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Silicon Carbide Wafer cymba ad fornacem Horizontalem
  • Silicon Carbide Wafer cymba ad fornacem HorizontalemSilicon Carbide Wafer cymba ad fornacem Horizontalem
  • Silicon Carbide Wafer cymba ad fornacem HorizontalemSilicon Carbide Wafer cymba ad fornacem Horizontalem

Silicon Carbide Wafer cymba ad fornacem Horizontalem

Scapha SiC laganum altam postulationem in puritate materiali habet. Vetek Semiconductor suppleat puritatem SiC >99.96% recrystallized SiC huic producto.VeTek Semiconductor est fabrica professionalis et supplementum in Sinis pro carbide lagani pii in fornace horizontali, annis experientiae in R&D et productio, quale bene potest moderari et pretium auctori offerre. Certo certius potes emere naviculam lagani carbidam Pii ad fornacem horizontalem a nobis.

Navicula lagani carbidi Siliconis altae qualitatis pro fornace horizontali a Sinis fabricante VeTek semiconductor offertur. Emptum laganum Siliconis laganum pro fornace horizontali quae optimum est directe ab officina humili pretio.Silicon carbide laganum navigium pro fornace horizontali in tubulis fornacibus adhibetur ad onerandas et lagana transferendi in curationibus calidissimus. Ob egregias proprietates carbidi pii materiae ut resistentia caliditas, resistentia chemica corrosio, et stabilitas thermarum, late in variis processibus curationis caloris adhibentur ut diffusio, oxidatio, CVD et furnum.


Navicula lagana silicon carbide ad fornacem horizontalem e materia carbide pii facta et notas habet sequentes:

1. Alta duritia et resistentia: Pii carbide habet duritiem secundum solum adamantem, et facit eam valde repugnantem. Hoc concedit carbida Pii scapha ut crebris impactibus mechanicis et frictioni resistat, vitam suam extendens.

2. Resistentia caliditas calidissima: carbida Silicon punctum liquescens 2730°C habet, naves carbidas pii faciendas aptas ad culturas summus temperaturas et varios processus fabricationis semiconductores, ut oxidatio summus temperatura et diffusio.

3. Minimum scelerisque dilatatio coefficientis: carbida Silicon humilem coëfficientem expansionem scelerisque habet, quae firmitatem dimensionalem in calidis temperaturis conservare adiuvat, ne deformatio navigii et laganum curando accurate afficiens.

4. Bona stabilitas chemica: Silicon carbida maxime chemicis resistit et cum solutionibus acidis et alkaline communi non agit, salutem et munditiam laganae procurans.

Varias figuras fabricare possumus naviculam lagani siliconis carbidam qualia sunt navicula lagana horizontalis, navicula lagana verticalis, et quaevis alia navigia amet.


Utimur alta puritate recrystallized pii carbide cum infra parametris;

Corporalia proprietates Pii Carbide Recrystallized
Property Typical Value
Opus temperatus (°C) 1600°C (cum oxygenio) 1700°C (reducing environment)
SiC content > 99.96%
Free Si content < 0.1%
mole densitatis 2.60-2.70 g/cm3
Apparens poros < 16%
Cogo vires > DC MPa
Frigus inflexio virium 80-90 MPa (20°C)
Calidum inflexio virium 90-100 MPa (1400°C)
Scelerisque expansion @ MD°C 4.70x10-6/°C
Scelerisque conductivity @1200°C 23  W/m•K
Modulus elasticus 240 GPa
Scelerisque inpulsa resistentia perquam bonum


Applications

Silicon laganum carbidum navi ad fornaces horizontales latas applicationes inveniunt in industria semiconductoris et industriae photovoltaicae:

Laganum purgans et etching

Diffusio et oxidatio

Electroplating et engraving

Chemical Mechanica Polonica (CMP)

Calor curatio

Laganum translatio et repositio


VeTek Semiconductor Production Shop:

VeTek Semiconductor Production Shop


Hot Tags: Silicon Carbide laganum cymba pro fornace horizontali, Sina, Manufacturer, Supplier, Factory, Lorem, Eme, Provecta, Dura, facta in Sinis
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