Mocvd apparatu, quod operit perimeter de lagana ad redigendum non-uniformiter calefactio et amplio in uniformitatem augmentum temperatus.

Characteres: Silicon carbide coating habet bonum summus temperatus stabilitatem et scelerisque conductivity (300w.m.m^-1-K^-1), Quod adjuvat amplio epitaxial layer crassitudine et doping uniformitatem.

(II) ne particula contagione et amplio epitaxial layer qualis

Et densa et corrosio-repugnans superficies sicco coating prohibet source vapores (E.G. TMGA, TMAL, NH₃) a reagens cum subiecto in Mocvd processus et reducit particula contagione.

Characteres: Et humilis adsorption characteres reducere depositionem reliqua, amplio cede de Gan, sic epitaxial laganum.

(III) High-temperatus resistentia, corrosio resistentia, exiguis ministerium vitae apparatu

High Temperature (> M ° C) et mordax vapores (E.G. NH₃, H₂) sunt in Mocvd processus. SIC coatings efficaciora resistente eget exesa et reducendo apparatu sustentacionem costs.

Characteres: Ob suam humilis coefficientem de scelerisque expansion (4.5 × X^-6K^-1), Sic maintains dimensional stabilitatem et vitat distortione in scelerisque cycling ambitus.

CVD coating Film Crystal structuram:

Basic physica proprietatibus CVD sic coating

Veteksemicon s SIC coated satellite operimentum in Mocvd products Shop: