VIII-inch sic epitaxial fornacem et homepitaxial processum investigationis

1.2 CC mm (VIII-inch) sic epitaxial apparatu et processu conditionibus

Et experimenta descripsit in hac charta erant omnes conducted in 150/200 mm (VI / VIII-inch) compatible monolithic horizontalis calidum Wall Sour Sinis Electronics Technology Group Group. Et epitaxial fornacem sustinet plene automatic lava loading et unloading. Figura I est a schematic diagram internum structuram de reactionem cubiculum epitaxial apparatu. As shown in Figure 1, the outer wall of the reaction chamber is a quartz bell with a water-cooled interlayer, and the inside of the bell is a high-temperature reaction chamber, which is composed of thermal insulation carbon felt, high-purity special graphite cavity, graphite gas-floating rotating base, etc. The entire quartz bell is covered with a cylindrical induction coil, and the reaction chamber inside the bell is Electromagnetically calefacto per medium frequentiam inductionem potentia copia. As shown in Figure 1 (b), the carrier gas, reaction gas, and doping gas all flow through the wafer surface in a horizontal laminar flow from the upstream of the reaction chamber to the downstream of the reaction chamber and are discharged from the tail gas end. Ut consistency intra lagam, et laganum aere aere natantis basi semper rotentur in processus.

Subiecto in experimentum est commercial CL mm, CC mm (VI pollices, VIII pollices) directionem 4H °-angulus Polchish Polished SIC 4H-sic, in Shantxi Shuke Crystalli. Trichloroslane (Sihcl3, TCS) et Ethylene (C2H4) sunt sicut principalis incrementum fontes in processus experimentum, in quibus TCS et C2H4 sunt sicut Silicon Silicon, in quo TCS et C2H4 sunt sicut Silicon, in quo TCS et C2H4 sunt ut Silicon Silicon (N2) est usus, ut Silicon NITROGENIUM (N2) quod usus est ut Silicon NITROGENIUM (N2) est usus, ut et H2 Gas. Et epitaxial processum temperatus range est I DC ~ I DCLX ℃, processus pressura est VIII × CIII ~ XII × rate CXL CXL l / min.

1.3 epitaxial laganum testing et characterization

Fourierius infrared spectrometer (Equipment Manufacturer Thermalfisher, Model IS50) et Mercurius Probe concentration Tester (Equipment Manufacturer SEMILAB, Model 530l) sunt ad rationem et doping et distribution in concentione In crassitudine et doping concentratio cuiusque puncto in epitaxial layer determinatae puncta per diametrum linea intersting normalis linea principalis referat ore ad XLV ad centro lagae cum V mm in extremis. Nam CL mmfer, IX puncta sunt capta una una diameter linea (duo diametri essent perpendicularis ad invicem), et pro CC mm lana, XXI puncta, ut ostensum est in medio Area et in ripa (V mm in ore gladii et in ripa) de epitaxial wafer temptare superficiem asperitas epitaxial layer; De defectibus epitaxial layer sunt metiri usura super superficiem defectum tester (apparatu Manufacturer Sina electronics Kefenghua, Model Mars (IV) X (IV) CMX) pro ratione.

II experimentalem results et disputationem

2.1 epitaxial layer crassitudine et uniformitatem

Epitaxial layer crassitudine, doping concentration et uniformitatem unum de core Indicatores ad iudicandum qualis est epitaxial wafers. Accurately controllable thickness, doping concentration and uniformity within the wafer are the key to ensuring the performance and consistency of SiC power devices, and epitaxial layer thickness and doping concentration uniformity are also important bases for measuring the process capability of epitaxial equipment.

Figura III ostendit in crassitudine uniformitatem et distributio curvae CL mm et CC mm sic epitaxial wafers. Potest videri ex figure, quod epitaxial layer crassitudine distribution curvae est symmetrical circa centrum punctum lagae. Et epitaxial processum est DC s, in mediocris epitaxial layer crassitudine CL mm epitaxial lagana est 10.89 μm, et crassitudine uniformitas est 1.05%. Per calculation, in epitaxial incrementum rate est 65.3 μm / h, qui est typical ieiunium epitaxial processus campester. Sub eadem epitaxial processus tempus, epitaxial layer crassitudine in CC mm epitaxial lagana est 10,10 μm, in crassitudine uniformitatem est intra 1.36%, et altiore rate est 60.60 / h, qui est leviter quam ad CL mm / h, quod leviter minus quam in CL mm / h, qui leviter minus quam CL mm / h, qui leviter minus quam in CL mm / h, qui est leviter rate est 60.60 / H, qui est leviter quam ad CL mm epitaxial elit. Hic est quia non est manifestum damnum per viam cum Silicon Source et ipsum fons fluxus a flumissteam de reactionem thalamum per laganum superficiem ad downstream de reactionem cubiculum, et CC mm lana regio est maior quam CL mm. In Gas fluit per superficiem de CC mm laga longior distantia, et fontem Gas consumitur per viam est. Sub condicionem quod laganum custodit rotating, in altiore crassitudine epitaxial layer est tenuior, ita incrementum rate est tardius. Altiore, in crassitudine uniformitatem CL mm et CC mm epitaxial wafers est optimum, et processus facultatem in apparatu potest occursum in requisitis summus qualis cogitationes.

2.2 epitaxial layer doping concentration et uniformitatem

Figura IV ostendit doping concentration uniformitatem et curva distribution of CL mm et CC mm mm epitaxial wafers. Sicut potest videri ex figure, concentratione distribution curvae in epitaxial lagana manifesta symmetriam ad centrum ad laganum. Et doping concentration uniformitatem ad CL mm et CC mm epitaxial layers est 2.80% et 2.66% respectively, quod potest esse imperium intra III%, quod est optimum gradu inter gentium similis apparatu. Doping concentration curvam epitaxial iacuit distribuitur in "w" figura diameter directionem, quae maxime determinatur per fluxus agro horizontali muro epitaxial in laminarno fluunt a aere abdisste finem in laminarno fluunt a caeli superficiem; because the "along-the-way depletion" rate of the carbon source (C2H4) is higher than that of the silicon source (TCS), when the wafer rotates, the actual C/Si on the wafer surface gradually decreases from the edge to the center (the carbon source in the center is less), according to the "competitive position theory" of C and N, the doping concentration in the center of the wafer gradually decreases toward the edge. In order to obtain excellent concentration uniformity, the edge N2 is added as compensation during the epitaxial process to slow down the decrease in doping concentration from the center to the edge, so that the final doping concentration curve presents a "W" shape.

2.3 epitaxial layer defectus

Insuper et crassitudine et doping concentration, in gradu epitaxial layer defectus imperium est etiam core modularis mensuræ qualitas epitaxial et momenti indicator processus facultatem epitaxial apparatu. Licet SBD et Mosfet habere diversas requisita defectus, manifestum superficiem EREGUS defectibus ut stillabunt defectus, triangulo defectuum, carrot defectuum, et mosfet definierunt defectibus, et comecta et Mosfet cogitationes. Probabilitas defectum de eu continet huiusmodi defectus est altum, ita moderantum numerum interfectorem defectus est maxime momenti ad meliorem chip cede et reducing costs. Figura V ostendit distribution of interfectorem defectuum CL mm et CC mm sic epitaxial wafers. Sub conditione, quod non est manifestum disparitas in C / Ratio, CAROTA defectibus et cometi defectus potest basicle eliminated, cum stillabunt potestate in operationem et in reactionem ad munditiam et in thalamo, et qualis est subiectum. Ex mensa II, possumus videre quod exitiale defectus densitate CL mm et CC mm epitaxial potest esse regi in 0,3 particulas / CM2, quod est optimum gradum ad idem genus apparatu. Et exitiale defectus density control gradu de CL mm epitaxial laganum est melius quam CC mm epitaxial lagae. Hoc est quod CL mm substrati praeparatio processum est maturius quam quod CC mm, subiectum qualitas est melius, et immunditia potestate gradu CL mm mm reactionem thalamum est melius.

2.4 epitaxial laganum superficiem asperitate

Figura VI ostendit AFM imagines super superficiem CL mm et CC mm sic epitaxial wafers. As can be seen from the figure, the surface root mean square roughness Ra of 150 mm and 200 mm epitaxial wafers is 0.129 nm and 0.113 nm respectively, and the surface of the epitaxial layer is smooth, without obvious macro-step aggregation phenomenon, which indicates that the growth of the epitaxial layer always maintains the step flow growth mode during the entire epitaxial process, and no step aggregation occurs. Potest videri quod epitaxial layer cum lenis superficies potest adeptus in CL mm et CC mm humilis angulo subiecta per usura optimized epitaxial incrementum processus.

III. Conclusiones

CL mm et CC mm 4H-sic homoepitaxial wafers sunt prospere paratus in domesticis subiecta per se, developed CC mm mm epitaxial incrementum apparatu, et homepitaxial processus idoneam CL mm et CC mm est developed. Et epitaxial incrementum rate potest esse maius quam LX μm / h. Dum occurrens summus celeritate epitaxy postulationem, epitaxial laganum qualitas est optimum. The thickness uniformity of 150 mm and 200 mm SiC epitaxial wafers can be controlled within 1.5%, the concentration uniformity is less than 3%, the fatal defect density is less than 0.3 particles/cm2, and the epitaxial surface roughness root mean square Ra is less than 0.15 nm. Core processum Indicatores epitaxial lana ad provectus gradu in industria.

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