Pallicon Pallicon Carbide (SIC) Ceramic Plates: High-perficientur materiae in semiconductor vestibulum

Ⅰ. Quid est raro Ceramic laminam?

Silicon Carbide Ceramic PRAEFIXUS structuram Ceramic materia factum de Silicon Carbide (microform) per specialem processus (ut spumans, 3D printing vel addendo pore formatam agentibus). Et Core features includit:

● Controllable porosity: XXX% -70% Novifacta in occursum necessitates diversis application missionibus.

● Uniformis pore mole distributio: Ensure Gas / Liquid Transmissus stabilitatem.

● Design Lightweight: Reducere apparatu industria consummatio et amplio operating efficientiam.

Ⅱ.Five Core Physical proprietatibus et User valorem de Porous Sic Ceramic laminis

I. High temperatus et scelerisque administratione (maxime solvere problema de apparatu scelerisque defectum)

● Extreme temperatus resistentia: Continua operantes temperatus pervenit MDC ° C (XXX% altior quam Alumina LATERAMEN).

● Maximum efficientiam scelerisque conductivity: CXX W / Conductors coefficiens W / (m k), ieiunium calor defendat sensitive components.

● Ultra-humilis scelerisque expansion: Thermal expansion coefficiente est solum 4.0 × 10⁻⁶ / ° C, idoneam operationem sub extremum caliditas, efficaciter vitandum excelsum temperatus deformationis.

II. Chemical Stabilitatem (Reducing Sustentacionem costs in mordere environments)

● Repugnant fortis acida et alkalisPotest sustinere mysteria media ut HF et H₂so₄

● Repugnant ad plasma exesa: Vita in sicco etching apparatu augetur plus quam III temporibus

III. Mechanica fortitudinem (extendens Equipment Vita)

● PRAESTITUO: Mohs duritia est ut altum quod 9.2, et gerunt resistentia melius quam immaculatam ferro

● Flectens vires: 300-400 MPa, supporting wafers sine warping

IV. Functionalization of raro structurae (Improving processus cede)

● Uniformis Gas distributio: CVD processus amet uniformitatem augetur ad XCVIII%.

● Praecise adsorption potestate: De positioning accurate electrostatic Chuck (Esc) is ± 0.01mm.

V. Munditiae Partitiones (per obsequium cum semiconductor-gradus signa)

● Nulla metallum contaminationem: Puritas> 99.99%, avoiding laganum contaminationem

● Auto-Purgato characteristics: Microporous structuram reduces particula depositione

III. Quattuor Key Applications of Puventa Sic laminas in Semiconductor vestibulum

Sem I: High-Temperature Processus Equipment (Diffusu fornacis / Annealing fornacem)

● user dolor illud: Traditional materiae facile deformari, unde in laganum scandalum

● Solutio: Sicut tabellarius laminam, quod operatur stabiliter sub MCC ° C environment

● notitia collatio: Quod scelerisque deformatio est LXXX% inferior quam quod Alumina

Scenario II: eget vapor depositione (CVD)

● user dolor illud: Inimen Gas distribution afficit amet qualis

● SolutioEt rara structuram facit reactionem Gas diffusio uniformitatem pervenire XCV%

● Industry Case: De 3D NAND MINUS MORMA Tenues film depositione

Sem III: Arida Etching Equipment

● user dolor illud: Plasma Exesion nunquamRTENS pars vitae

● Solutio: Anti-Plasma perficientur extenditur sustentacionem cycle ad XII mensibus

● sumptus-efficaciam: Equipment downtime reducitur per XL%

IV sem, Wafer Cleaning System

● user dolor illud: Frequenter postea partium ex acid et alkali corrosio

● Solutio: HF acidum resistentia facit ministerium vitae pervenire plus V annorum

● verificationem notitia: Fortitudo retention rate> XC% post M Purgato CYCLES

IV. III Maior lectio commoda comparari traditional materiae

V. FAQ ad Industry users

Q1: Est raro Ceramic laminam idoneam ad Gallium Nitride (Gan) fabrica productio?

Exaudio: Sic, et altum temperatus resistentia et excelsum scelerisque conductivity sunt praecipue idoneam ad Gan epitaxial incrementum processus et applicantur ad 5g basi statione chip vestibulum.

Q2: Quam eligere Porosity modularis?

Exaudio: Elige secundum applicationem sem;

● Distribut Gastio: XL% -50% aperta Porosity commendatur

● Vacuum adsorptio: LX% -70% princeps Porosity est suadetur

Q3: Quid est differentia cum aliis Silicon Carbide Ceramics?

Exaudio: Comparari cum densaCeramics sic, Porae structuras sequenti commoda:

● L% pondus reductionem

● XX temporibus incremento in specifica superficies regio

● XXX% reductionem in scelerisque accentus