CVD sic coating protector

Product Positioning et Core munera:

CVD sic coating protector est a key component in LPE Silicon carbide epitaxial apparatu, maxime solebat praesidio internum structuram de reactionem camera et amplio processus stabilitatem. Core munera eius includit:

Corrosion Protection: De Silicon Carbide coating formatae per eget vapor depositione (cvd) processus potest resistere chemica corrosio CHLORUM / fluorine Plasma et idoneam dura environments ut etching apparatu;

Term administratione: De excelsum scelerisque conductivity of Silicon Carbide materia can optimize temperatus uniformitatem in reactionem thalamum et amplio qualis est epitaxial iacuit;

Reducing pollutio, ut a lining component, potest ne reactionem per-products a recta contingentes thalamum et extend in apparatu sustentacionem cycle.

Technical characteres consilio

Structural Design:

Plerumque dividitur in superioribus et inferior dimidium luna partes, symmetrically installed circum lance formare anulum informibus tutela structuram;

Cooperans cum components ut scit et Gas imber capita ad optimize airflow distribution et plasma focusing effectus.

Coating processus:

Et CVD modum adhibetur deposit summus puritate sic coatings, cum a uniformitate film crassitudine in ± V% et superficiem asperitas ut low ut ra≤0.5μm;

Typicam coating crassitudine est 100-300μm, et non potest sustinere altum temperatus amet 1600 ℃.

Applicationem missionibus et perficientur commoda:

AppliBurne Equipment:

Maxime propter LP LP II-inch VIII-inch Silicon carbide epitaxial fornace, supporting sic homo homogitaxial incrementum;

Apta Etching Equipment, Mucvd Equipment et aliis missionibus requirere altum corrosio resistentia.

Key Indicatores:

Scelerisque expansion coefficient: 4.5 × 10⁻⁶ / k (matching cum graphite substrati ad redigendum scelerisque accentus);

Resistentia: 0.1-10ω · cm (conventus conductivity requisita);

Service Vita: 3-5 temporibus longior quam traditional quartz / Silicon materiae.

Technical claustra et challenges

Hoc productum necessitates ad vincere processus difficultatibus ut coating uniformitatem imperium (ut ora crassitudine ultricies) et subiectum-coating interface vinculum Optimization (Temmp3MMPA Rotation (1000rpm) et temperatus in LPPE apparatu.