Aixtron G5 Mucvd susceptores

Sicut professional fabrica, Veteec Semiconductor vellem providere vos Aixtron G5 Mucvd susceptores sicut Aixtron epitaxy,  Sic iactaretGraphite partes et Tac iactaretGraphite partes. Gratam inquisitionis nobis.

Aixtron G5 est depositionem ratio pro compositis semiconductors. Avi G5 Mucvd utitur productio Customer Proven Axettron planetarium Reactor Platform cum plene automated cartridge (C2C) Wafer translatione system. Effectum industria maxima una cavum mole (VIII x VI pollices) et maximae productio facultatem. Hoc offert flexibile VI - et IV-inch configurations disposito ad minimize productio costs dum maintaining optimum uber qualitas. Et calidum Wall planetarium CVD ratio est propria per incrementum multiple laminas in unum fornacem et output efficientiam est princeps. 

Vetek Semiconductor offert completum paro of Accessories ad Aixtron G5 Mucvd susceptator system, Quod ex his consistit,

I. Planetarium Reactor Module

Function Orientation: ut core reactor moduli AIX G5 series, quod adoptat planetarium technology ad consequi excelsum uniformis materia depositione in wafers.

Technical Features:

Axisymmetric uniformitatem: De unique planetarium gyrationis design ensures ultra-uniformis distribution of laganum superficiebus in terms crassitudine, materiam compositionem et doping concentration.

Multi-Wafer Compatibility: Sustinet Batch Processing of V 200mm (VIII-inch) Wafers et VIII 150mm wafers, significantly augendae productivity.

Temperature Control Optimization: cum customizable subiectum loculos, et laganum temperatus est pressius imperium ad redigendum flexuram de laga propter scelerisque gradibus.

II. TECTUM (temperatus imperium laquearia ratio)

Function Orientation: ut summo temperatus imperium component de reactionem cubiculum, ut stabilitatem et industria efficientiam summus temperatus depositionem elit.

Technical Features:

Minimum calor Rubra Design: "calidum laquearia" technology reduces calorem fluxus in verticali directionem lagae, reduces periculum lagae deformatio, et sustinuit, in-Silicon-Based Gallium Nitride (Ganem-in-Based Gallium, et sustinet, in-in-basi) processus.

In situ Purgato Support: Integrated Cl₂ in situ Purgato munus reduces ad sustentationem tempore in reactionem thalamum et amplio continua operatio efficientiam ad apparatu.

III. Graphite components

Function positus: ut summus temperatus signantes et afferentem component, ut aer emendationes et corrosio resistentia reactionem cubiculum.

Technical Features:

High Temperature Resistance: Usus Altus Puritas flexibilia Graphite materia, Support -200 ℃ ad DCCCL ℃ extremam temperatus environment, idoneam ad Mocvd Promerces ammoniaci (NH₃), organicum metalla et aliis mordendo media.

Self-lubricatae et mollitiam, in Graphite anulum habet optimum auto-lubrication characteres, quae potest reducere mechanica gerunt, cum altum mollitiam coefficientem adaptat ad mutationem de scelerisque expansion, ensuring diu-terminus, Reliability.

Design customized: Support XLV ° Oblique incisum, V-informibus et clausa structuram ad occursum diversis cavum sigillum requisita.

Quartum, supporting systems et expansion capabilities

Automated Wafer Processing: Integrated Paperback-to-Paperback Wafer Handl quia plene automated laganum loading / unloading cum reducitur manual interventu.

Processus Compatibility: Support Epitaxial incrementum Gallium Nitride (Gan), phosphoro Arsenide (ASP), Micro DUXERIT et alia materiae, apta radio frequency (RF), Power Radio Frequency et alia agros.

Upgrade flexibilitate: existentium G5 systems potest upgraded ad G5 + version cum hardware modificationes ad accommodare maiora et provectus processibus.

Cvd sic amet crystal structure:

Basic physica proprietatibus CVD sic coating: