Pii Carbide Coating

VeTek Semiconductor speciale in productione ultra purum Siliconis Carbide productorum Coating, hae tunicae ad graphites, ceramicos et metalla refractoria applicanda destinantur.

Nostrae puritatis altae coatinges praesertim in usu in semiconductoribus et in industriis electronicis iaculis sunt. Pro tutelae laganum baiulum, susceptores et elementa calefacientia inserviunt, ea custodiendo a ambitus mordax et reactiva, quae in processibus occurrunt, ut MOCVD et EPI. Hi processus integrales sunt processus lagani et fabrica fabricandi. Accedit, nostrae membranae aptae sunt applicationibus in fornacibus vacuo et calefactione exempli, ubi summus vacuum, reactivum et oxygenii ambitus offendit.

In VeTek Semiconductor, solutionem comprehensivam offerimus cum facultatibus machinarum machinarum provectorum. Hoc efficit ut basium componentium utentes graphite, ceramico, vel refractariis metallis fabricare, ac ceramicam SiC vel TaC coatings in aedibus adhibere possimus. Etiam operas efficiens praebemus ad partes suppeditatas, ut flexibilitas ad diversas necessitates occurrat.

Nostri Silicon Carbide Productorum Coating late usi sunt in epitaxy Si, epitaxy SiC, systema MOCVD, RTP/RTA processus, processus engraving, processus ICP/PSS engraving, processus variarum LED generum, inter caeruleum et viridem LED, UV LED et profunde UV DUXERIT etc., quod aptatur instrumentis ex LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI et sic porro.

Reactor partes facere possumus;

Pii Carbide Coing multa singularia commoda:

Silicon Carbide Coating several unique advantages

VeTek Semiconductor Silicon Carbide Coating Parameter

Basicae physicae proprietates CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β Phase polycrystallina, maxime (111) ordinatur
Sic coating densitas	3.21 g/cm³
Sic coatingHardness	MMD Vickers duritiem 500g onus
Frumenti amplitudo	2~10μm
Puritas chemica	99.99995%
Calor Capacity	640 J·kg^-1·K^-1
Sublimatio Temperature	2700℃
Flexurae Fortitudo	415 MPa RT 4-punctum
Modulus	430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity	300W·m^-1·K^-1
Scelerisque Expansion (CTE)	4.5×10-6K^-1

CVD SIC CRYSTALLOS STRUCTURA

CVD SIC FILM CRYSTAL STRUCTURE

Silicon Carbide obductis Epi susceptor SiC Coating Wafer Portitorem SiC obductis Satellite operculum MOCVD CVD SiC Coating Wafer Epi Susceptor CVD SiC coating Heating Elementum Aixtron Satellite laganum carrier SiC Coating Epi susceptor SiC coating halfmoon graphite parts

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GaN epitaxial susceptor

Ut a ducens Gan epitaxial susceptator elit et fabrica in Sina, Vetek Semiconductor Gan epitaxial susceptator est summus praecisione susceptator disposito pro Gan epitaxial incrementum processus, solebat suscipio epitaxial apparatu ut CVD et Mocvd. In vestibulum Gan cogitationes (ut potentia electronic cogitationes, RF cogitationes, LEDs, etc.), Gan epitaxial pependit subiectum et Achieves altus-species depositione elit. Receperint tuum adhuc inquisitionis.

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Sic iactaret laga carrier

Sicut ducens sic coarta laga carrier elit et manufacturer in Sina, Vetek Semiconductor est SIC iactaret lagam carrier quod factum est ex summus qualitas graphite et cvd sic longo tempore in maxime epitaxial reactors. Vetek Semiconductor habet industria, ducens processus capabilities et potest occursum customers 'variis amet elit pro sic coated lagam carriers. Vetek Semiconductor vultus deinceps ad constituendum diu-term cooperantem necessitudinem cum te et crescente simul.

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SiC Coating graphite MOCVD calefacientis

VeTeK Semiconductor MOCVD calefacientis producit SiC Coating graphite, quod est clavem processus processus MOCVD. Substructio in alta puritate graphite subiecta, superficies alta puritate SiC coatingit ut optimam summus temperaturae stabilitatem et corrosionem resistentiam praebeat. Cum magna qualitate et valde amet officia producti, VeTeK Semiconductoris SiC Coating graphitae MOCVD calefacientis est optima electio ad obtinendum processum MOCVD stabilitatem ac tenuem depositionem qualitatis. VeTeK Semiconductor prospicit ut particeps fiat tua.

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Pii Carbide Coated Epi Susceptor

VeTek Semiconductor primarius est opificem et supplementum productorum SiC coatingarum in Sinis. VeTek semiconductoris pii carbidi bitumen Epi susceptoris industriam summam qualitatem habet, pluribus stylis fornacibus epitaxialis incrementi apta est, et operas productos valde nativus praebet. VeTek Semiconductor prospicit ad longum tempus socium in Sinis fieri.

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SiC coating Monocrystallini Pii epitaxial lance

Monocrystalline Silicon epitaxial Tray est momenti accessorium in monocrystalline Silicon epitaxial incrementum fornacem, ensuring minimam pollutio et firmum epitaxial incrementum elit. Vetek Semiconductor est Sicum monocrystalline Silicon epitaxial lance habet ultra-diu muneris vitae et praebet varietate customization options. Vetek semiconductor vultus deinceps ad decet tuum diu-term socium in Sinis.

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Solidum sic wafer carrier

Vetek Semiconductor solidum sicca sicca carrier est disposito ad altum temperatus et corrosio repugnant environments in semiconductor epitaxial processus et apta omnium genera laganum vestibulum processus cum excelsum pura requisita. Vetek Semiconductor est a ducens laganum carrier elit in Sina et vultus deinceps ad decore vestri diu term particeps in semiconductor industria.

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Sicut professionalis {LXXVII} Manufacturer et elit in Sina, habemus nostram officinam. Utrum vos postulo customized servicia in occursum specifica necessitatibus vestris regione vel volunt emere provectus et durabile {LXXVII} in Sina, vos potest relinquere nos nuntium.

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Pii Carbide Coating

Reactor partes facere possumus;

Pii Carbide Coing multa singularia commoda:

VeTek Semiconductor Silicon Carbide Coating Parameter

CVD SIC CRYSTALLOS STRUCTURA

GaN epitaxial susceptor

Sic iactaret laga carrier

SiC Coating graphite MOCVD calefacientis

Pii Carbide Coated Epi Susceptor

SiC coating Monocrystallini Pii epitaxial lance

Solidum sic wafer carrier

Mitte Inquisitionem

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De nobis

Products

Nobis loquere

Phone

Fax

E-mail

Oratio