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Sic iactaret graphite cruce Deflector
  • Sic iactaret graphite cruce DeflectorSic iactaret graphite cruce Deflector
  • Sic iactaret graphite cruce DeflectorSic iactaret graphite cruce Deflector

Sic iactaret graphite cruce Deflector

Et sic tunicas graphite cruce Deflector est a key component in unum crystal fornacem apparatu, eius negotium est ad dirigendam fusilia ex cruce ad crystallum incrementum zonam blande, et ut qualis et figura de uno crystallum incrementum potest et figura de uno crystallum et ut qualis et figura de uno crystallo growth.Vetek Semiconductor potest Providere et graphite et sic non coating materiae materiae ut contact us for more details.
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Vetek Semiconducotr est professional Sina sic iactaret graphite cruce Deflector Manufacturer et elit. Et sic iactaret graphite crucible deflector est crucial component in Monocrystalline fornacem apparatu, tasked cum blande guids fusilia ex cruce et crystallum incrementum incrementum, cursus qualis et figura de Monocrystal incrementum.


Functiones nostras Sic iactaret Graphite Crucible Deflector sunt:

Imperium fluere: moderatur processus siliconis fusilis in processu Czochralski, ut uniformis distributio et motus moderati Pii liquefacti ad promovendum cristallum incrementum.

Temperature ordinacione: Non adjuvat ad temperatus distribution intra fis Silicon, ensuring meliorem condiciones ad cristallum incrementum et minimizing temperatus gradientibus, quod posset afficiunt qualis est Monocrystalline Silicon.

Contaminatio Praeventionis: Profluentem siliconis fusilis moderans, adiuvat ne contagione e vase vel aliis fontibus, altam puritatem servans ad applicationes semiconductores requisitas.

Stabilitas: Deflector ad stabilitatem incrementi crystalli processum confert reducendo turbulentiam et constantem fluxum Pii liquefacti promovens, quod pendet ad proprietates crystalli uniformes assequendas.

Facilitation of crystal incrementum: per guiding fis Silicon in moderatur modo, et deflexio faciliorem incrementum de uno crystallum a fis Silicon, quae est per se producendo summus qualitas Monocrystalline Silicon Wafoni in Semiconductor.


Product parametri Sic Coated Graphite Crucible Deflector

Physica proprietatibus Isostatic Graphite
Res Unitas Typical valorem
Mole density g/cm³ 1.83
Durities HSD 58
Resistivity electrica μΩ.m 10
Flacalis fortitudinem MPA 47
Compressive fortitudo MPA 103
Tensile vires MPA 31
Young 's modulo GPa 11.8
Scelerisque Expansion (CTE) 10-6K-1 4.6
Scelerisque Conductivity W · M-1· K-1 130
Mediocris Frumenti Location μm 8-10
Porosity % 10
Cinis Content ppm ≤10 (post purificati)

Nota: Priusquam tunicam, primam purificationem, post vestitionem, secundam purificationem faciemus.


Basic physica proprietatibus CVD sic coating
Res Typical valorem
Crystal structure FCC β tempus Polycrystalline, maxime (CXI) Oriented
Densitas 3.21 g/cm³
Durities MMD Vickers Duritia (500g Load)
Frumenti Size 2~10μm
Chemical castitas 99,99995%
Calor DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flacalis fortitudinem 415 MPa RT 4-punctum
Modulus CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque Conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


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