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GaN Epitaxy susceptor
  • GaN Epitaxy susceptorGaN Epitaxy susceptor
  • GaN Epitaxy susceptorGaN Epitaxy susceptor

GaN Epitaxy susceptor

Vetek Semiconductor est Seres turma, quod est a mundo, genus manufacturer et elit de Gan epitaxy susceptator. Nos have been opus in semiconductor industria ut Silicon carbide coatings et Gan epitaxy susceptos diu. Non possum providere vobis cum optimum products et propria prices. Vetek Semiconductor vultus deinceps ad becoming vestri diu-term socium.

Gan epitaxy est provectus semiconductor vestibulum technology ad producendum summus perficientur electronic et optoelectronic cogitationes. Secundum diversas subiectum materiae,Gan epitaxial waferspotest dividitur in Gan-fundatur Gan, sic-fundatur Gan, sapphirus, secundum Gan etGan-in-Si.


MOCVD process to generate GaN epitaxy

       Simplified Schematic de Mucvd processum ad generare Gan epitaxy


In productione gan epitaxy, subiectum non potest esse simpliciter poni somewhere pro epitaxial depositione, quia involvat variis factoribus ut Gas fluunt directionem, temperatus, pressura, fixation et contaminantium. Ideo autem basis est opus, et postea subiectum ponitur in disco, et deinde epitaxial depositionem fit in subiecto usura CVD technology. Hoc basis est gan epitaxy susceptos.

GaN Epitaxy Susceptor


De cancellos mismatch inter sic et Gan est parva quod scelerisque conductivity of sic multo altior quam de Gan si et sapphiro. Ideo pro subiecto gan epitaxial lagae, gan epitaxy susceptator cum sic coating potest significantly amplio scelerisque characteristics de fabrica et reducere in adiunctate temperatus in fabrica.


Lattice mismatch and thermal mismatch relationships

Cancellos mismatch et scelerisque mismatch relationes materiae


Et Gan epitaxy susceptator fabrica by Vetek Semiconductor habet sequentes characteres:


Materia: Quod susceptator factus est summus puritate graphite et sic coating, quod dat ut sustinere altum temperaturis et providebit optimum stabilitatem in epitaxial fabricandis, 99,9999% et immunditia potest consequi minus quam 5ppm.

Scelerisque conductivity: Bonum scelerisque perficientur enables precise temperatus imperium, et bonum scelerisque conductivity de Gan epitaxy susceptator ensures uniformis depositione Gan epitaxy.

Chemical stabilitatem: et sic coating prohibet contaminationem et corrosio, ita et Gan epitaxy susceptos potest resistere dura eget elit in Mocvd system et ensure normalis productio de Gan epitaxy.

Consilio: Structural consilio est exsequi secundum mos necessitatibus, ut dolium informibus vel pancake informibus susceptos. Structures diversis optimized diversis epitaxial incrementum technologiae ut magis lagana cede et iacuit uniformitatem.


Quicquid vestri needr, Vetec Semiconductor potest providere vobis cum optime products et solutions. Prospiciebat consultatio aliquando.


Basic corporis proprietatibusCVD sic coating:

Basic physica proprietatibus CVD sic coating
Res
Typical valorem
Crystal structure
FCC β PHASE Polycrystalline, maxime (CXI) Oriented
Densitas
3,21 G / CM³
Durities
MMD Vickers Duritia (500g Load)
Frumenti size
II ~ 10mm
Chemical castitas
99,99995%
Calor
DCXL J · k-1· K-1
Sublimation Temperatus
MMDCC ℃
Flacalis fortitudinem
CDXV MPA Rt IV-Point
Young 's modulus
CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity
300W · M-1· K-1
Thermal Expansion (CTE)
4.5 × X-6K-1


Tabernus semiconductorGan epitaxy susceptator shops:

gan epitaxy susceptor shops

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