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Sic iactaret graphite hydria susceptos ad epi
  • Sic iactaret graphite hydria susceptos ad epiSic iactaret graphite hydria susceptos ad epi
  • Sic iactaret graphite hydria susceptos ad epiSic iactaret graphite hydria susceptos ad epi
  • Sic iactaret graphite hydria susceptos ad epiSic iactaret graphite hydria susceptos ad epi

Sic iactaret graphite hydria susceptos ad epi

Dolium genus epitaxial laganum basis calefactionis productum est multiplex processus technologiae, quod valde difficilis est ad apparatus et facultatem machinis. Vetek semiconductor apparatum provexit et experientiam copiosam in expediendo dolio graphite graphite suscepto pro EPI, eadem praebere potest cum vita officina originalis, doliis epitaxialibus magis cost-efectis. Si interest in actis nostris, nihil dubitas nos contingere.
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Vetek Semiconductor est Sinis Manufacturer & Supplier, qui maxime producit sic iactaret graphite hydriam susceptos ad epi per multos annos experientia. Spero aedificare negotium necessitudinem tecum.EPI (Epitaxy)processus criticus in fabricandis semiconductoribus provectorum est. Involvit depositionem tenuium materiae in subiecto ad structuras fabricandas multiplices fabricandas. SiC obductis graphitis susceptoris dolii EPI pro susceptoribus in EPI reactoribus communiter adhibentur ob earum optimam scelerisque conductivity et resistentiam ad altas temperaturas. cumCVD-sic coatingmagis resistit contaminationi, exesioni ac scelerisque inpulsa. Hoc consequitur longioris vitae spatium pro susceptore et meliore cinematographico qualitate.


commoda nostra SiC Coated Graphite Ferocactus Susceptor:


✔ Reducitur contagione: SiC natura pigra prohibet immunditiam superficiei susceptoris adhaerere, periculum contagionis membranae depositae minuere.

✔ Auctus erosion resistentia: SIC est significantly magis resistens ad erosion quam conventional graphite, ducens ad longiorem lifespan ad susceptos.

✔ Improved scelerisque stabilitatem: Sic habet optimum scelerisque conductivity et potest sustinere altum temperaturis sine significant distortione.

✔ Auctus film qualis: Melior scelerisque stabilitas et contractio minuuntur effectus in altioribus qualitatibus depositis cinematographicis cum meliore uniformitate et crassitudine adhibito.


Applicationes:

SiC susceptores dolii graphite obductis late usi sunt in variis applicationibus EPI, inclusis:

✔ Gan-secundum LEDs

Power electronics

✔ optoelectronic cogitationes

✔ High, frequency transistors

Sensors

Product parametri Sic Coated Graphite Ferocactus Susceptor

Physica proprietatibusIsostatic Graphite
Res Unitas Typical valorem
Mole density G / CM³ 1.83
duritia HSD 58
Electrica resistentibus μΩ.m 10
Flacalis fortitudinem MPA 47
Compressive fortitudinem MPA 103
distrahentes Fortitudo MPA 31
Young 's modulus GPa 11.8
Thermal Expansion (CTE) 10-6K-1 4.6
Scelerisque conductivity W · M-1· K-1 130
Mediocris frumenti magnitudine μm 8-10
Poratus % 10
Cinis contentus ppm ≤10 (post purificati)

        Nota: Antequam coating, faciemus primum purificationem, post coating, faciet secundum purificationem.

Basic physica proprietatibus CVD sic coating

Basic physica proprietatibus CVD sic coating
Res Typical valorem
Crystal Structure FCC β tempus Polycrystalline, maxime (CXI) Oriented
Sic coating densitas 3.21 G / CM³
CVD SiC coating duritia MMD Vickers Duritia (500g Load)
Frumea magnitudine II ~ 10mm
Chemical castitas 99,99995%
Calor Capacity DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flacalis fortitudinem 415 MPa RT 4-punctum
Young 's modulus 430 Gpa 4pt bend, 1300℃
Scelerisque conductivity 300W · M-1· K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1

Et semiconductorSiC Coated Graphite Ferocactus Susceptor pro EPIProductio Shop

SiC Coated Graphite Barrel Susceptor for EPI products shops

Hot Tags: Sic iactaret graphite hydria susceptos ad epi
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Percontationes de Silicon Carbide Coating, Tantalum Carbide Coating, Graphite speciale vel indicem pretiosum, electronicam tuam nobis relinque et intra 24 horas erimus.
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