Pii Epitaxy

Pii Epitaxy, EPI,Epitaxy, Epitaxial refert incrementum cristalli cum eodem cristallo directum ac crassitudines crystallinae in unico cristallino pii distento. Incrementum epitaxiale requiritur ad fabricam semiconductoris discretorum componentium et circuitus integrales, quia sordes in semiconductoribus contentae N-type et P-type includuntur. Per compositiones diversorum generum, semiconductorium machinae varias functiones exhibent.

Pii epitaxia incrementum methodi in gasi epitaxiam periodum dividi potest, epitaxy phase liquida (LPE), periodus solidi epitaxy, vapor chemicus depositionis incrementum methodus late in mundo usus est ut ob cancellos integritas occurrat.

Silicon epitaxiale typicum instrumentum societatis Italicae LPE repraesentatur, quod subcinericium epitaxialem hy pnotic tor, dolii genus hy pnotic-tor, semiconductor hy pnotic, laganum ferebat et sic porro. Schematicum schematis de dolio formatum epitaxiale per pelector reactionem cubiculi talis est. VeTek Semiconductor laganum laganum epitaxialem per pelectorem dolium praebere potest. Qualitas SiC obductis HY pelectoribus valde matura est. Qualitas aequivalens SGL; Eodem tempore, VeTek Semiconductor etiam potest praebere reactionem epitaxialem siliconis cavum vicus collium, vicus Baffle, metretam campanam et alia producta integra.

Susceptor Vertialis Epitaxialis pro Epitaxy Pii:

VeTek semiconductor principalis verticalis epitaxial susceptor products

SiC Coated Graphite Ferocactus Susceptor pro EPI SiC Coated Ferocactus Susceptor CVD SiC Coated Ferocactus Susceptor LPE SI EPI Susceptor Set

Horizonalis Susceptor Epitaxialis pro Epitaxia Pii:

Vetek semiconductor principalis horizontalis epitaxialis susceptor products

SiC coating Monocrystallini Pii epitaxial lance SiC Coated Support LPE PE2061S' Graphite Rotating Susceptor