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Sic Processus Tube
  • Sic Processus TubeSic Processus Tube

Sic Processus Tube

VeTek Semiconductor summus perficientur praebet SiC Processus Tubuli semiconductor fabricandi. Nostri processus Tubuli SiC in oxidatione, diffusione processuum praestant. Cum qualitate et artificio superiore, hae fistulae summus temperaturae stabilitatem et conductionem scelerisque pro processus semiconductoris efficientis offerunt. Certatim Morbi cursus sapien offerimus et quaerite ut particeps sit vestri longi temporis in Sinis.

Et semiconductoretiam Sinarum primarius estCvd sicetTACManufacturer, supplementum et exporter. Adhaerens ad studium perfectam qualis est products, ut nostra sic processum tubulis satisfactum multis customers.Extremum consilium, qualitas materiae rudis, magni effectus et pretium competitiveQuid omne mos vult, et quod etiam quod possumus offerre tibi. Scilicet, etiam per se perfectum post-venditionesque ministerium. Si vos es interested in parce partes ad Semiconductor officia, vos can consulere nobis nunc, ut respondeo vobis in tempore!


Et semiconductorSiC Processus Tubus versatile est componentia late adhibita in semiconductore, photovoltaico et microelectronic fabrica fabricandis suispraecipua attributa sicut stabilitas caliditas, resistentia chemica, et conductivity superior thermarum. Hae qualitates praelatam electionem reddunt pro processibus rigorosis summus temperatus, congruens caloris distributio et stabilis environment chemicae, quae signanter auget efficientiam et qualitatem productivam.


Vetek Semiconductor est Sic processum tubo est agnita pro eius eximia perficientur, communiterusus est in oxidatione, diffusione, annealingetchemicavapor al depositio(CVD) processibusin semiconductor vestibulum. Cum a focus in optimum artifices et uber qualis, nostrum sic processum Tube Guardes efficient et Discomptus Semiconductor processus, leveraging summus temperatus stabilitatem et scelerisque conductivity de sic materia. Committitur ad providing Top-Tier products ad competitive prices, ut affirment ut vestri confidebat, diu-term socium in Sinis.

Sola sumus in SIC Plant in Sina cum 99.96% puritas, quae potest esse directe ad laganum contactus et providereCVD Silicon Carbide coatingad redigendum immunditiam content toMinus quam 5PPM.


Product parametri de sic processum tubi:

Physica proprietatibus Renault Vel Silicon Carbide
Proterty Typical Value
Opus temperatus (° F) MDC ° C (cum oxygeni), MDCC ° C (reducing environment)
SiC content > 99.96%
Free Si Content <0.1%
Mole density 2.60 ~ 2.70 g / cm3
Apparens poros < 16%
Cogo vires > DC MPa
Frigus flectens vires LXXX ~ XC MPA (XX ° F)
Calidum inflexio virium XC ~ C MPa (MCD ° F)
Scelerisque expansion @ MD°C 4.70x10-6/ Auster
Conductor @ MCC ° C 23  W/m•K
Elastica modulus 240 GPa
Scelerisque inpulsa resistentia perquam bonum


Et semiconductorSic Processus TubeProductio tabernas:

SiC Process Tube Production shops


Overview of the semiconductor chip epitaxy industry catena:

semiconductor chip epitaxy industry chain


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