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Puritas Sic cantilever paxillum
  • Puritas Sic cantilever paxillumPuritas Sic cantilever paxillum

Puritas Sic cantilever paxillum

Vetek semiconductor est ducens manufacturer et elit princeps puritatis sic cantilever paxillum productum in Sinis. High castitatem sic cantilever paddles sunt communiter in semiconductor diffusione Furnorum ut laganum transferre vel loading tabulas.
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Puritas Sic cantilever paxillum est a key component in semiconductor processus apparatu. Quod productum est factus ex summus puritas Silicon carbide (sic) materia.  Customers potest eligere SINTERED SIC materia vel recrypystaled sic materia. Cum auxilio eius optimum habet excelsum puritatis, excelsum scelerisque stabilitatem et corrosio resistentia, id est late in processus ut lagestris translationis, firmamentum et summus temperatus processus, providing sponsor et ad cursu processu et uber.


Puritas Sic cantilever paxillum Paddle ludit in sequentibus specifica partes in semiconductor processus processus:


ARGUMENTUM: Puritas Sic cantilever paxillum est solebat ut a wafer translatio fabrica in altus-temperatus diffusione vel oxidatio furnorum. Eius princeps duritia facit eam induendum repugnans et non facile ad deformant durante diu terminus usum, et can ut ad laganum manet accurate posita per translationem processus. Combined cum eius altum temperatus et corrosio resistentia, ut possit tuto transferre lagana in et de fornacis tubo in altum temperatus environments sine ullo contaminatione vel damnum ad lagana.


Wafer Support: Sic materia est humilis coefficientem scelerisque expansion, quod significat quod eius magnitudine mutationes minus, cum temperatus mutationes, quod adjuvat ponere precise imperium in processus. In eget vapor depositione (CVD) vel corporalis vapor depositione (PVD) processibus, sic cantilever paddle adhibetur ad firmum et fix et plana in depositione processus, ita improving et plana in depositione processus, ita improving et plana in depositione processus, ita improving et plana in depositione processus, ita improving et plana per depositionem in amet.


Applicationem summus temperatus processibus: Sic cantilever paxillum habet optimum scelerisque stabilitatem et potest sustinere temperaturis usque ad MDC ° c. Ideo hoc productum est late in altum temperatus annales, oxidatio, diffusio et aliis processibus.


Basic physica proprietatibus magni puritatis sic cantilever paxillum:

Physica proprietatibus Silicon Silicon Carbide

Res

Typical valorem

Chemical compositionem

Sic> XCV% , Et

Mole density

> III.VII G / CM³
Apparent Porosity
 <0.1%
Modulus de ruptis ad XX ℃
 Mpa CCLXX
Modulus of rupture ad MCC ℃
 CCXC MPa
Durness ad XX ℃
 MMCD kg / mm²
Fractura lenta ad XX%
 3.3 mpa · m1/2
MCC ℃ scelerisque conductivity
 XLV w / m.k
20-1200 ℃ scelerisque expansion
 4.5 × X-6/ ℃
Max working temperatus
 MCD ℃
MCC ℃ scelerisque inpulsa resistentia
 Bonum

Physica proprietatibus Renault Vel Silicon Carbide
Res
 Typical valorem
Opus temperatus (° F)
 MDC ° C (cum oxygeni), MDCC ° C (reducing environment)
Sic contentus
 > 99.96%
Free Si Content
 <0.1%
Mole density
 2.60-2.70 g / cm3
Apparent Porosity
Compressionem vires
 > DC MPA
Frigus flectens vires
 80-90 MPA (XX ° F)
CALLENUS
 90-100 MPA (MCD ° F)
Thermal expansion @ MD ° C
 X 4.70 X-6/ Auster
Conductor @ MCC ° C
 XXIII w / m • k
Elastica modulus
 CCXL GPA
Scelerisque inpulsa resistentia
 Maxime


Puritas Sic cantilever paxillumSCRUTUM:


VeTek Semiconductor Production Shop


Overview de semiconductor chip epitaxy industria catholica:


Overview of the semiconductor chip epitaxy industry chain

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