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Wangda Road, Ziyang Street, Wuyi Comitatus, Jinhua urbem, Zhejiang provincia, Sina
SGL, Toyo Tokai Carbon, Mersen et alia Graphite brands sunt nunc relative optimum graphite artifices, et studio quaesivit post fabrica in semiconductor, photovoltaic et aliis agris. Unde necesse est scire eorum core products.
● R8500 series: Usus est in photovoltaics, semiconductors et caliditas processui.
● R7300 series: Puritas, maxime idoneam ad semiconductor applications.
● R6500 series: Optimum perficientur apta variis caliditas, princeps onus et altum praecisione applications. Maxime in semiconductor vestibulum, photovoltaic industria, metallurgy et alias caliditas agros.
Technical parametri:
|
R8510 |
R6510 |
R7300 |
R8500 |
R8710 |
Mediocris grano magnitudine μm |
10 | 10 | 20 | 10 | 3 |
G (CM³ |
1.77 | 1.83 | 1.73 | 1.77 | 1.8 |
Porosity Vol.% |
14 | 10 | 14 | 14 | 10 |
Medium PORE ostium diameter μm |
1.8 | 1.8 | 1.6 | 1.8 | 0.6 |
Coefficientem permeability (ambientium temperatus) CM2 / s |
0.25 | 0.06 | 0.1 | 0.25 | 0.01 |
Rockwell HR₅ / ₁₀₀ |
70 | 85 | 75 | 70 | 105 |
Resistentia μωm |
14 | 12 | 16 | 14 | 13 |
Flexural fortitudinem MPA |
50 | 60 | 40 | 50 | 85 |
Compressive fortitudinem MPA |
110 | 130 | 85 | 110 | 170 |
Dynamic modulum de elasticitate MPA |
10.5 x 10³ |
11,5 x 10³ |
X X 10³ |
10.5 x 10³ |
10.5 x 10³ |
Scelerisque expansion (XX - CC ° C) K⁻⁻ |
4.2 x |
4.2 x | 2.7 x | 4.2 x | 4.7 x |
Scelerisque conductivity (XX ° F) WM⁻⁻k⁻⁻ |
95 | 110 | 70 | 95 | 105 |
Cinis contentus PPM |
200 | / | 200 | 200 | 200 |
● IG Series: Isostatic Graphite, late in semiconductor, photovoltaic, metallurgy, eget industria et alium caliditas et altum praecisione agros
● Nomen series: High euismod Isostatic Graphite, late in EDM, FORMORE vestibulum, semiconductor et photovoltaic agri
● ISO seriem: High euismod Isostatic Graphite, maxime ad Industrial Applications requiring excelsum puritatem, princeps vires et summus temperatus resistentia
● TTK Series: Quia EDM, MOLLIGNING FORMULA et alia alta praecisione processus agri
● Series HPG: Apta apparatu et components sub altum praecisione et dura conditionibus, praesertim in electronics, semiconductor, photovoltaic et alia industries
Technical parametri:
Gradus |
IG, XI |
IG, LXX |
I nomen-I |
VIII nomen-VIII |
ISO-LXIII |
TTK-LV |
HPG-XXX |
HPG, LIX |
|
Mole density |
Mg / m3 |
1.77 | 1.83 | 1.68 | 1.78 | 1.78 | 1.8 | 1.8 | 1.91 |
Durities |
HSD |
51 | 58 | 45 | 63 | 76 | 73 | 74 | 88 |
Electrica resistentibus |
ΜΩ · M |
11 | 10 | 13.5 | 13.4 | 15 | 15.3 | 15.3 | 13.5 |
Flacalis fortitudinem |
MPA |
39 | 47 | 36 | 52 | 65 | 63 | 65 | 100 |
Compressive fortitudinem |
MPA |
78 | 103 | 69 | 106 | 135 | 139 | 142 | 210 |
Tensile viribus |
MPA |
25 | 31 | 20 | 34 | 46 | 48 | 50 | 74 |
Young 's modulus |
Gpa |
9.8 | 11.8 | 8.8 | 10.1 | 12 | 11.2 | 11.3 | 12.7 |
Coefficientem scelerisque expansion |
10-6/ K |
4.5 | 4.6 | 4.2 | 5.6 | 5.6 | 5.6 | 5.6 | 5.7 |
Scelerisque conductivity |
W / (m k) |
120 | 130 | 90 | 90 | 70 | 86 | 86 | 95 |
● HK1: Aspera machining de magna fingunt moritur et mori, mittentes applications.
● HK2: Roughing ex et consummatione ex media ad parva accurate, acri definitio fingunt et torcular Tools.
● HK3: HK-III est premier gradu de ultra-denique graphite, optimum usus est in quo ultra-altum definitionem et optimum extremum gerunt resistentia sunt critica i.e. altum qualis fingunt faciens, aerospace industries et denique detailed formae. Bonum MRR rate / gerunt Ratio.
● HK, LXXV: HK-LXXV est ultra-denique gradu de graphite et adhibetur hic princeps superficiem finiatur et bonum ore lapsum condiciones sunt discrimine. Etiam facile machining proprietates altum definitionem in angulis et profiles. Est optimum usus est in excelsum qualis finis ad fusum vestibulum processus.
Technical parametri:
Gradus |
HK-I |
HK-II |
HK-III |
HK, LXXV |
|
Specifica gravitas |
G / cm3 |
1.85 |
1.82 | 1.84 | 1.82 |
Specifica resistentia |
ΜΩ · M |
11 | 13.5 | 15.5 | 16.5 |
Flacalis fortitudinem | MPA | 50 | 64 | 88 | 66 |
Durities |
Litus |
58 | 64 | 78 | 72 |
Mediocris frumenti magnitudine |
μm |
11 | 7 | 2 | 4 |
● Isostatic Graphite: Apta CVD components et cruces in semiconductor et photovoltaic industries. Tum vestibulum components pro Monocrystalline et Polycrystalline Silicon, praesertim in summus temperatus environments.
● Ellor + Series: High conductivity, gerunt, repugnans, princeps officii efficientiam, idoneam ad altum consummare superficiem processus, praecisione fingunt dispensando.
Technical parametri:
Gradus |
|
Isostatic Graphite MCMXL |
Isostatic Graphite MMCDX |
Ellor + XVIII |
Ellor + L |
MediocrisFrumea magnitudine |
μm |
/ | / | 12 | 5 |
Densitas |
G / cm3 |
1.79 | 1.74 | 1.78 | 1.86 |
Durities |
Litus |
63 | 55 | 62 | 80 |
FloreolusFortitudo |
MPA |
43 | 30 | 45 | 76 |
ElectricaResistentia |
μohm.cm |
1397 | 1600 | 1370 | 1370 |
+86-579-87223657
Wangda Road, Ziyang Street, Wuyi Comitatus, Jinhua urbem, Zhejiang provincia, Sina
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