LP Lple Helfmoon Sic EPI Reactor

LP Lple Helfmoon Sic EPI Reactorest a fabrica specie disposito producendo summus qualitasSilicon Carbide (SIC) epitaxiallayers ubi epitaxial processus in Lpe dimidium-luna reactionem cubiculum, ubi subiectum est patere extrema condiciones ut summus temperatus et mordax vapores. Ad curare ministerium vitae et perficientur de reactionem thalamum components, eget vapor depositione (cvd)Sic coatingsolet usus. 

LP Lple Helfmoon Sic EPI ReactorComponents:

Pelagus reactionem camera: Pelagus reactionem thalamum factum est summus temperatus resistant materiae ut Silicon carbide (sic) etGraphite, Quae maxime altum chemical corrosio resistentia et altum temperatus resistentia. Et operating temperatus est plerumque inter 1,400 ° C et 1,600 ° C, qui potest sustinere incrementum de Silicon carbide crystallis sub altum temperatus conditionibus. Operating pressura de pelagus reactionem camera inter X^-3et X^-1MBAR, et uniformitatem epitaxial augmentum potest esse coerceri a adjusting pressura.

Calefactio components: Graphite vel Silicon Carbide (microform) FORTUNA sunt plerumque solebat, quod potest providere firmum calor fons sub altum temperatus conditionibus.

Pelagus munus in LP Lple Halfmoon Sic EPI Reactor est ad epitaxially crescere summus qualis Silicon carbide films. Specie,Hoc manifestatur in sequentibus facies:

Epitaxial layer incrementumPer liquorem tempus epitaxy processus, maxime humilis-defectus epitaxial stratis potest crevit in Sic in SIC subiecta, cum incrementum rate of 1-10μm / h, qui potest maxime altum crystal qualitas. In eodem tempore, in Gas fluunt rate in pelagus reactionem camera plerumque ad 10-100 SCCM (vexillum centimetra centimetra per minute) ad ensure uniformitatem epitaxial iacuit.

High temperature stability: SIC epitaxial layers potest adhuc ponere optimum perficientur sub altum temperatus, princeps pressura, et altum frequency environments.

Redigendum defectum density: De unica structural consilio LP Lple Halfmoon Sic EPI reactor potest efficaciter reducere generatio crystal defectus in epitaxy processus, ita improving fabrica perficientur et reliability.

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SEM data de CVD sic amet Crystalli structuram:

Basic physica proprietatibus CVD sic coating：

Vetek Semiconductor LP Lpe Halfmoon Sic EPI Reactor Productio officinae: