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MOCVD Susceptor
  • MOCVD SusceptorMOCVD Susceptor
  • MOCVD SusceptorMOCVD Susceptor

MOCVD Susceptor

Mucvd susceptator est charta cum planetarium pervideo et profesional ad suum firmum perficientur in epitaxy. Vetisk Semiconductor est dives experientia in machining et CVD sic coating huius uber, grata est communicate nobiscum de realis casibus.

SicutCVD sic coatingManufacturer, Vetec Semiconductor habet facultatem providere vobis Aixtron G5 Mucvd susceptatores quae est ex princeps puritatis graphite et CVD sic coating (sub 5ppm). 


Micro LEDs technology est perturbando existentium ECOSYTEM cum modi et accedit quod habent usque nunc tantum visum est in LCD et Semiconductor industrias, et Aixtron G5 Mucvd ratio perfecte sustinet haec restringens et Tractus Ratio. Aixtron G5 est maxime potens Mocvd reactors disposito praesertim pro Silicon, secundum Gan epitaxy incrementum.


Essential omnes epitaxial alba produci habere ipsum stricta intollerentur distribution et ipsum humilis superficiem defectum campester, quae requirit innovativeMOCVD Technology.

Aixtron G5 est horizontalis planetarium orbis epitaxy ratio, maxime planetarium disco, Mucvd susceptator, operimentum annulum, cvardo, pin + princeps uber graphite, semiconductor + altum puritatem Graphite, SICENTZ PIN, PROTEMPLEGIUM GRAPHITE, SICENTZ PIN, QUAE PROTRINUS GRAPHITE, SICONDUCTOR QUINTZ,CVD Tac coating+ Puritas Graphiterigidum sensitet alia materiae.


Mucvd susceptator features sunt ut sequitur


✔ basi materia praesidium: CVD sic coating acts ut a tutela iacuit in epitaxial processus, quod potest efficaciter ne exesa et damnum de externa environment ad basis materia, providere certa tutela mensuras superiores, et extend ad servitium vitae apparatu.

✔ optimum scelerisque conductivityEt CVD sic coating habet optimum scelerisque conductivity et potest cito transferre calor a basi materia ad coating superficiem, improving ad scelerisque administratione efficientiam in epitature et ensuring in apparatu operatur in aptature temperatus range.

✔ amplio amet qualis: CVD sic coating potest providere torto, uniformis superficiem, providing bonum fundamentum ad film augmentum. Potest reducere defectus per cancellos mismatch, amplio crystallination et qualis est film, et sic amplio perficientur et reliability de epitaxial amet.

Basic physica proprietatibus CVD sic coating:

SEM DATA OF CVD SIC FILM


Basic physica proprietatibus CVD sic coating
Res Typical valorem
Crystal structure FCC β tempus Polycrystalline, maxime (CXI) Oriented
Sic coating density 3,21 G / CM³
Sic coating duritia MMD Vickers Duritia (500g Load)
Frumea magnitudine II ~ 10mm
Chemical castitas 99,99995%
Calor DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flacalis fortitudinem CDXV MPA Rt IV-Point
Young 's modulo CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


Overview de semiconductor chip epitaxy industria catholica:

SiC Epitaxy Si Epitaxy GaN Epitaxy

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