Applicationem et investigationis de Silicon Carbide Ceramics in agro photovoltaics - Vetek Semiconductor

Cum augendae inopia traditional industria fontes ut oleum et carbo, novum industria industrias, ducitur a solis photovoltaics, quia developed cursim in annis. Cum 1990s, mundi photovoltaic installed facultatem habet auctus LX temporibus. In global photovoltaic industria deprehenderit adversus backdrop de industria structuram transformationem, et industria scale et installed facultatem incrementum rate saepe profectus novum records. In MMXXII, in global photovoltaic installed facultatem ad pervenire 239gw, ratio pro 2/3 omnium novum renovabile industria facultatem. Est aestimari quod in MMXXIII, in global photovoltaic installed facultatem erit 411gw, in anno-on-annus incremento de LIX%. Quamvis continua incrementum photovoltaics, photovoltaics tamen tantum rationem 4.5% de global potentia generatione et fortis incrementum momentum et permanere usque post MMXXIV.

Silicon Carbide CeramicsHave bonum mechanica vires, scelerisque stabilitatem, summus temperatus resistentia, oxidatio resistentia, scelerisque inpulsa resistentia et eget corrosio resistentia, et late in calidum agros ut metallurgy, machinatione, novum industria et aedificationem materiae et chemicals. In photovoltaic agro, quod maxime in diffusio de TopCon cellulis, LPCVD (humilis pressura eget vapor depositione)Pecvd (Plasma Chemical Vapor Depositione)et alia scelerisque processum links. Compared with traditional quartz materials, boat supports, boats, and pipe fittings made of silicon carbide ceramic materials have higher strength, better thermal stability, no deformation at high temperatures, and a lifespan of more than 5 times that of quartz materials, which can significantly reduce the cost of use and the loss of energy caused by maintenance and downtime, and have obvious cost advantages.

Ⅰ Silicon Carbide Ceramics in photovoltaic agri

The main products of silicon carbide ceramics in the photovoltaic cell field include silicon carbide boat supports, silicon carbide boats, silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide rods, silicon carbide protective tubes, etc. Among them, silicon carbide boat supports and silicon carbide boats replace the original quartz boat supports and boats. Ob eorum obvious commoda et celeri progressionem, qui facti sunt bona choice pro key carrier materiae in productio processus of photovoltaic cellulis et in foro demanda est magis attrahens operam a industria.

Reactionem Bonded Silicon Carbide (RBSC) Ceramics sunt maxime late usus Silicon Carbide Ceramics in agro photovoltaic cellulis. Siquidem humilis siphinging temperatus humilis productio sumptus et alta materia densatio. In particulari, non est fere nulla volubilis DECREMENTUM per reactionem peccare processus. Praecipue idoneam ad praeparationem magnae amplitudo et complexum informibus structural partes. Therefore, it is most suitable for the production of large-sized and complex products such as boat supports, small boats, cantilever paddles, furnace tubes, etc. The basic principle of the preparation of RBSC ceramics is: under the action of capillary force, reactive liquid silicon penetrates into the carbon-containing porous ceramic blank, reacts with the carbon source in the blank to generate secondary phase β-sic, et simul, secundarium tempus β-sic est in situ combined cum α-sic particulas in blank pulveris, et reliquum poris permanere repleti Ceramic materiae, et tandem densificans RBSC Ceramic Materials est. In variis proprietatibus RBSC Ceramic products domi et foris ostenditur in mensa I.

Tabula I Comparison of perficientur de reactionem Sinseded SIC Ceramic products in major terris

In vestibulum processus solaris photovoltaic cellulis Silicon lana posita in navi et navicula ponitur in navi possessor diffusio LPCVD et aliis scelerisque processibus. Et Silicon carbide cantilever paxillum (rod) est a key loading component ad movere navem possessor portantes Silicon lana in et de calefacit fornacem. Ut ostensum est in Figura I, in Silicon carbide cantilever paxillum (virga) potest ensure concentus de Silicon laga et in camino tubo, ita faciens diffusionem et passivation plus uniformis. In eodem tempore, quod est pollutio, liberum et non-deformis ad altum temperaturis, habet bonum scelerisque inpulsa resistentia et magnam onus capacity, et late in agro photovoltaic cellulis.

Figura I schematic diagram key altilium loading components

In traditionalQuartz naviEt cymba possessor, in mollis portum diffusio processus, in Silicon lagan et quartz navi possessor postulo ut in the Victz fistulam in diffusu fornace. In singulis diffusione processum, quartz navi possessor repleti Silicon lana ponitur in Silicon carbide REMUS. Post Silicon Carbide REMUS intrat in Vicus Tube, in REMUS automatice demergit ad induendum Vicus navicula cymba et Silicon lagoni et tardius decurrit ad originem. Postquam quisque processus, in quartz navi possessor indiget removeri a Silicon carbide REMUS. Tales crebris operatio erit causa quartz navi firmamentum ad induendum ex in longum tempus. Cum autem quartz naviculam firmamentum rimas et erumpit, tota quartz naviculam firmamentum et cadunt off Silicon carbide REMUS, et tunc laedas in quartz partibus, Silicon et Silicon in carbide Paddles infra. Silicon carbide paddles sunt pretiosa et non reparari. Cum accidente occurs, faciam ingens proprietas damna.

In LPCVD processus, non solum erit super-praedicta scelerisque accentus problems fieri, sed cum lpcvd processus requirit Silanene Gas est per Silicon Waufer, in Long-terminus et in navi. Ob ad inconstantia de scelerisque expansion coefficientes de iactaret Silicon et quartz, in navi firmamentum et navem et resiliunt et vita spatio erit graviter reducitur. De vita spatio of Ordinarius quartz naviculam et naviculam subsidiis in lpcvd processus plerumque solum II ad III mensibus. Ideo est maxime momenti ad amplio naviculam firmamentum materia ad augendam fortitudinem et ministerium vitae vitae naviculam firmamentum vitare huiusmodi accidentia.

Ⅱ Development Flecte de Silicon Carbide Ceramic materiae in photovoltaic agri

Ex 133 Shanghai photovoltaic Pre se ferre SNEC MMXXIII, multi photovoltaic societates in regione coepit ut utor Silicon carbide navem subsidiis, ut ostensum est in Figura II, ut Longi Green Energy Technology Co., ut Longi Technology, Ltd. et alii photovoltaic societates. Silicon carbide boat supports used for boron expansion, due to the high use temperature of boron expansion, usually at 1000 ~ 1050℃, the impurities in the boat support are easy to volatilize at high temperature to pollute the battery cell, thereby affecting the conversion efficiency of the battery cell, so there are higher requirements for the purity of the boat support material.

Figura II LPCVD Silicon Carbide cymba Support et Boron Expansion Silicon Carbide cymba Support

In praesens, in navem firmamentum propter boron expansion necessitates ad purificari. Primo, in rudis material silicon carbide pulveris est acidum-lavit et purificatus. Puritas Lithium-gradu Silicon carbide pulveris rudis materiae requiritur ad esse super 99,5%. Post acidum baptismata et purificationem cum sulphuric acidum + hydrofluoric acidum, puritas raw materiae potest pervenire super 99,9%. Eodem tempore impudicities introduced in praeparatione navem firmamentum regendum est. Ideo et boron expansionem navicula possessor est maxime formatae per grouting ad redigendum usum metallum impudicitiis. In Grouting modum solet formatae per secundarium peccare. Post re-morticinem, puritatem Silicon Carbide cymbam Holder est melius ad quaedam quatenus.

In addition, in sincering processus in navi possessor, in siniing fornacem esse purificatum in antecessum, et graphite calor agri in fornacem etiam indiget purificari. Plerumque, puritas Silicon Carbide cymba Holder propter boron expansion est de 3n.

Et Silicon carbide cymba est promissum futurum. Et Silicon carbide naviculam ostensum est in Figura III. Circumcatio LPCVD processum aut boron expansion processus, vita de Vicus naviculam est relative humilis, et scelerisque expansion coefficientem in materia est contra est quod de Silicon carbide materia. Ergo facile ad processum matching cum Silicon carbide navicula caliditas, quae ducit commoti vel solveret navem.

Silicon carbide cymbam adoptat integrated CUMATIUM et altiore processus processus iter. Forma et positus tolerantia elit sunt alta et cooperatur magis cum Silicon carbide navi possessor. In addition, Silicon carbide habet princeps vires, et naviculam fractio den a humano collisione est multo minus quam quod de quartz navi. Tamen, debitum ad excelsum puritatem et processui praecisione requisitis Silicon carbide naves, sunt tamen in parva batch verificationem scaena.

Cum Silicon carbide naviculam in directum contactum cum altilium cellulam, oportet habere altum puritatem etiam in LPCVD processus ne contagione Silicon laga.

Maximus difficultas de Silicon carbide naves iacet in machining. Sicut nos omnes, Silicon Carbide Ceramics sunt typical dura et fragilis materiae, quae sunt difficile ad processum, et figura et positus tolerantia in navicula sunt valde stricte. Difficile est Domicilii Silicon Carbide navigia cum traditional processus technology. In praesenti, quod Silicon carbide navicula plerumque processionaliter per iaspidem instrumentum molere, et deinde polita, CONDITANEUS et aliis treatments sunt.

Figura III Silicon Carbide cymba

Cum Vicus fornacem tubulis, Silicon carbide fornacem tubulis habere bonum scelerisque conductivity, uniformis calefacere, et bonum scelerisque stabilitatem, et lifespan est plus quam V temporibus, quod de Vicus, et eorum Vespan est plus quam V temporibus fistulae. Fuga fistula est pelagus æstus translatio pars in fornacem, quod ludit a munus in signationem et uniformis calor translatio. Vestibulum difficultas Silicon carbide fornacem tubulis valde altum et cedat rate etiam humilis. Primo, ex ingens magnitudinem fornacis tubo et muro crassitudine plerumque inter V et VIII mm, quod est valde securus ad deformant, collapse vel etiam vox per processus of blank formatam.

Per morticandi, debitum ad ingens amplitudo fornacis tubo, quod etiam difficile est ut non deformare in morticing processus. Et Silicon Content est uniformitas pauper et non facile est locus non-silicicInizization, ruina, fregisset, etc., et productionem exolvuntur ex Clible fornacem in tubis, et ad productionem cycle una in fornacem fistulam excedit L diebus. Igitur Silicon carbide fornacem tubulis sunt tamen in investigationis et progressionem rei publicae et nondum fuisse massa-produci.

Et principalis sumptus de Silicon Carbide Ceramic materiae in photovoltaic agro venit ex summus puritas Silicon Carbide pulveris rudis materiae, summus puritas Polycrystalline Silicon, et reactionem peccare costs.

Cum continua progressionem de Silicon carbide pulveris purificationem technology, in puritate Silicon carbide pulveris continues ad augendam per magneticam separationem, pickling et aliis technologiae, et impudicitia content paulatim ab I% ad 0.1%. In continua incremento in Silicon carbide pulveris productio capacitatem, sumptus summus puritas Silicon Carbide pulveris est etiam decrescis.

Cum secunda dimidium MMXX, Polysilicon societates successive nuntiatum expansiones. Currently, illic es plures quam XVII domesticis polysilicon productionem societates et annua output est aestimari ad excedunt 1.45 decies centena talent in MMXXIII. Et overcapacity Polysilicon habet reduci ad sumptus de Silicon Carbide Ceramics.

In terms of reactionem peccare, in magnitudine et reactionem peccating fornacem etiam augendae, et loading facultatem unius fornacis etiam augendae. In latest magna-amplitudo reactionem morticinem fornacem potest load plus quam XL pieces ad tempus, quod multo maior quam existentium reactionem peccando fornacis loading facultatem IV ad VI pieces. Ideo et stillabunt etiam stillabunt signanter cost.

De toto, Silicon carbide Ceramic materiae in photovoltaic agri sunt maxime developing ad altiorem puritatem, fortius portans facultatem, altior loading facultatem, et minus sumptus.

Ⅲ De significatione Silicon Carbide Ceramic materiae in photovoltaic agri

In praesenti, in summus puritas Quartz Arena requiratur ad quartz materiae in domesticis photovoltaic agro est etiam maxime dependens importat, dum quantitas et cubits of altus-puritate Quartz Strictly Extremi ab externis regionibus usque ad Serter Serter Strictly Extremi ab externis regionibus ad SCINTER SCARIA exportatum ab Externorum regionibus ad SCINTER SCARIA exportatum ab Externorum regionibus ad SCINTER SCARIA exportatum ab Externorum regionibus ad SCINTER QUIRMUS. Et stricta copia summus puritas quartz harenae materiae non est alleviated et restringitur progressionem photovoltaic industria. In eodem tempore, ex humilitate vitae et quartz materiae et facile damnum ducens ad downtime, progressionem de altilium technology est gravissime restricted. Unde est de magnis significatione pro patria ad tollendum aliena technicae blockades per faciendi investigationis in gradual replacement of Materials cum Silicon carbide Ceramic materiae.

In comprehensive collatio, utrum sit uber perficientur vel uti cost, applicationem de Silicon carbide tellus materiae in agro solaris cellulis est magis utile quam quartz materiae. Et applicationem de Silicon carbide tellus materiae in photovoltaic industria habet magnum auxilium ad photovoltaic turmas ad redigendum in investment sumptus auxilia materiae et amplio uber qualis et aemulationes. In futuro, cum magna-scale applicationem magnam magnitudineSilicon Carbide caminus tubulis, high-purity silicon carbide boats and boat supports and the continuous reduction of costs, the application of silicon carbide ceramic materials in the field of photovoltaic cells will become a key factor in improving the efficiency of light energy conversion and reducing industry costs in the field of photovoltaic power generation, and will have an important impact on the development of photovoltaic new energy.