Products

Pii Carbide Coating

VeTek Semiconductor speciale in productione ultra purum Siliconis Carbide productorum Coating, hae tunicae ad graphites, ceramicos et metalla refractoria applicanda destinantur.


Nostrae puritatis altae coatinges praesertim in usu in semiconductoribus et in industriis electronicis iaculis sunt. Pro tutelae laganum baiulum, susceptores et elementa calefacientia inserviunt, ea custodiendo a ambitus mordax et reactiva, quae in processibus occurrunt, ut MOCVD et EPI. Hi processus integrales sunt processus lagani et fabrica fabricandi. Accedit, nostrae membranae aptae sunt applicationibus in fornacibus vacuo et calefactione exempli, ubi summus vacuum, reactivum et oxygenii ambitus offendit.


In VeTek Semiconductor, solutionem comprehensivam offerimus cum facultatibus machinarum machinarum provectorum. Hoc efficit ut basium componentium utentes graphite, ceramico, vel refractariis metallis fabricare, ac ceramicam SiC vel TaC coatings in aedibus adhibere possimus. Etiam operas efficiens praebemus ad partes suppeditatas, ut flexibilitas ad diversas necessitates occurrat.


Nostri Silicon Carbide Productorum Coating late usi sunt in epitaxy Si, epitaxy SiC, systema MOCVD, RTP/RTA processus, processus engraving, processus ICP/PSS engraving, processus variarum LED generum, inter caeruleum et viridem LED, UV LED et profunde UV DUXERIT etc., quod aptatur instrumentis ex LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI et sic porro.


Reactor partes facere possumus;


Aixtron G5 MOCVD Susceptors


Pii Carbide Coing multa singularia commoda:

Silicon Carbide Coating several unique advantages



VeTek Semiconductor Silicon Carbide Coating Parameter

Basicae physicae proprietates CVD SiC coating
Property Typical Value
Crystal Structure FCC β Phase polycrystallina, maxime (111) ordinatur
Sic coating densitas 3.21 g/cm³
Sic coatingHardness MMD Vickers duritiem 500g onus
Frumenti amplitudo 2~10μm
Puritas chemica 99.99995%
Calor Capacity 640 J·kg-1·K-1
Sublimatio Temperature 2700℃
Flexurae Fortitudo 415 MPa RT 4-punctum
Modulus 430 Gpa 4pt bend, 1300℃
Scelerisque Conductivity 300W·m-1·K-1
Scelerisque Expansion (CTE) 4.5×10-6K-1

CVD SIC CRYSTALLOS STRUCTURA

CVD SIC FILM CRYSTAL STRUCTURE



View as  
 
PSS Etching Portitorem laminam ad Semiconductor

PSS Etching Portitorem laminam ad Semiconductor

Vetek Semiconductor est PSCHING PRAETERATOR laminam ad Semiconductor est summus qualitas, ultra-purus graphite carrier disposito laganum pertractatio processibus. Nostri carriers habere optimum perficientur et potest praestare etiam in dura environments, princeps temperaturis et dura eget elit conditionibus. Noster products sunt late in multis Europae et American fora et expectamus ad decet tuum diu-term socium in china.you sunt grata ad Sina ad visitare nostri Factory et discere de nostra technology et products.
Celeri scelerisque annealing susceptos

Celeri scelerisque annealing susceptos

VeTek Semiconductor principalis Rapid Thermal Annealing Susceptoris fabrica et supplementum in Sinis est, positus in solutiones pro semiconductoris industriae altae faciendo solutiones. Multos annos altae technicae cumulus in agro materiae SiC efficiens habemus. Our Rapid Thermal Annealing Susceptor has excellent high temperature resist and excellent thermal conductivity to meet the needs of a laganum epitaxial vestibulum. Gratum est quod officinas nostras in Sinis visitare ut plura de nostris technologia et fructibus discant.
Silicon-secundum Gan epitaxial susceptator

Silicon-secundum Gan epitaxial susceptator

Et Silicon-secundum Gan epitaxial susceptator est core component requiritur ad Gan epitaxial productio. Veteksemicon Silicon-fundatur Gan epitaxial est specialiter disposito Silicon-fundatur Gan epitaxial reactor ratio, cum commoda ut excelsum castitatem, optimum summus temperatus resistentia et corrosio resistentia. Receperint tua porro consultatio.
VIII Inch Halfmoon Pars LPE Reactor

VIII Inch Halfmoon Pars LPE Reactor

Vetek Semiconductor est ducens Semiconductor apparatu Manufacturer in Sina, focusing in R & D et productionem VIII inch helfmoon parte pro LP Lple Reactor. Non enim exaggeratus dives experientia super annis, praesertim in sic coating materiae, et committitur ad providing efficient solutiones tailored pro LP LPE epitaxial reactors. Nostrum VIII inch Helfmoon parte pro LPE Reactor est optimum perficientur et compatibility, et est necessaria clavis component in epitaxial vestibulum. Recipe tua inquisitionis discere magis de nostris products.
SiC Coated Pancake Susceptor pro LPE PE3061S 6'' Wafers

SiC Coated Pancake Susceptor pro LPE PE3061S 6'' Wafers

SiC Coated Pancake Susceptor pro LPE PE3061S 6'' lagana una est nucleorum partium in 6'' lagana epitaxialis lagani processus. VeTek Semiconductor praesens est opificem et supplementum e Pancake SiC Coated Susceptoris pro LPE PE3061S 6'' lagana in Sinis. SiC Coated Pancake Susceptor praebet egregias proprietates ut princeps corrosio resistentia, bonum scelerisque conductivity, et bonum uniformitatem. Exspecto tuam inquisitionem.
SIC iactaret auxilium pro LPE Pe2061s

SIC iactaret auxilium pro LPE Pe2061s

Vetek semiconductor est ducens manufacturer et elit de sic iactaret graphite components in Sinis. Sic tunicas Support LPP Pe2061s apta LPY Silicon Epitaxial reactor. Sicut fundum in dolium basis, sic coated firmamentum pro LPE pe2061s potest sustinere altum temperaturis de MDC gradibus Celsius, ita Achieving Ultra-Long Product vitae et reducendo Customer costs. Exspecto inquisitionis et adhuc communicationis.
Sicut professionalis {LXXVII} Manufacturer et elit in Sina, habemus nostram officinam. Utrum vos postulo customized servicia in occursum specifica necessitatibus vestris regione vel volunt emere provectus et durabile {LXXVII} in Sina, vos potest relinquere nos nuntium.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept