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SIC iactaret dolium susceptos pro LPE Pe2061s
  • SIC iactaret dolium susceptos pro LPE Pe2061sSIC iactaret dolium susceptos pro LPE Pe2061s

SIC iactaret dolium susceptos pro LPE Pe2061s

Cum unus e primoribus lagani susceptoris plantarum in Sinis fabricandis, Semiconductor VeTek continuas progressus in laganum susceptorem productorum fecit et prima electio facta est per multos artifices laganum epitaxialem. SiC Coated Barrel Susceptor pro LPE PE2061S provisum a VeTek Semiconductor designatus est pro LPE PE2061S 4'' lagana. Susceptus carbidam Pii durabilem tunicam habet quae effectum et vetustatem in LPE (liquida period epitaxy) meliorem habet. Grata inquisitione tua, expectamus ut diuturnum tempus particeps fiat.


Vetek semiconductor est professional Sina sic iactaret dolium susceptosLPE Pe2061sManufacturer et elit.

VeTeK dolium semiconductorem SiC bituminatum susceptorem pro LPE PE2061S productum est summus effectus applicando carbidi pii in superficie graphite isotropici valde purgati. Hoc fit per VeTeK semiconductoris proprietatisVapor chemicus Depositio (CVD)processus.

Noster SiC Coated Barrel Susceptor pro LPE PE2061S est genus depositionis CVD dolii reactor epitaxialis destinatus ad certas actiones liberandas in extremis ambitibus. Eius adhaesio coatingis eximia, resistentia oxidationis summus temperatura, et repugnantia corrosio optimam electionem usui duris conditionibus faciunt. Accedit, eius profile uniformis scelerisque et laminae gasi fluunt exemplaris contagione ne contagione, altum quale incrementum epitaxiale obtineant.

Ferocum informibus consilio nostri semiconductorepitaxial reactorOptimizes laminar Gas fluxus patterns, cursus uniformis calor distribution. Hoc adjuvat ne aliquam contaminationem vel diffusio impudicitiis,ensuring summus qualis epitaxial incrementum in laga subsp.

Nos dicata providente nostra customers cum summus qualis, cost-effective products. Nostrum CVD sic tunicas hydria susceptator praebet utilitatem pretium competitiveness dum maintaining praeclara density ad utrumqueGraphite subiectaetSilicon carbide coatingfirmam tutelam praebens in ambitibus summus temperatus et mordax operandi.


SEM Data CVD sic amet Crystal structuram:

CVD SIC FILM CRYSTAL STRUCTURE


Et sic-iactaret dolium susceptos pro uno crystallum incrementum exhibet valde excelsum superficiem lenitate.

Id minimizes differentia in scelerisque expansion coefficient inter collocans inter mysterium subiecti

Pii carbide efficiens, efficaciter compagem vi emendans et crepuit et delaminationem praeveniens.

Ambo graphite substrato et carbido pii intexti altum habent conductivity scelerisque et scelerisque distribuendi facultates optimas.

Altum liquescens punctum habet, summus temperatusoxidatio resistentiaetcorrosio resistentia.



Basic physica proprietatibus CVD sic coating:

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Density 3,21 G / CM³
duritia MMD Vickers Duritia (500g Load)
Frumea magnitudine II ~ 10mm
Puritas chemica 99,99995%
Calor Capacity DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flacalis fortitudinem 415 MPa RT 4-punctum
Young 's modulo 430 Gpa 4pt bend, 1300℃
Scelerisque conductivity 300W · M-1· K-1
Scelerisque Expansion (CTE) 4.5 × X-6K-1


Vetek Semiconductor Sic linteondus hydriam susceptos pro LPE Pe2061s productio Shop:

SiC Coated Barrel Susceptor for LPE PE2061S Production Shop


Overview de semiconductor chip epitaxy industria catholica:

semiconductor chip epitaxy industry chain


Hot Tags: SiC Coated Ferocactus Susceptor pro LPE PE2061S'
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