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SIC ICP Etching laminam
  • SIC ICP Etching laminamSIC ICP Etching laminam
  • SIC ICP Etching laminamSIC ICP Etching laminam

SIC ICP Etching laminam

Veteksemicon praebet summus perficientur sic ICP Etching laminis, disposito ICP etching applications in semiconductor industria. Eius unicum materiam proprietatibus enable ut praestare bene in altum temperatus, princeps pressura et eget corrosio environments, ensuring optimum perficientur et longa-term stabilitas in variis etching processus.

ICP Etching (inductive copulata Plasma Etching) technology est praecisione Etching processus in semiconductor vestibulum, communiter pro summus praecisione et summus qualis forma translatione, maxime idoneam et altum foraminis etching, microform, exemplar processus, etc.


Semicon's SIC ICP etching laminam specialiter disposito pro ICP processus, uti summus qualitas sic materiae, et potest providere optimum perficientur in altum temperatus, fortis mordax et excelsum industria environments. Ut a key component ad portantes et supporting,Icp etchPlate ensures stabilitatem et efficientiam in etching processus.


SIC ICP Etching laminamProduct Features


ICP Etching process

● Summus temperatus tolerantia

SIC ICP Etching laminam potest sustinere temperatus mutat usque ad MDC ° C, cursus firmum usum in altum temperatus ICP etching environment et avoiding deformatio aut perficientur degradation per temperatus fluctuations.


●  Optimum corrosio resistentia

Silicon carbide materialesPotest efficaciter resistere altus corrosive chemicals ut hydrogenii fluoride, hydrogenii chloride, sulphuric acidum, etc, ut potest expositae in longo-term usus.


●  Low scelerisque expansion coefficient

SIC ICP Etching laminam habet humilitatem scelerisque expansion coefficientem, quod potest ponere bonum dimensional stabilitatem in altum temperatus environment, reducere accentus et deformatio per temperatus mutationes, et accentus et deformatio per temperatus mutationes et curare accurate etching processus.


●  Princeps duritia et gerunt resistentia

Sic habet duritiam usque ad IX mohs duritiem, quod potest efficaciter ne mechanica gerunt quod potest fieri per etching processus, extend muneris vitae et redigendum replacement frequency.


● Excellent scelerisque conductivity

Optimum scelerisque conductivity ensures quodSic TrayPotest cito dissipare calor per Etching processus, avoiding loci temperatus augetur per calidum cumulus, ita ensuring firmitatem et uniformitatem etching processus.


Cum firmamentum fortis technica quadrigis, Veteksemicon SIC ICP etching Tray has completed variis difficilis projects et providet customized products secundum opus tuum. Nos es vultus deinceps ad inquisitionis.


Basic Physical proprietatibus CVD sic:

BAsic physica proprietatibus CVD sic
Res
Typical valorem
Crystal structure
FCC β tempus Polycrystalline, maxime (CXI) Oriented
Densitas
3,21 G / CM³
Durities
MMD Vickers Duritia (500g Load)
Frumea magnitudine
II ~ 10mm
Chemical castitas
99,99995%
Calor
DCXL J · k-1· K-1
Sublimation Temperatus
MMDCC ℃
Flacalis fortitudinem
CDXV MPA Rt IV-Point
Young 's modulus
CDXXX GPA 4pt flectere, MCCC
Scelerisque conductivity
300W · M-1· K-1
Thermal Expansion (CTE)
4.5 × X-6K-1


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