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Alta pudicitia navi laganum SiC ferebat
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  • Alta pudicitia navi laganum SiC ferebatAlta pudicitia navi laganum SiC ferebat
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Alta pudicitia navi laganum SiC ferebat

VeTek Semiconductor offert nativus Celsi puritatis SiC laganum navi ferebat. Carbide Pii summae puritatis facta, liniamenta foramina ad laganum in loco teneo, ne ea in processu illabatur. CVD SiC membrana praesto est etiam si opus est. Ut professionalis et fortis semiconductor fabricator et elit, VeTek semiconductor princeps puritatis SiC laganum navigium ferebat pretium competitive et qualis princeps. VeTek Semiconductor prospicit esse longum tempus socium in Sinis.
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Veteksemi excelsum puritatem sicca lacus navem carrier est magna afferentem component in annalibus fornaces, diffusa fornaces et alia apparatu in semiconductor vestibulum processus. Puritas Sic Wafer cymba carrier plerumque est de excelsum puritatis Silicon carbide materia et maxime includit in his partes:


• Phasellus elementum suscipit: Structuram similem bracket, proprie ad portandumPii laganaaut aliis semiconductor materiae.


• Support structuram: Support structuram consilio dat eam ferre gravibus onerat ad altum temperaturis et non deformant et damnum per altum temperatus curatio.


silicon carbide material

Silicon carbide materiales


Corporalia proprietatesSilicon Carbide recrystallized：


Res
 Typical valorem
Opus temperatus (° F)
 MDC ° C (cum oxygeni), MDCC ° C (reducing environment)
Sic contentus
 > 99.96%
Free Si content
 < 0.1%
mole densitatis
 2.60-2.70 g / cm3
Apparens poros
Compressionem vires
 > DC MPa
Frigus inflexio virium
 80-90 MPA (XX ° F)
CALLENUS
 90-100 MPA (MCD ° F)
Scelerisque expansion @ MD°C
 4.70 * X-6/ Auster
Scelerisque conductivity @1200°C
 XXIII w / m • k
Modulus elasticus
 CCXL GPA
Scelerisque inpulsa resistentia
 perquam bonum

Si processus productionis requisita sunt superiora;CVD sic coatingPotest fieri in excelsum puritatem sic laganas navem carrier ad puritatem pervenire plus quam 99,99995%, ulterius improvidus suum caliditas resistentia.


Basic physica proprietatibus CVD sic coating:


Res
 Typical valorem
Crystal structure
 FCC β tempus Polycrystalline, maxime (CXI) Oriented
Densitas
 3,21 G / CM³
Durities
 MMD Vickers duritiem 500g onus
Frumenti Size
 II ~ 10mm
Chemical castitas
 99,99995%
Calor Capacity
 DCXL J · k-1· K-1
Sublimatio Temperature
 MMDCC ℃
Flexurae Fortitudo
 CDXV MPA Rt IV-Point
Young 's modulo
 CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque Conductivity
 300W · M-1· K-1
Thermal Expansion (CTE)
 4.5 × X-6K-1

Per curatio caliditas princeps castitatis laganum SiC tabellarius navis laganum pii laganum aequabiliter calefieri facit ut locus aestuantis vitet. Praeterea caliditas resistentia carbidi pii materialis dat ut structuram stabilitatem in temperaturae MCC°C vel etiam superiori conservare sinat.working principle of High purity SiC wafer boat carrier


Per diffusionem vel furnum processum, paxillum cantilever et princeps puritatis SiC laganum navigium cooperantur ferebat. Thecantilever paxillumTardius purgat excelsum puritatem sic lagoere navem carrier portantes silicium laga in caminum cubiculum et designatur positus in dispensando. 


In excelsum puritatem sic laqueum navem carrier maintains contactum cum Silicon laga et certum in propria situ durante calor curatio processus, cum cantilever paddle iuvat servare totam structuram in dextera cum cursus temperatus aequaliter.


Princeps navigium puritatis laganum SiC ferebat et paxillum cantileverum cooperantur ut accurationem et stabilitatem calidi processus caliditatis curet.


Et semiconductorpraebet te nativus altissimae puritatis SiC laganum navigium secundum necessitates tuas. Exspecto tuam inquisitionem.


Et semiconductorHigh Puritas Sic Wafafa navi tabellarius tabernas:

VeTek Semiconductor High purity SiC wafer boat carrier shops

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