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CMP poliendo Slurry
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CMP poliendo Slurry

CMP slurry expolitio (Chemica Mechanica, Slurry politura) summus effectus est materia in fabricandis semiconductoribus et in processu materiali praecisione adhibita. Core munus eius est consequi subtilitatem et expolitionem superficiei materialis sub synergistic effectu corrosionis chemicae et stridor mechanicae ut occurrat planicii et superficiei qualitatis requisitis in gradu Nano. Tuam porro consultationem exspecto.

Veteksemicon's CMP slurriam expolitio maxime adhibetur ut laesura expolitio in CMP chemica mechanica slurry expolitio ad materias semiconductores planariandas. Habet haec commoda;

Sponte aptabilis particula diametri et gradus aggregationis particulae;
Particulae sunt monodispersae et particulae magnitudo uniformis distributio;
Ratio dissipationis stabilis est;
Massa productionis magna est, et parva differentia est inter batches;
Non est facile condensare et componere.


Facis Indicatores pro Ultra-High Purity Series Products

Parameter
Unitasas
Facis Indicatores pro Ultra-High Purity Series Products

UPXY-1
UPXY-2
UPXY-3
UPXY-4
UPXY-5
UPXY-6
UPXY-7
Mediocris Silica particula Location
nm
35±5
45±5
65±5
75±5
85±5
100±5
120±5
Nanoparticle Size Distribution (PDI)
1 <0.15
<0.15
<0.15
<0.15
<0.15
<0.15
<0.15
Solutio pH
1 7.2-7.4
7.2-7.4
7.2-7.4
7.2-7.4
7.2-7.4
7.2-7.4
7.2-7.4
Firmus Content
% 20.5±0.5
20.5±0.5
20.5±0.5
20.5±0.5
20.5±0.5
20.5±0.5
20.5±0.5
Aspectus
--
Caeruleus
Blue
White
Off-White
Off-White
Off-White
Off-White
Particulum Morphologiae X
X:S- pherical;B- Curved;P- eros informibus-T- Bulbous;C- Catenae-sicut (congregato statu)
Stabiliens Iones
Organicum / Inorganicum Amines
Rudis Material Y
Y:M-TMOS;E-TEOS;ME-TMOS+TEOS;EM-TEOS+TMOS
Metal Impurity Content
≤ 300ppb


Perficientur Specifications pro High-purity Series Products

Parameter
Unitasas
Perficientur Specifications pro High-purity Series Products
WGXY-1Z WGXY-2Z
WGXY-3Z
WGXY-4Z
WGXY-5Z
WGXY-6Z
WGXY-7Z
Mediocris Silica particula Location
nm
35±5
45±5
65±5
75±5
85±5
100±5
120±5
Nanoparticle Size Distribution (PDI)
1 <0.15
<0.15
<0.15
<0.15
<0.15
<0.15
<0.15
Solutio pH
1 9.5±0.2
9.5±0.2
9.5±0.2
9.5±0.2
9.5±0.2
9.5±0.2
9.5±0.2
Firmus Content
% 30-40 30-40
30-40
30-40
30-40
30-40
30-40
Aspectus
--
Caeruleus
Blue
White
Off-White
Off-White
Off-White
Off-White
Particulum Morphologiae X
X:S- pherical;B- Curved;P- eros informibus-T- Bulbous;C- Catenae-sicut (congregato statu)
Stabiliens Iones
M: Organic amine, K: potassium hydroxide, N: Sodium hydroxide, vel alia components
Metal Impurity Content
Z: High-purity Series (H Series≤1ppm;L Series≤10ppm); Latin Series (M Series ≤300ppm)

CMP poliendo Slurry Product Applications


Integrated circuitu materiae ILD CMP

● Integrated circuit materias Poly-Si CMP

Semiconductor cristallinae laganum silicum unum materiae CMP

Semiconductor pii materiae carbidae CMP

Integrated circuitu materiae STI CMP

Integrated circuit metal and metal obice iacuit materias CMP


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