CVD sic pancake susceptos

Et semiconductor CVD sic pancake susceptorum fabricari usura tardus eget vapor depositione (CVD) Technology ut optimum diuturnitatem et extrema temperatus adaptability. Et haec sunt eius principalis physica proprietatibus:

● Scelerisque stabilitatem: In excelsum scelerisque stabilitatem CVD SIC ensures firmum perficientur sub altum temperatus conditionibus.

● Low scelerisque expansion coefficient: Quod materia est maxime humilis scelerisque expansion coefficient, quod minimizes warping et deformatio fecit per temperatus mutationes.

● Chemical corrosio resistentia: Optimum chemical resistentia enables ad ponere excelsum perficientur in varietate dura environments.

Precise auxilium et optimized æstus translatio

Veteksemi scriptor pannke susceptos secundum sic iactaret est disposito ad accommodare semiconductor lana et providere optimum firmamentum in epitaxial depositione. In Sic Pancake susceptator est disposito usura provectus computational simulation technology ad minimize warping et deformatio per diversas temperatus et pressura conditionibus. Et typical scelerisque expansion coefficiens est de 4.0 × X^-6/ C, quae significat quod eius dimensional stabilitatem est significantly melius quam traditum materiae in altus-temperatus environments, ita ensuring consistency of wafer crassitudine (typically CC ad CCC mm).

In addition, in CVD Pancake susceptator praestat in æstus translatio, cum scelerisque conductivity usque ad CXX w / m K. Hoc excelsum scelerisque conductivity potest cito et efficaciter mores calor, augendae temperatus uniformitatem in fornacem, ut uniformis calor distribution in epitaxial depositione, et redigendum depositionis defectus per inaequaliter calor. Optimized calor translatione perficientur est critica ad meliorem deposition qualis, quod potest efficaciter reducere processus fluctuations et amplio cede.

Through these design and performance optimizations, VeTek Semiconductor's CVD SiC Pancake Susceptor provides a solid foundation for semiconductor manufacturing, ensuring reliability and consistency under harsh processing conditions and meeting the stringent requirements of the modern semiconductor industry for high precision and quality.

Cvd sic amet crystal structure

Basic physica proprietatibus CVD sic coating

Basic physica proprietatibus CVD sic coating
Res	Typical valorem
Crystal structure	FCC β tempus Polycrystalline, maxime (CXI) Oriented
Densitas	3,21 G / CM³
Durities	MMD Vickers Duritia (500g Load)
Frumea magnitudine	II ~ 10mm
Chemical castitas	99,99995%
Calor	DCXL J · k-1· K-1
Sublimation Temperatus	MMDCC ℃
Flacalis fortitudinem	CDXV MPA Rt IV-Point
Young 's modulus	CDXXX GPA 4pt flectere, MCCC ℃
Scelerisque conductivity	300W · M-1· K-1
Thermal Expansion (CTE)	4.5 × X-6K-1