Single wafer epi graphite susceptor

Description:

Single Wafer Epi graphite susceptator includit a paro of Graphite Tray, Graphite circulum et aliis accessiones, usura excelsum puritatem graphite substrati + vapor depositione Silicon carbide coating compositam structuram, taking in altum temperies stabilitatem, chemical inertia et in agro uniformitatem. Est core ferre pars summus praecisione epitaxial sheet in massa productio.

Material Innovation: Graphite + sic coating

Graphite

● Ultra-princeps scelerisque conductivity (> CXXX W / M · K), celeri responsio ad temperatus imperium requisitis, ut processum stabilitatem.

● humilis scelerisque expansion coefficient (cte: 4.6 × 10⁻⁶ / ° C), reducere summus temperatus deformatio, protong muneris vitae.

CVD sic coating

● Corrosio resistentia. Resistere impetu reactionem gasorum ut H₂, HCL et Sih₄. Non vitat contagione epitaxial layer per volatilizationis de basi materia.

● Superficiem densificationem: Et Minus quam 0.1% Porosity Porosity, quae prohibet contactus inter Graphite et laganum et prohibet diffusionem carbonis impudicitiis.

● Summus temperatus tolerantia: Long-terminus firmum opus in environment super MDC ° C, aptet ad altum temperatus demanda de sic epitaxy.

Thermal agri et airflow Optimization Design

Uniformis scelerisque radiation structuram

Et susceptam superficies est disposito cum multiple scelerisque reflexio striatus, et ASM fabrica scriptor scelerisque agro imperium system Achieves temperies uniformitatem intra ± 1.5 ° C (VI-inch lagesty et uniformitatem epitaxial (VI-inch lagesty et uniformitatem epitaxial).

Aeris gubernaculo ars

Edge diversion holes and inclined support columns are designed to optimize the laminar flow distribution of reaction gas on the wafer surface, reduce the difference in deposition rate caused by eddy currents, and improve doping uniformity.