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SiC coating Monocrystallini Pii epitaxial lance
  • SiC coating Monocrystallini Pii epitaxial lanceSiC coating Monocrystallini Pii epitaxial lance

SiC coating Monocrystallini Pii epitaxial lance

Monocrystalline Silicon epitaxial Tray est momenti accessorium in monocrystalline Silicon epitaxial incrementum fornacem, ensuring minimam pollutio et firmum epitaxial incrementum elit. Vetek Semiconductor est Sicum monocrystalline Silicon epitaxial lance habet ultra-diu muneris vitae et praebet varietate customization options. Vetek semiconductor vultus deinceps ad decet tuum diu-term socium in Sinis.

VeTek semiconductor's SiC coating monocrystallini silicon epitaxiale traculum specialiter designatum est incrementi epitaxialis siliconis monocrystallini et in applicatione industrialis epitaxiae monocrystallini siliconis epitaxiae et semiconductoris affinis munus magni momenti agit.Sic coatingNon solum significantly amplio ad temperatus resistentia et corrosio resistentia de lance, sed etiam ensures diu terminus stabilitatem et optimum perficientur in extrema environments.


Commoda sicci


SiC coating Monocrystalline silicon epitaxial tray working diagram

● High scelerisque conductivity: SiC efficiens vehementer ampliat capacitatem lance thermarum administratione et potest efficaciter dispergere calorem ab summus potentiae machinas generatae.


●  Corrosion resistentia: Sic coating peragit bene in altum temperatus et corrosive environments, ensuring diu-term muneris vitae et reliability.


●   Superficiem uniformitatem: Providet plana et lenis superficies, effective vitandum vestibulum errores causatur per superficiem inaequalis et ensuring stabilitatem epitaxial incrementum.


Secundum ad investigationem, cum pie mole de graphite subiectum est inter C et D NM, in Sic gradiente coating parari possunt in graphite subiecta, et sic coating habet fortior anti-oxidation facultatem. Et oxidatio resistentia in sicco in hoc graphite (triangularem curva) multo fortior quam aliae specificatibus graphite, idoneam ad incrementum unius crystallum Silicon epitaxy. Vetek Semiconductor est Sicum Monocrystalline Silicon Epitaxial Tray utitur SGL Graphite sicutGraphite subiecta, Quod non potest consequi huiusmodi perficientur.


VeTek Semiconductoris SiC efficiens Monocrystallinum silicon epitaxialis lance utitur optimis materiis graphitis et processui technologiae SiC antecedens. Maxime, quaenam producta customization eget clientibus, optime convenire possumus.


Basicae physicae proprietates CVD Sic coating


Basicae physicae proprietates CVD Sic coating
Res
Typical valorem
Crystal structure
FCC β Phase polycrystallina, maxime (111) ordinatur
Densitas
3,21 G / CM³
Durities
MMD Vickers Duritia (500g Load)
frumentum Size
2~10μm
Puritas chemica
99.99995%
Calor
DCXL J · k-1· K-1
Sublimatio Temperature MMDCC ℃
Flacalis fortitudinem
CDXV MPA Rt IV-Point
Young 's modulo
CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity
300W · M-1· K-1
Thermal Expansion (CTE)
4.5 × X-6K-1

Vetek semiconductor productio officinae


Graphite epitaxial substrateSemiconductor heating furnace equipmentGraphite ring assemblySemiconductor process equipment

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