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Puritas Poruus Pororous Graphite

Puritas Poruus Pororous Graphite

Puritas Poruus Pororous Graphite provisum est a Vetek Semiconductor is provectus semiconductor processus materiale. Est factum ex summus puritate carbon materia cum optimum scelerisque conductivity, bonum eget stabilitatem et optimum mechanica vires. Hoc princeps puritatem Porous Graphite ludit an maximus munus in incrementum processus unius crystallum sic. Vetisek semiconductor est committitur ad providing qualis products ad competitive prices et vultus deinceps ad decore vestri diu-term socium in china.welcome ad consulendum aliquando.
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High Quality Vetisk Semiconductor excelsum puritatem Porous Graphite est obtulerunt a Sina Manufacturer Vetisk Semiconductor. Buy Vetek Semiconductor excelsum puritatem Pororous Graphite quod est princeps qualitas directe cum low pretium.

Vetisk Semiconductor excelsum puritatem Pororous Graphite est a PALMARIUS de calor, repugnant materiae, potest resistere extrema temperaturis invenitur in semiconductor fornaces. Superior diuturnitatem et diuturnitatem significat pauciores supplementum et minus downtime, unde in significant cost peculi in tempore.

Facultat nos excelsum purissimum raro graphite a summo qualitate carbon fontes ut minimam impudicitiis et minimam periculo contaminationem. Hoc excelsum puritas est altius cedit et superior semiconductor fabrica perficientur.

Eligere princeps puritatem Porous Graphite, ubi eius eximia scelerisque stabilitatem ensures consistent perficientur, faciens ideale pro discrimine semiconductor processus.

Upgrade vestri semiconductor vestibulum hodie ad altum puritatem Pororous Graphite - A materia, quae est mutantur via nos facitis crastina technology. Contact Us Hodie de tua specifica necessitates et adscribendum in itinere innovation in semiconductor vestibulum. Lets 'opus simul creare superior semiconductor faciens futurum!


Product parametri excelsum puritatem Porous Graphite:

Typicam physica proprietatibus raro Graphite
ltems Parameter
Mole density 0.89 g / CC
Compressive fortitudinem 8,27 MPA
Flectens vires 8,27 MPA
Tensile vires 1.72 MPA
Specifica resistentia 130ω, inx10-5
Poratus L%
Mediocris PORE mole 70um
Scelerisque conductivity 12W / M * K


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Percontationes de Silicon Carbide Coating, Tantalum Carbide Coating, Graphite speciale vel indicem pretiosum, electronicam tuam nobis relinque et intra 24 horas erimus.
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