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Silicon Carbide Ceramics (SIC)Est provectus Ceramic materia continentur Silicon et ipsum. Ut mane MDCCCXCIII, arte synthesized sic pulveris coepit esse massa produci ut abrasive. Paratus Silicon Carbide grana potest deforme admodum durumCeramicsQuod estCeramics sic.
SIC Ceramics structuram
SIC Ceramics habere optimum est summus duritiem, princeps viribus et compressive resistentia, altum temperatus stabilitatem, bonum scelerisque conductivity, corrosio resistentia, et humilis coefficiens. SIC Ceramics sunt currently late in agros automobiles, environmental tutela, aerospace, electronic notitia, industria, etc., et facti per irreparabile momenti pars aut core in multis industriae agri.
In praesenti praeparatio processus Silicon carbide LATERAMEN est dividitur inreactionem mortificandi, Puerce, calidum premeris mortisetrecrystallization morticing. Reactionem peccare habet maximae foro et humilis productio sumptus; Puercitabiles morte habet princeps pretium sed optimum perficientur; Calidum premeris morticine habet optimum perficientur sed princeps sumptus, et maxime usus est in summus praecisione agris ut aerospace et semiconductors; Recrystallization Renault Vel Poruus Materias cum pauperes perficientur. Ideo sic Ceramics in semiconductor industria saepe paratus per calidum pressed mortis.
Et relativum commoda et incommoda calidum pressed sic Ceramics (HPSC) comparari ad alia septem genera SIC:
Pelagus fora et perficientur de sic a diversis productio modi
Praeparatio SIC Ceramics per calidum pressed mortis:
•Rudis materia praeparatio: High-puritatem Silicon Carbide pulveris est electus ut rudis materia, et quod pre-tractata per pila milling, protegendo et alia processibus ut particula mole distribution est uniformis.
•COMMENTO: Design idoneam fingunt secundum magnitudinem et figura Silicon carbide Ceramic parari.
•Fingunt loading et pressedEt pre-tractata Silicon carbide pulveris oneratur in fingunt, et pressed sub altum temperatus et princeps pressura conditionibus.
•Refrigerandi et refrigerationemPostquam instabat perficitur Fingunt et Silicon carbide blank ponuntur in summus temperies fornacem pro peccato. Per siquiding processus, in silicon carbide pulveris paulatim subeundum eget reactionem ad formare densa tellus corpus. Post peccare, quod uber est refrigeratum ad locus temperatus per quod oportet refrigerationem modum.
Rationis Diagram calidum pressed silicon carbide induction fornacem:
• (I) hydrau torcular onus vector;
• (II) hydrau torcular ferro Piston;
• (III) calor submersa;
• (IV) High density graphite onus transfer Piston;
• (V) summus density graphite calidum premed mori;
• (VI) graphite onus-ferre caminus,
• (VII) airtight aqua refrigered fornacem operimentum;
• (VIII) aquam, refrigeratum aeris inductionem coil pipe embedded in airtong fornacem murum;
• (IX) compressa graphite fiberboard SALUTATIO layer;
• (X) airtight aqua frigida fornacem;
• (XI) hydrau torcular frame onus-afferentem inferioribus trabem showing vis reactionem vector;
• (XII) HPSC Ceramic Corpus
Calidum pressed sic Ceramics sunt:
•Alte puRity:0,98% (unum crystallum sic C% pura).
•Plene densa: C% density est facile effectum (unum crystallum sic C% densa).
•PolycryMALITIA.
•Ultrafine frumenti calidum pressed sic Ceramics microstructure facile Achieves C% density. Hoc facit calidum pressed sic LATERAMEN superior omnibus aliis formis de SIC, inter unum crystallum sic et directed SIC SIC.
Igitur sic Ceramics superior proprietates excedunt aliam Ceramic materiae.
In semiconductor industria, sic Ceramics late usi sunt, ut Silicon Carbide molere Discs pro molerewafers, Tafer Tractable finem EffectorNam transportandae lagana et partes in reactionem cubiculum calor curatio apparatu, etc.
SIC Ceramics sunt ludens ingens partes in tota semiconductor industria, et cum continua upgrading of semiconductor technology, non erit magis in situ.
Nunc, triste ad peccatum temperatus de Sic Ceramics et invenire novum et cheap productio processibus sunt tamen in investigationis focus de materia operarios. Simul, exploring et developing omnes commoda de SIC Ceramics et benefacientes hominis est primaria opus of Veteec Semiconductor. Ceramics non credimus, ut sic latum progressionem et application spes.
Physica proprietatibus Vetsemicon Silicon Silicon Carbide:
Res
Typical valorem
Chemical compositionem
Sic> XCV% et
Mole density
> 3.07 G / CM³
Apparent Porosity
<0.1%
Modulus de ruptis ad XX ℃
Mpa CCLXX
Modulus of rupture ad MCC ℃
CCXC MPa
Durness ad XX ℃
MMCD kg / mm²
Fractura lenta ad XX%
3.3 mpa · m1/2
MCC ℃ scelerisque conductivity
XLV w / m.k
20-1200 ℃ scelerisque expansion
4.51 × X-6/ ℃
Max working temperatus
MCD ℃
MCC ℃ scelerisque inpulsa resistentia
Bonum
Vetek Semiconductor est professional Chinese Manufacturer et elit Puritas Sic Wafer cymbalum Portitorem, Puritas Sic cantilever paxillum, Sic cantilever paxillum, Silicon Carbide Wafer Cymba, Mucvd sic coating susceptoset Alii Semiconductor Ceramics. Vetisk Semiconductor est committitur providing provectus solutions ad variis coating products pro semiconductor industria.
Si vos have ullus inquiries et opus additional Details:Placere non dubitant ad adepto in tactus nobiscum.
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