Sic iactaret lagana carrier etching

Core Application of Sicci tunicas laga carrier pro Etching processus

I. Gan film incrementum et Etching in DUXERIT vestibulum

Sic tunicas carriers (ut PSS Etching Portitorem) sunt ad auxilium sapphirus subiectum (mentis sapphyrus subiecta, p) in DUXERIT productio et praestare chemical vapor depositione (Mocvd) de Gallis Nitride (Gale) in altum temperaturis. Et remotus a infectum etching processus ad formare superficies mictroctructure ad amplio lux extraction efficientiam.

Partes: De laga carrier indiget sustinere temperaturis usque ad MDC ° C et eget corrosio in plasma etching elit. In excelsum puritatem (99,99995%) et densitas de sic coating ne metallum contaminationem et ensure uniformitatem ad Gan amet.

II. Semiconductor Pure / sicco Etching Processus

InICP (induco coniunctive plasma) Etching, Sic tunicas carriers consequi uniformis calor distribution per optimized airflow consilio (ut laminar fluxus modus), vitare impuritatem diffusionem et amplio etching accurate. Exempli gratia, Veteksemicon in sicco ICP etching carrier potest sustinere sublimationem temperatus MMDCC ° C et idoneam ad summus industria plasma environments.

III. Solaris cellula et potentia fabrica vestibulum

Sic carriers praestare bene in summus temperatus diffusio et etching de Silicon wafers in photovoltaic agro. Eorum humilis scelerisque expansion coefficiente (4.5 × 10⁻⁶ / k) reduces deformatio causatur per scelerisque accentus et extendit ministerium vitae.

Physica proprietatibus et commoda sicco laga laganum carrier pro Etching

I. tolerantia ad extrema environments:

High temperatus stabilitatem:CVD sic coatingPotest operari in MDC ° C Aeris vel MM MM Vacuum environment pro longo tempore, quod multo altior quam traditional quartz vel graphite portarentur.

ROSIO resistentia: Sic habet optimum resistentia ad acida, alkalis, sales et organicum solvents et idoneam semiconductor productio lineae crebris eget elit.

II. Thermal et Mechanica Properties:

Maximum scelerisque conductivity (CCC w / MK), celeri calor dissipare reduces scelerisque gradientibus, ensures laga temperies uniformitatem, et vitat film crassitudine deviationis.

Magno Mechanica vires: flexurae fortitudinem ad CDXV MPA (locus temperatus) et tamen maintains plus XC% vires ad altum temperies, vitandum carrier fregisset vel delatione.

Superficies metam: SIC (pressura Sinus Silicon Carbide) habet humilis superficiem asperitas (<0.1μm), reducendo particula contaminationem et improving laganum cede.

III. Material matching Optimization:

Minimum scelerisque dilatatio differentia inter Graphite subiecta et sic coating: per adjusting coating processus (ut gradiente depositionem), interface accentus reducitur et coating impeditur a cortices.

Puritas et humilis defectus: et CVD processus ensures in coating puritatem> 99,9999%, avoiding metallum Ion contagione sensitivo processibus (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica (ut sic potentia fabrica fabrica).

TumC physica proprietatibus CVD sic coating

CVD sic coating film crystal structure

Vet sexemicon tabernas