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Sic iactaret summo laminam ad LPE Pe2061s
  • Sic iactaret summo laminam ad LPE Pe2061sSic iactaret summo laminam ad LPE Pe2061s
  • Sic iactaret summo laminam ad LPE Pe2061sSic iactaret summo laminam ad LPE Pe2061s
  • Sic iactaret summo laminam ad LPE Pe2061sSic iactaret summo laminam ad LPE Pe2061s

Sic iactaret summo laminam ad LPE Pe2061s

Vetek Semiconductor est penitus versantur in Sicque coating products pro multis annis et facti sunt ducit manufacturer et elit de sic linuit summo laminam pro LPE pe2061s in Sinis. Et sic loated summo laminam ad LPE pe2061s nos providere est disposito LPE Silicon epitaxial reactors et sita in vertice una cum dolium basi. Hoc Sic tunicas Top laminam pro LPE Pe2061s habet optimum habet rationem, ut princeps puritatis, optimum scelerisque stabilitatem et uniformitatem, quod adjuvat ad altum-qualitas epitaxial stratis. Non refert quid productum opus, expectamus inquisitionis.

VeTek Semiconductor Sinarum SiC Coated Top Plate professio est pro fabrica et elit PE2061S LPE.

VeTeK Semiconductor SiC Coated Top Plate pro LPE PE2061S in apparatu epitaxiali siliconis, in coniunctione cum dolii speciei corporis susceptoris ad sustentationem et lagana epitaxialem (vel subiecta) durante processu epitaxiali.

Et sic loated summo laminam ad LPE Pe2061s est typically factum est summus temperatus stabilis graphite materia. Vetek Semiconductor diligenter considerat factors ut scelerisque expansion coefficientem cum eligens aptissimum graphite materia, cursus fortis vinculum cum Silicon carbide coating.

Et sic tunicas Top laminam ad LPE pe2061s exhibet optimum scelerisque stabilitatem et chemical resistentia resistere summus temperatus et corrosi environment in epitaxy incrementum. Hoc ensures diu-term stabilitatem, reliability, et tutela lagana.

In Silicon epitaxial apparatu, in primaria munus totius CVD sic tunicas reactor est ad suscipere lagana et providere uniformis subiecto superficie ad incrementum epitaxial stratis. Praeterea, quod concedit in adjustments in loco et orientation de lagana, facilius imperium super temperatus et fluidi dynamics durante incrementum processus ad consequi desideravit incrementum conditionibus et epitaxial accumsan appetiit.

VeTek semiconductoria producta altam praecisionem et crassitudinem efficiens aequalem offerunt. Incorporatio quiddam iacuit etiam producti temporis spatium. in apparatu epitaxiali pii, in coniunctione cum susceptore corporis dolii typo sustinendi et uncta epitaxial (vel subiecta) durante processu incrementi epitaxialis.


CVD SIC COATING FILM CRYSTAL STRUCTURE


Basicae physicae proprietates CVD SiC efficiens:

Basic physica proprietatibus CVD sic coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Densitas 3,21 G / CM³
Durities MMD Vickers duritiem 500g onus
Frumea magnitudine II ~ 10mm
Chemical castitas 99,99995%
Calor Capacity DCXL J · k-1· K-1
Sublimation Temperatus MMDCC ℃
Flacalis fortitudinem 415 MPa RT 4-punctum
Modulus CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque Conductivity 300W · M-1· K-1
Thermal Expansion (CTE) 4.5 × X-6K-1


VeTek Semiconductor Production Shop

VeTek Semiconductor Production Shop


Overview de Semiconductor chip epitaxy Industry catenae:

Overview of the semiconductor chip epitaxy industry chain


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