CVD sic coated laganum susceptator

In semiconductor vestibulum, epitaxy est discrimine gradum in chip productio, et laganum susceptos, ut a key component epitaxial apparatu, directe impingit in uniformitatem, et defectum rate, et efficientiam de uniforme, defectum rate, et efficientiam, et efficientiam in uniformitatem, defectum rate, et efficientiam in uniforme, et defectum rate, et efficientiam et efficientiam in uniformitatem, defectum rate, et efficientiam et efficientiam in uniformitatem, defectum rate, et efficientiam, et efficientiam in uniformitatem, defectum rate, et efficientiam, et efficientiam in uniformitatem, defectum rate, et efficientiam et ex epitaxial incrementum. Ad address in industria scriptor augendae demanda in summus puritas, summus stabilitatem materiae, Veteksemicon inducit in CVD sic-coated lagam susceptor, featuring, E10 Certified (VIII, et in Sina in provectus.

Ⅰ. Core commoda

I. industria, ducens puritatem

Et Silicon Carbide (sic) coating, deposita per eget vapor depositione (cvd), Achieves impuritatem campester of ≤100pp (E10 Latin) ut verificatur per ICP-M.). Hoc ultra-excelsum puritatem minimizes contaminationem metus per epitaxial incrementum, cursus superioris crystal qualitas ad discrimine applications ut Gallium Nitride (Gan) et Silicon Carbide (sic) wide-bandgap semiconductor vestibulum.

II. Exceptional High-Temperature Resistance & Chemical Duugutility

Et CVD sic coating tradit outstanding corporalis et eget stabilitatem:

High-temperatus patientia: firmum operationem usque ad MDC ° C sine deformatio aut deformatio;

ROSIO resistentia: resistit infestantibus epitaxial processus gasorum (E.G .: HCL, H₂), extendens ministerium vitae;

Minimum scelerisque accentus: aequet scelerisque expansion coefficiente de sicca, reducendo metus.

III. Plenus-amplitudo compatibility pro amet productio lineae

Available in VI-inch, VIII-inch et XII-inch configurations, ad susceptator sustinet diverse applications, comprehendo tertia-generationem semiconductors, potentia cogitationes et RF eu. Eius praecisione-Engineered superficiem ensures seamless integrationem cum Amta et alia mainstream epitaxial reactors, enabling celeri productio linea upgrades.

IV. Localized productio breakthrough

Leveraging proprietary CVD et post-processus technologiae, nos confringetur ad transmarinis monopolium in summus puritate sic-iactaret susceptatores, offering domestica et global customers sumptus-effective, ieiunium, partus, et localiter sustinetur alternative.

Ⅱ. Technical Excellentia

● Precision CVD processus: Optimized depositione parametri (temperatus, Gas fluxus) ensure densa, pore libero coatings cum uniformis crassitudine (deviationis ≤3%), eliminating particula contamination;

● Cleanroom faciens: Tota Productio processus, ex subiecto ad coating, qui conducted in genere C tundooms, occurrens semiconductor-gradus mundities signa;

● Customization: Tailored coating crassitudine, superficiem asperitas (Ra ≤0.5μm) et pre-coated canus treatments accelerate apparatu committerat.

Ⅲ. Applications & Customer beneficia

● Tertia-generationem semiconductor epitaxy: Specimen pro Mucvd / Mbe Drofth of Sic et Gan, ENCHNING Demoto EFFECTIO voltage et switching efficientiam;

● Silicon-fundatur epitaxy: Improves layer uniformitatem summus voltage igbts, sensoriis et Silicon cogitationes;

● PRAESTRICTUS:

Reduces epitaxial defectus, boosting chip cede;

Dimittit sustentationem frequency totalis sumptus dominium;

Accelerat Supply Chain Libertatis pro Semiconductor apparatu et materiae.

Ut a pioneer in summus puritate cvd sic-iactaret laganum susceptos in Sina, nos committitur ad progressus semiconductor vestibulum per cutting-ore technology. Nostra solutions ut reliable perficientur ut tum nova productio lineae et legatum apparatu retrofits, empowering epitaxial processus cum unmatched qualitas et efficientiam.

Basic physica proprietatibus CVD sic coating