Products
Sic iactaret Mocvd susceptator
  • Sic iactaret Mocvd susceptatorSic iactaret Mocvd susceptator
  • Sic iactaret Mocvd susceptatorSic iactaret Mocvd susceptator

Sic iactaret Mocvd susceptator

Veteksemicon s SIC iactaret Mocvd susceptator est a fabrica cum optimum processus, diuturnitatem et reliability. Non potest sustinere altum temperatus et eget ambitum, ponere firmum perficientur et longa vita, ita reducendo frequency de replacement et sustentacionem et improving productio efficientiam. Nostrum Mocvd Epitaxial susceptator est clarus pro eius princeps density, optimum planities et optimum scelerisque imperium, faciens illud malle apparatu in dura vestibulum elit. Vultus deinceps ad cooperantem cum you.welcome consulere aliquo tempore.

VEKEKEMICION scriptorMucvd Epitaxial susceptoresDisposito sustinere altum temperatus environments dura eget condiciones commune in laganum productio processus. Per praecisione ipsum, haec components sunt tailored ad occursum ad restrictius requisitis epitaxial reactor systems. 


Nostrum Mocvd Epitaxial susceptatores fiunt altus species graphite subiecta iactaret iacuitSilicon Carbide (SIC), Quod non solum habet optimum summus temperatus et corrosio resistentia, sed etiam ensures uniformis calidum distribution, quod est discrimine ad maintaining consistent epitaxial film depositione.


In addition, noster siconductor susceptos habere optimum scelerisque perficientur, quae concedit ad ieiunium et uniformis temperatus imperium ad optimize ad semiconductor augmentum processus. Non possunt sustinere impetum summo temperatus, oxidatio, et corrosio, cursus fideles operatio usque in maxime provocatione operating environments.


Insuper et Silicon carbide coating Mucvd Susceptores sunt disposito cum focus in uniformitatem, quod est critica ad consequi summus qualitas unum crystallum subiecta. Et factum est ad consequi optimum unum glacies est ad augmentum ad augmentum super superficiem cristallum.


At Veteksemicon, nostra passion pro valde industria signa est momenti ut nostra commitment ut cost-efficaciam pro nobis sociis. Nos contendunt providere products ut Mucvd epitaxial susceptator in occursum semper-mutantur necessitatibus de semiconductor vestibulum et anticipare eius progressionem trends ut vestri operatio instructa cum maxime provectus tools. Expectamus ad aedificationem diu-term societate vobiscum et providente te qualis solutions.


Product parameter ad Sic iactaret Mocvd susceptator

Basic physica proprietatibus CVD sic coating
Res Typical valorem
Crystal structure FCC β tempus Polycrystalline, maxime (CXI) Oriented
Densitas 3,21 G / CM³
Durities MMD Vickers Duritia (500g Load)
Frumea magnitudine II ~ 10mm
Chemical castitas 99,99995%
Calor DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flexural Strength CDXV MPA Rt IV-Point
Young 's modulo CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


CVD SIC FILM CRYSTAL STRUCTURE

SEM data de CVD sic amet Crystalli structuram

Veteksemicon SIC iactaret Mocvd susceptos Tabernam

SiC Coated MOCVD Susceptor Production Shop

Overview de semiconductor chip epitaxy industria catholica:

semiconductor chip epitaxy industry chain


Hot Tags: Sic iactaret Mocvd susceptator
Mitte Inquisitionem
Contactus info
Percontationes de Silicon Carbide Coating, Tantalum Carbide Coating, Graphite speciale vel indicem pretiosum, electronicam tuam nobis relinque et intra 24 horas erimus.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept