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Sic cantilever paxillum
  • Sic cantilever paxillumSic cantilever paxillum

Sic cantilever paxillum

Vetek Semiconductor est Sic cantilever paxillum est usus in calor curatio furnaces ad tractantem et supporting lagam naves. Et summus temperatus stabilitatem et excelsum scelerisque conductivity of sic materia ut princeps efficientiam et reliability in semiconductor processus processus. Nos committitur ad providing summus qualis products ad competitive prices et expectamus ad decet diu-term socium in Sinis.

Vos autem suscipias venire ad officinas Vestek semiconductor emere ad tardus venditionis, humilis pretium et summus qualitas sic cantilever padle. Expectamus cooperantem vobiscum.


Vetek Semiconductor est Sic cantilever paxillum Features:

Alta Temperature Stabilitas: Potens suam formam et structuram ponere in calidis temperaturis, idonea ad caliditatem processus processus.

Corrosio resistentiae: Praeclara corrosio resistentia variis chemicis et vaporibus.

Maximum fortitudinem et rigiditatem, providet reliable subsidium ne deformatio et damnum.


Commoda Vetisk Semiconductor est Sic cantilever REMEDIUM:

Praecisiones: Princeps processus accurate stabilis operationem in apparatu automated efficit.

Minimum contaminationem: summus puritas sic materia reducit periculum contaminationem, quod est maxime momenti pro ultra-mundus vestibulum elit.

Mechanica proprietatibus excelsum: potest sustinere dura operantes environments cum altum temperaturis et excelsum pressura.

Imprimis applicationes SiC Cantilever Paddle eiusque applicationis principium

Silicon laga Handling in semiconductor vestibulum:

SiC Cantilever REMUS maxime usus est lagana siliconis tractandi et sustinendi in fabricandis semiconductoribus. Solet in his processibus purgatio, etching, efficiens et calor curatio. Principium applicationis:

Silicon laga Handling: sic cantilever paxillum est disposito ut tuto fibulis et moventur Silicon wafers. Per altum temperatus et eget curatio processibus, in altum duritiem et vires sic materia ut silicium laga non laedi vel deforme.

Chemical vapor depositione (CVD) processus:

In processu CVD, SiC Cantilever REMUS adhibetur lagana siliconis gestandi ut membrana tenuis in superficiebus suis deponi possit. Principium applicationis:

In CVD processus, in sic cantilever paxdle adhibetur ad figere Silicon laga in reactionem ad thalamum et gaseous precursor decomposes ad altum temperies et forms a tenuis film in superficies in Silicon laga. In eget corrosio resistentia de sic materia ensures firmum operationem sub altum temperatus et eget elit.


Product parametri SiC Cantilever Paddle

Physica proprietatibus Renault Vel Silicon Carbide
Res Typical valorem
Opus temperatus (°C) 1600°C (cum oxygenio) 1700°C (reducing environment)
Sic contentus > 99.96%
Free Si Content < 0.1%
mole densitatis 2.60-2.70 g / cm3
Apparent Porosity
Compressionem vires > DC MPA
Frigus inflexio virium 80-90 MPa (20°C)
Calidum inflexio virium 90-100 MPa (1400°C)
Scelerisque expansion @ MD°C 4.70x10-6/ Auster
Conductor @ MCC ° C XXIII w / m • k
Elastica modulus 240 GPa
Scelerisque inpulsa resistentia perquam bonum


Tabernae productio:

VeTek Semiconductor Production Shop


Overview de Semiconductor chip epitaxy Industry catenae:

Overview of the semiconductor chip epitaxy industry chain


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