CMP Polishing Slurry

CMP Polishing Slurry (eget mechanica Polishing slurry) est summus perficientur materia usus est in semiconductor vestibulum et praecisione materia dispensando. Eius core munus est ad consequi denique flatness et poliendi de materia superficies sub synergistic effectus ex eget corrosio et mechanica molere ad occursum in occursum planities et superficiem qualitas ad Nano campester. Vultus deinceps ad tuum porro consultationem.

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depictio producti

Veteksemicon s CMP politibus slurry est maxime usus est ut a politibus abrasive in CMP chemical mechanica polising slurry pro Planarizing Semiconductor materiae. Hoc habet sequenti commoda:

● Diametrum particula consociationis particularum libere potest esse;
● Particulas particulas et particula distributio sit uniformis;
● Dispersio systema est firmum;
● Missam productio scale magna et differentia inter batches parva
● Non facile condense et.

Euismod Indicatores pro Ultra-High Puritas Series Products

Parameter	Unitas	Euismod Indicatores pro Ultra-High Puritas Series Products
Parameter	Unitas	Episcopus	Episcopus2	Episcopus3	Episcopus4	Episcopus-5	Episcopus6	Episcopus7
Mediocris Silica particula magnitudine	NM	XXXV ± V	XLV ± V	LXV ± V	LXXV ± V	LXXXV ± V	C ± V	CXX ± V
Nanoparticle Size Distribution (PDI)	1	<0.15	<0.15	<0.15	<0.15	<0.15	<0.15	<0.15
Solutio PH	1	7.2-7.4	7.2-7.4	7.2-7.4	7.2-7.4	7.2-7.4	7.2-7.4	7.2-7.4
Solidum contentus	%	20.5 ± 0.5	20.5 ± 0.5	20.5 ± 0.5	20.5 ± 0.5	20.5 ± 0.5	20.5 ± 0.5	20.5 ± 0.5
Species	-	Blue	Blue	Alba	Off-Alba	Off-Alba	Off-Alba	Off-Alba
Particula X Morphology	X: S- peritical; B- curvam; P- eros-informibus, T- bulbous; C- catena, sicut (aggregatum state)
Stabiliendo ions	Organic / Amines inorganicis
Rudis materia compositionem y	Et: M-TMOS; e-te; mihi, Tamos + Teos, em-Ezos + TMOS
Metal Metal Content	≤ 300ppb