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Mucvd Epitaxial susceptator in IV
  • Mucvd Epitaxial susceptator in IV Mucvd Epitaxial susceptator in IV
  • Mucvd Epitaxial susceptator in IV Mucvd Epitaxial susceptator in IV

Mucvd Epitaxial susceptator in IV "laganum

Mucvd Epitaxial susceptator in IV "Wafer est disposito ad crescere IV" epitaxial layer.Vetek semiconductor est professional manufacturer et elit, qui dedicatur ad providing summus qualitas Mucvd epitaxial, qui dedicated ad IV "wafer Mucvd processus. Nos poterit eripere peritus et efficient solutions ad clients.you sunt grata communicate nobiscum.
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depictio producti

Vetek semiconductor est professionalem dux Sina Mucvd Epitaxial susceptator in IV "Wafer Manufacturer cum High Quality et rationabile pretium. Welcome to Contact Us.The Mucvd Epitaxial in Metal-Organic Chemical Vapor Depositionem est (Mocvd) Processus, quod est late propter incrementum summus qualitas epitaxial tenues films, comprehendo Gallium Nitride (Gan), Aluminium Nitride (Aln) et Silicon Carbide (sic). Et susceptator militat ut suggestus habere subiectum in epitaxial incrementum processus et ludit a crucial munus in ensuring uniformis temperatus distribution, efficientem æstus translatio, et optimal incrementum conditionibus.

Mucvd Epitaxial susceptator in IV "laganum est typically factum ex summus puritate graphite, Silicon carbide, aut aliis materiae cum optimum scelerisque conductivity, eget inertness et resistentia ad scelerisque inpulsa.


Applicationes:

Mucvd Epitaxial Susceptatores Find Applications in variis industrias, comprehendo:

Power Electronics, incrementum de Gan-fundatur summus electron-mobilitatem transistors (Hems) ad summus potentia et summus frequency applications.

Optoelectronics, incrementum de Gan-fundatur lux-emittens Diodes (LEDs) et laser Diodes ad efficientem lucendi et ostentationem technologies.

Sensors: incrementum Aln-fundatur Piezoelectric sensoriis pro pressura, temperatus et acousticus unda deprehensio.

Electronics summus temperatus: incrementum potentiae Sic-substructio machinae ad applicationes summus temperatura et summus potentiae.


Product parametri MOCVD Susceptoris Epitaxialis pro 4" Wafer

Physica proprietatibus Isostatic Graphite
Res Unitas Typical valorem
Mole density g/cm³ 1.83
duritia HSD 58
Resistivity electrica μΩ.m 10
Flexurae Fortitudo MPA 47
Compressive fortitudo MPA 103
distrahentes Fortitudo MPA 31
Young 's modulo Gpa 11.8
Scelerisque Expansion (CTE) 10-6K-1 4.6
Scelerisque conductivity W·m-1· K-1 130
Mediocris Frumenti Location μm 8-10
Poratus % 10
Cinis contentus ppm ≤10 (purgatus)

Nota: Priusquam tunicam, primam purificationem, post vestitionem, secundam purificationem faciemus.


Basicae physicae proprietates CVD SiC coating
Res Typical valorem
Crystal structure FCC β Phase polycrystallina, maxime (111) ordinatur
Densitas 3,21 G / CM³
duritia MMD Vickers duritiem 500g onus
Frumea magnitudine 2~10μm
Chemical castitas 99,99995%
Calor Capacity DCXL J · k-1· K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Young 's modulo 430 Gpa 4pt bend, 1300℃
Scelerisque conductivity 300W · M-1· K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1


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For inquiries about Silicon Carbide Coating, Tantalum Carbide Coating, Special Graphite or price list, please leave your email to us and we will be in touch within 24 hours.
NAME WuYi TianYao Nova Materia Tech.Co.,Ltd.
ADD Wangda Road, Ziyang Street, Wuyi Comitatus, Jinhua urbs, Zhejiang Provincia, China
TEL +86-579-87223657
FAX +86-579-87223657
Sera +86-15988690905
Tina +86-1869220752
E-mail anny@veteksemi.com
WEB www.veteksemicon.com
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