Silicon carbide imber caput

Vetek semiconductor Silicon carbide imber caput est maxime factum ex Sic. In semiconductor processus, pelagus munus de Silicon carbide imber caput est ad aequaliter distribute in reactionem Gas ut formationem uniformis amet inChemical vapor depositione (CVD)velPhysica vapor depositione (PVD)processibus. Ob optimis proprietatibus sic ut excelsum scelerisque conductivity et eget stabilitatem, sic im imber caput potest operari efficiently ad altum temperaturis, reducere in impareness in Gas fluxus inDepositione processusEt ita amplio qualis est amet iacuit.

Silicon carbide imber caput potest aequaliter distribute in reactionem Gas per plures nozzles cum eodem apertura, ut uniformis Gas fluxus, ne locorum concentrationes, quae sunt alta vel humilis, ita amplio qualis est altus vel humilis et ita amplio qualitas. Combined cum optimum summus temperatus resistentia et eget stabilitatemCvd sic, Non particulas et contaminantium non dimisit inFilm depositione processus, Quod est discrimine ad maintaining puritatem film depositione.

Core perficientur vulvam

Key Indicatores Technical Specifications test signa

Base materiam 6N gradu eget vapor depositione Silicon carbide semi F47-0703

Thermal conductivity (XXV ℃) CCCXXX W / (M K · K) ± V% ASTM E1461

Operating temperatus dolor -196 ℃ ~ MDCL ℃ exolvuntur stabilitas Mil-Std, DCCCLXXXIII modum

Apertura Machining accuracy ± 0.005mm (Laser Microole machining technology) ISO 286-2

Superficiem asperitas RA ≤0.05μm (Speculum gradu curatio) Jis B (DCX; MMXIII

Triplex processus innovation utilitatem

Nanoscale Airflow Imperium

MLXXX foraminis vulvam Design, adoptat asymmetric favum compages ad consequi 95,7% Gas distribution uniformitatem (metiri notitia)

Technology Aperture CLIVUS: 0.35mm exterius Orbis → 0.2mm Center Progressive Layout, eliminating Edge Effectus

Nulla contamination deposit praesidium

Ultra-mundum superficiem curatio:

Ion trabem etching removet subsurface laedi layer

Layer Depositione (Ald) Alo₃₃ tutela amet (libitum)

Thermal Mechanica stabilitatem

Thermal deformatio coefficient: ≤0.8μm / m · ℃ (LXXIII% inferior quam traditional materiae)

Transierunt MMM scelerisque inpulsa probat (rt↔1450 ℃ exolvuntur)

Sem data estCvd sic amet crystal structure：

Basic physica proprietatibus CVD Sic coating：

Vetek Semiconductor Silicon Carbide imber caput tabernas: