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Silicon carbide coating lagae possessor
  • Silicon carbide coating lagae possessorSilicon carbide coating lagae possessor

Silicon carbide coating lagae possessor

Et Silicon Carbide coating Wafer Holder by Veteksemicon est machinator pro praecisione et perficientur in Advanced semiconductor processus ut Mocvd, LPCVD et summus temperatus annealing. Cum autem uniformis CVD sic coating, haec lagana possessor ensures eximia scelerisque conductivity, eget inertness, et mechanica vires - essential pro contagione-liber, summus cede laganum processus.

Et Silicon Carbide (microform) coating laganum possessor est essentialis component in semiconductor vestibulum, specie disposito pro ultra-mundum, summus temperatus processibus ut mulge (metallum organicum chemical vapor depositione), LPCVD, Pecvd et scelerisque Annealing. Per integrating densa et uniformisCVD sic coatingIn robust Graphite vel Ceramic subiecta, haec laga carrier ensures tam mechanica stabilitatem et eget inertness sub dura ambitus.


Ⅰ. Core munus in semiconductor processus


In semiconductor fabricatione, laganum possidentium ludere a pivotal partes in cursus lagana sunt securely sustentari, uniformiter calefacto, et protected per depositionem vel scelerisliter curatio. In sic coating praebet inerti obice inter basis subiecta et processus elit efficaciter minimizing particula contaminationem et outgassing, quae critica ad consequi altum fabrica cede et reliability.


Key applications includit:


● epitaxial incrementum (sic, Gan, Gaas laminis)

● Thermal oxidatio et diffusio

● High-temperatus Annealing (> MCC ° F)

● Wafer serie et firmamentum in vacuo et Pure Plasma Processus


Ⅱ. Superior corporis characteres


Basic physica proprietatibus CVD sic coating
Res
Typical valorem
Crystal structure
FCC β tempus Polycrystalline, maxime (CXI) Oriented
Densitas
3,21 G / CM³
Durities
MMD Vickers Duritia (500g Load)
Frumea magnitudine
II ~ 10mm
Chemical castitas
99,99995%
Calor
DCXL J · kg-I · k-I
Sublimation Temperatus
MMDCC ℃
Flacalis fortitudinem
CDXV MPA Rt IV-Point
Young' s Modulus
CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity
300W · M-I · K-I
Thermal Expansion (CTE)
4.5 × 10-6k-I


Haec parametri demonstrabo in laganum possessor est scriptor facultatem ad ponere euismod stabilitate etiam sub rigorous processus cycles, faciens idealis pro proximo-generation fabrica vestibulum.


Ⅲ. Processus Workflow - Step-by Step Application missione


Lets 'accipereMucvd epitaxyUt typical processus sem ad illustrandum est usus:


1. Wafer PlacementEt Silicon, Gan, aut sicca lagana leniter positus onto in sic-iactaret lagam susceptos.

2. Thalamum calefactio: Et thalamum est calefacto celeriter ad altum temperaturis (~ 1000-1600 ° C). Sic coating ensures efficiens scelerisque conduction et superficiem stabilitatem.

3. Praecursor introductio: Metal-organicum praecursores influunt in cubiculum. Et sic coating resistit chemical impetus et prohibet outgassing a subiecto.

4. Epitaxial layer incrementum: Uniform layers deposita sine contagione vel scelerisque distoRTion, gratias ad optimum et eget inertness in praeclara.

5. Refrigescant et extractionPost dispensando, in possessor concedit tutum scelerisque transitus et laganum retrieval sine particula effusione.


Per maintaining dimensional stabilitatem, chemical puritatem, et mechanica vires, in sicco coating laganum suscipit instrumentum improves processus cedat et reduces tool downtime.


CVD Sic amet Crystalli structuram:

CVD SIC FILM CRYSTAL STRUCTURE


Veteksemicon Product CELLA:

Veteksemicon Product Warehouse


Hot Tags: Silicon Carbide Wafer Holder, Sic coarta Wafer Support, cvd sic wafer carrier, altum temperatus laganum lance, scelerisque processus lagae lagu possessor
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