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GaN Epitaxial Graphite Susceptor for G5
  • GaN Epitaxial Graphite Susceptor for G5GaN Epitaxial Graphite Susceptor for G5
  • GaN Epitaxial Graphite Susceptor for G5GaN Epitaxial Graphite Susceptor for G5

GaN Epitaxial Graphite Susceptor for G5

Vetek Semiconductor est professional manufacturer et elit, dicata providente summus qualitas Gan epitaxial graphite susceptos ad G5. Nos statutum diu terminus et stabilis societates cum numerosis bene notum turmas domi et foris, promerendae fiducia et respectu nostri customers.

Vetek Semiconductor est professional Sinis Gan epitaxial graphite susceptator in G5 Manufacturer et elit. Et Gan Epitaxial Graphite Conceptó propter G5 est a critica component in Aixtron G5 metallum-organicum eget vapor depositione (Mocvd) ratio pro incrementum de summus qualitas Gallia Nitride (Gan) Tenues Temperatus Temperatus Distribution, efficientem æstus translatio, et minimal contaminationem durante incrementum processus.


Key features of Vetek Semiconductor Gan epitaxial Graphite susceptos enim G5:

- Maximum puritatem: susceptor factus est ex graphite summe puro cum CVD coatingit, extenuando contagionem membranae crescentis GaN.

- Excellent scelerisque conductivity: Graphitae princeps conductivitatis scelerisque (150-300 W/(m·K)) distributio temperaturae uniformis per susceptorem efficit, ducens ad incrementum cinematographicum congruenter GaN.

- Minimum scelerisque expansionem: susceptor humilis scelerisque expansionem coefficiens minimizes lacus scelerisque ac crepuit per summus caloris incrementum processus.

- Chemical inertness: Graphita chemica inertia est et cum praecursoribus GaN non gerit, immunditia non inutiles in adultis pelliculis impediens.

- Compatibilitas cum Aixtron G5: Susceptus in Aixtron G5 MOCVD systematis usus specialiter destinatur, idoneos et functiones proprias procurans.


Applicationes:

High-splendor Leds: Gan-fundatur LEDs offerre princeps efficientiam et longa lifespan, faciens ea specimen generalis lucentis, automotive lucendi et ostentationem applications.

Summus potestas transistores: GaN transistores praestantiorem observantiam offerunt secundum densitatem, efficientiam et celeritatem mutandi, eosque ad potentiam applicationum electronicarum idoneas reddendo.

Diodes Laser: Laser diodes GaN-fundatus efficientiam altam et breves aequalitates offerunt, easque aptas facit ad applicationes opticas et communicationes sociales.


Productum parametri de Gan epitaxial Graphite susceptos ad G5

Physica proprietatibus Isostatic Graphite
Res Unitas Typical valorem
Mole density G / CM³ 1.83
duritia HSD 58
Resistivity electrica μω.m 10
Flacalis fortitudinem MPA 47
Compressive fortitudo MPA 103
Tensile vires MPA 31
Modulus Gpa 11.8
Thermal Expansion (CTE) 10-6K-1 4.6
Scelerisque Conductivity W · M-1· K-1 130
Mediocris Frumenti Location μm 8-10
Poratus % 10
Cinis contentus ppm ≤10 (purgatus)

Nota: Priusquam tunicam, primam purificationem, post vestitionem, secundam purificationem faciemus.


Basicae physicae proprietates CVD SiC coating
Res Typical valorem
Crystal structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3,21 G / CM³
duritia MMD Vickers duritiem 500g onus
Frumenti Size II ~ 10mm
Puritas chemica 99.99995%
Calor DCXL J · k-1· K-1
Sublimatio Temperature MMDCC ℃
Flacalis fortitudinem 415 MPa RT 4-punctum
Young 's modulo CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque Conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


VeTek Semiconductor Production Shop:

VeTek Semiconductor Production Shop


Hot Tags: GaN Epitaxial Graphite Susceptor for G5
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