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Silicon carbide epitaxy laga carrier
  • Silicon carbide epitaxy laga carrierSilicon carbide epitaxy laga carrier
  • Silicon carbide epitaxy laga carrierSilicon carbide epitaxy laga carrier

Silicon carbide epitaxy laga carrier

Vetek semiconductor est a ducens customized silicon carbide epitaxy laga carrier elit in china.we sunt specialized in provectus materia magis quam XX years.We offer a SIC CARBIDE, crescente Sicci in layer in sic substratum, crescente sic reactor. Hoc Silicon carbide epitaxy laga carrier est momenti Sic iactaret pars halfmoon pars, altum temperatus resistentia, oxidatio resistentia, gerunt resistentia. We receperint te visitare nostra officinas in china.welcome ad consulere aliquando.

Sicut professional fabrica, ut velim providere vobis princeps qualis silicon carbide epitaxy laga carrier. Vetek semiconductor Silicon carbide epitaxy lagam carriers sunt specie disposito in sic epitaxial cubiculum. Sunt amplis applications et compatible cum variis apparatu exempla monstrabit.

Applicationem sem;

ProprioK semiconductor Silicon carbide epitaxy lagas carriers sunt praesertim in incrementum processus of sic epitaxial layers. Haec accessiones sunt positus intra sic epitaxy reactor, ubi venient in directum contactus cum Sic subiecta. In discrimine parametri ad epitaxial stratis crassitudo et doping concentration uniformitatem. Ideo nos assess ad perficientur et compatibility nostra accessiones per servatis notitia ut film crassitiem, carrier concentration, uniformitatem et superficiem asperitas.

Usus:

Fretus in apparatu et processus, nostra products potest consequi saltem (V), de epitaxial layer crassitudine in VI-inch dimidium luna configuratione. Hoc valore servit ut referat, ac ipsa results potest variari.

Compatible apparatu exempla;

Vetek semiconductor Silicon carbide iactaret graphite partes sunt compatitur cum variis apparatu exempla, comprehendo LPP, Naura, JSG, CETC, NASO Tech, et aliis.


Basic corporis proprietatibusCVD sic coating:

Basic physica proprietatibus CVD sic coating
Res Typical valorem
Crystal structure FCC β tempus Polycrystalline, maxime (CXI) Oriented
CVD sic coating density 3,21 G / CM³
Sic coatinghirness MMD Vickers Duritia (500g Load)
Frumea magnitudine II ~ 10mm
Chemical castitas 99,99995%
Calor DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flacalis fortitudinem CDXV MPA Rt IV-Point
Young 's modulo CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


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Overview of the semiconductor chip epitaxy industry chain

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