Web Menu

Product Search

Lingua

Products
GaN Epitaxial Graphite Susceptor for G5
  • GaN Epitaxial Graphite Susceptor for G5GaN Epitaxial Graphite Susceptor for G5
  • GaN Epitaxial Graphite Susceptor for G5GaN Epitaxial Graphite Susceptor for G5

GaN Epitaxial Graphite Susceptor for G5

Vetek Semiconductor est professional manufacturer et elit, dicata providente summus qualitas Gan epitaxial graphite susceptos ad G5. Nos statutum diu terminus et stabilis societates cum numerosis bene notum turmas domi et foris, promerendae fiducia et respectu nostri customers.
Mitte Inquisitionem
depictio producti

Vetek Semiconductor est professional Sinis Gan epitaxial graphite susceptator in G5 Manufacturer et elit. Et Gan Epitaxial Graphite Conceptó propter G5 est a critica component in Aixtron G5 metallum-organicum eget vapor depositione (Mocvd) ratio pro incrementum de summus qualitas Gallia Nitride (Gan) Tenues Temperatus Temperatus Distribution, efficientem æstus translatio, et minimal contaminationem durante incrementum processus.


Key features of Vetek Semiconductor Gan epitaxial Graphite susceptos enim G5:

- Maximum puritatem: susceptor factus est ex graphite summe puro cum CVD coatingit, extenuando contagionem membranae crescentis GaN.

- Excellent scelerisque conductivity: Graphitae princeps conductivitatis scelerisque (150-300 W/(m·K)) distributio temperaturae uniformis per susceptorem efficit, ducens ad incrementum cinematographicum congruenter GaN.

- Minimum scelerisque expansionem: susceptor humilis scelerisque expansionem coefficiens minimizes lacus scelerisque ac crepuit per summus caloris incrementum processus.

- Chemical inertness: Graphita chemica inertia est et cum praecursoribus GaN non gerit, immunditia non inutiles in adultis pelliculis impediens.

- Compatibilitas cum Aixtron G5: Susceptus in Aixtron G5 MOCVD systematis usus specialiter destinatur, idoneos et functiones proprias procurans.


Applicationes:

High-splendor Leds: Gan-fundatur LEDs offerre princeps efficientiam et longa lifespan, faciens ea specimen generalis lucentis, automotive lucendi et ostentationem applications.

Summus potestas transistores: GaN transistores praestantiorem observantiam offerunt secundum densitatem, efficientiam et celeritatem mutandi, eosque ad potentiam applicationum electronicarum idoneas reddendo.

Diodes Laser: Laser diodes GaN-fundatus efficientiam altam et breves aequalitates offerunt, easque aptas facit ad applicationes opticas et communicationes sociales.


Productum parametri de Gan epitaxial Graphite susceptos ad G5

Physica proprietatibus Isostatic Graphite
Res Unitas Typical valorem
Mole density G / CM³ 1.83
duritia HSD 58
Resistivity electrica μω.m 10
Flacalis fortitudinem MPA 47
Compressive fortitudo MPA 103
Tensile vires MPA 31
Modulus Gpa 11.8
Thermal Expansion (CTE) 10-6K-1 4.6
Scelerisque Conductivity W · M-1· K-1 130
Mediocris Frumenti Location μm 8-10
Poratus % 10
Cinis contentus ppm ≤10 (purgatus)

Nota: Priusquam tunicam, primam purificationem, post vestitionem, secundam purificationem faciemus.


Basicae physicae proprietates CVD SiC coating
Res Typical valorem
Crystal structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3,21 G / CM³
duritia MMD Vickers duritiem 500g onus
Frumenti Size II ~ 10mm
Puritas chemica 99.99995%
Calor DCXL J · k-1· K-1
Sublimatio Temperature MMDCC ℃
Flacalis fortitudinem 415 MPa RT 4-punctum
Young 's modulo CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque Conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


VeTek Semiconductor Production Shop：

VeTek Semiconductor Production Shop


Hot Tags: GaN Epitaxial Graphite Susceptor for G5
Related Categoria
Mitte Inquisitionem
Contactus info
Percontationes de Silicon Carbide Coating, Tantalum Carbide Coating, Graphite speciale vel indicem pretiosum, electronicam tuam nobis relinque et intra 24 horas erimus.
Related Products
VIII Inch Halfmoon Pars LPE Reactor
VIII Inch Halfmoon Pars LPE Reactor View More >>
Silicon carbide epitaxy laga carrier
Silicon carbide epitaxy laga carrier View More >>
Superius Halfmoon parte sic iactaret
Superius Halfmoon parte sic iactaret View More >>
Ultra pura graphite inferioribus helfmoon
Ultra pura graphite inferioribus helfmoon View More >>
Aixtron G5 Mucvd susceptores
Aixtron G5 Mucvd susceptores View More >>
Wafer vitae ACUS
Wafer vitae ACUS View More >>
News Commendationes
Quid est differentia inter CVD Tac et SINTER TAC?
Quid est differentia inter CVD Tac et SINTER TAC?View More >>
Quid est Tantalum carbide (Tac) coating superior ad Silicon carbide (sic) coating in sic una crystallus incrementum? - Vetek Semiconductor
Quid est Tantalum carbide (Tac) coating superior ad Silicon carbide (sic) coating in sic una crystallus incrementum? - Vetek SemiconductorView More >>
Intelligentes Cutting Technology ad Cubic Silicon Carbide Wafers
Intelligentes Cutting Technology ad Cubic Silicon Carbide WafersView More >>
In progressionem historia de 3C sic
In progressionem historia de 3C sicView More >>
Quam eligere Mocvd Graphite Tray?
Quam eligere Mocvd Graphite Tray?View More >>
Quantum tu scis de CVD sic? - Vetek Semiconductor
Quantum tu scis de CVD sic? - Vetek SemiconductorView More >>
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept