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Quid mensurae apparatu sunt in FAB fabricae? - Vetek Semiconductor

Sunt multa genera mensurae apparatu in FAB fabricae. Et haec quaedam communis apparatu:


Photolithogsography Processus mensurae apparatu


photolithography process measurement equipment


• Photolithography apparatus alignment accuracy mensurae apparatu: Ut ASML scriptor alignment mensurae ratio, quae potest accurate superpositione diversis layer exemplaria.


• Photoresist crassitudine mensurae instrumentum: Inter Ellipsometers, etc., quod calculate crassitudine photoresist secundum Polarization characteres lucis.


• Adit et Aei deprehensio apparatu: Development Development Development effectum et forma et forma cum photolithography, ut pertinet deprehensio apparatu de VIP optoelectronics.


Etching processus mensurae apparatu


Etching process measurement equipment


• Etching profundum mensurae apparatu: Sicut albus lumen interferometer, quod potest accurate metimur modica mutationes in sublevatum profundum.


• Etching profile mensurae instrumentum: Using electron trabem et optical imaging technology ut metiretur profile notitia ut latus murus angulus exemplaris postquam etching.


• CD-Sem: Potest accurate metimur magnitudinem microstructures ut transistantibus.


Tenues film depositione processus mensurae apparatu


Thin film deposition process


• film crassitudine mensurae instrumenta: Optica reflectometers, X-Ray reflectometers, etc, potest metiri in crassitudine variis films deposita super superficiem lagae.


• film accentus mensuræ apparatu: Per mensuræ accentus generatae a film in laganum superficiem, qualis est film et ejus potential impulsum in laganum perficientur iudicentur.


Doping processus mensuræ apparatu


Semiconductor Device Manufacturing Process


• Ion implantatio dose mensuræ apparatu: Donam ad Ion implantatio dose a vigilantia parametri ut trabem intensionem in Ion implantatio vel faciendo electrica probat in laganum post implantationem.


• Doping concentration et distribution mensuræ apparatu: Exempli gratia, secundarium Ion Missam spectrometers (sims) et expandentes resistentia probat (SRP) potest metimur concentration et distribution doping elementa in laganum.


CMP processus mensuræ apparatu


Chemical Mechanical Planarization Semiconductor Processing


• Post-Polising Planness mensuræ Equipment: Usus optical profilesque et alia apparatu ad metimur in planitiis a laganum superficiem postquam politionem.

• Polising remotionem mensuræ apparatu: Determinare moles materia remota per politicos per mensuram profundum vel crassitudine mutatio de marcam in laganum superficiem ante et post politentur.



Wafer particula deprehensio apparatu


wafer particle detection equipment


• KLA sp 1/2/3/5/7 et alia apparatuPotest efficaciter deprehendere particula contagione in laganum superficiem.


• TURBEN series: Tornado series Equipment of VIP optoelectronics potest deprehendere defectus ut particulas in laganum, generat defectionem maps et feedback related processus ad temperatio.


• Alfa-X intelligentes visual inspectionem apparatu: Per CCD-AI imago Imperium ratio, uti obsessio et visual sensu technology distinguere laga imagines et deprehendere defectus ut particulas in laganum superficiem.



Alia mensuræ apparatu


• optical microscopium: Solebant observare microstructure et defectus in laganum superficiem.


• Scanning Electron Microscope (Sem): Potest providere altius resolutio imagines ad servatis microscopic morphologia de laganum superficiem.


• Force microscope (AFM)Potest metimur notitia ut asperitas laganum superficiem.


• ellipsometer: Praeter mensuræ crassitiem photoresist, potest etiam esse ad mensuram parametri ut crassitudo et refractivam index tenui films.


• Quattuor -prudent Tester: Ad metiretur electrica perficientur parametri ut resistentia ad laganum.


• X-ray diffractometer (xrd)Potest analyze crystal structuram et accentus statu laganum materia.


• X-ray photoelectron spectrometer (xps): Used ad analyze elementalis compositionem et eget statu laganum superficiem.


X-ray photoelectron spectrometer (XPS)


• focused ion trabem microscopium (fib)Potest praestare Micro-Nano Processing et Analysis in Wafers.


• Macro Adi Equipment: Tales ut circulus apparatus, propter Macronis deprehendatur exemplar defectus post Lithography.


• Mask defectus deprehensio apparatu: Detect defectus super larva ut accurate de litholam exemplar.


• Transmissus Electron Microscope (tem): Non custodire microstructure et defectus intra lagam.


• Wireless temperatus measurement laganum sensoremApta idoneam ad varietate processus apparatu, mensuræ temperatus accurate et uniformitatem.


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