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CVD SiC Coated Graphite Susceptor pro Wafer Carrier
  • CVD SiC Coated Graphite Susceptor pro Wafer CarrierCVD SiC Coated Graphite Susceptor pro Wafer Carrier

CVD SiC Coated Graphite Susceptor pro Wafer Carrier

VETEK CVD SiC Coated Graphite Susceptor pro Wafer Carrier est summus effectus laganum subsidium component destinatum ad processum epitaxy semiconductorem. Productum summus puritate graphite utitur ut subiecta et carbide Pii CVD uniformi obducta est (SiC) iacuit, praestantem stabilitatem scelerisque, resistentiam chemicam, et particulam ditionis praebens. Cum graphite susceptore critico componente, uncta directe sustinet intra cameram reactionem et adiuvat ut distributionem aequabilem temperaturam et condiciones incrementi epitaxialis stabilis conservet.

1. Product Commoda


  • Princeps Puritatis Material:Gradus semiconductor materialis graphita et densa SiC efficiens structuram minimize contaminationis periculum ac fidem CVD SiC graphite susceptoris obductis emendavit.
  • Praeclara Uniformitas Scelerisque:Optimized graphite structuram et SiC coating calorem firmum transferre et temperamentum laganum uniforme praebere.
  • Resistentia chemica superior:Crassa SiC tunica fortis resistentiam praebet contra vapores processus et ambitus mordax.
  • Vita servitii longi:Summus durities et induere resistentiam vetustatem meliorem sub condiciones epitaxy summus temperatus.
  • Humilis Particula Generationis:Densa CVD SiC superficies remittit particulam remissionis et processus lagani melioris constantiae.
  • Customized Design Capability:Praesto sunt diversae magnitudinis, structurae et schematismi secundum apparatum requisitorum.



2. Technical Specifications

Item
Typical Value
Substratum Material
Princeps Puritas Graphite
Coing Material
CVD Silicon Carbide (SiC)
Sic Puritas
≥99.999%
Coing Crassitudo
100 ± 20 µm.
Crassitudo coating Uniformity
Imperium intra 10 µm inter batches
Densitas CVD SiC Coating
3.21 g/cm³
Scelerisque Conductivity
300 W/m·K
Scelerisque Expansion Coefficient
4.5 10⁻⁶/K

3. Applications


  • Sic Processus Epitaxy:Susceptio graphita adhibetur ut tabellarius laganum in apparatu epitaxy SiC, sustinens SiC substratum per incrementum epitaxial summus temperatus.
  • Pii Epitaxy Processus:Applicatum est in reactoribus epitaxialibus Pii ad lagana sustinendis et condicionibus scelerisque stabilibus conservandis.
  • MOCVD Epitaxy:VETEK graphite susceptores idonei sunt ad MOCVD, LED epitaxiam, epitaxiam GaN, epitaxiam pii, et alii processus fabricandi semiconductores egregios scelerisque uniformitatis et chemicae stabilitatis requirentes.
  • Semiconductor Vestibulum Equipment:Compatible cum variis suggestis epitaxy, incluso LPE fornacibus horizontalibus, Aixtron, NuFlare, et instrumento semiconductoris affinis.



4. Cur VETEK elige?

VETEK nativus CVD SiC solutiones graphitae susceptorias emissas praebet solutiones graphitae integrantes purificationem, praecisionem machinam, CVD tunicam, et inspectionem facultatum. Nostra semiconductor-gradus graphitus susceptor productorum altam puritatem, crassitudinem aequabilem, crassitudine vestiens, optimae operationis scelerisque, et longam servitutem vitam postulandi laganum ferebat applicationes.

Hot Tags: CVD SiC Coated Graphite Susceptor, Graphite Susceptor, SiC Coated Graphite Wafer Carrier, Semiconductor Epitaxy Susceptor, MOCVD Graphite Susceptor, SiC Wafer Carrier, CVD SiC Graphite Susceptor.
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