TaC Coated Graphite Susceptor

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Tantalum carbide ceramic material melting point up to 3880℃, is a high melting point and good chemical stability of the compound, its high temperature environment can still maintain stable performance, in addition, it also has high temperature resistance, chemical corrosion resistance, good chemical Et mechanica compatibility cum carbon materiae et alia characteres, faciens idealis graphite substrati tutela coating materia. Tantalum carbide coating potest efficaciter praesidio graphite components a potentia calidum ammonia, hydrogenii et Silicon vapor et conflatile metallum in dura usum environment, significantly extend in ministerium vitae graphite, et inhibere migrationem vitae in graphite, et inhibere migratio in migrari in graphite et inhibere migratio in migrationi in migrari, et inhibere migratio in graphite et inhibere migratio in migrationi in migrari, et inhibere migratio in migrari in graphite et inhibere migratio in migratione in migrari in migrationi, inhibere migratio in graphite Crystalli et qualis est maxime in Crystalli incrementum scriptor maxime in infectum Ceramic processus.

Chemical vapor depositione (CVD) est maxime mature et meliorem praeparatio modum pro tantalis carbide coating super superficiem Graphite.

CVD TaC Coating Methodus pro TaC Coated Graphite Susceptor:

Processus coatingis utitur TaCl5 et propylene ut fonte carbonis et fonte tantali respective, et argon ut tabellarius gas ut tantalum vaporem pentachloridum in cameram reactionem post gasificationem caliditatem caliditatem afferat. Sub clypeo temperatura et pressione, vapor praecursoris materia in superficie graphitae partis adsumitur, et series chemicae motus complexus ut compositione et compositione fontis carbonis et fontis Tantali occurrunt. Eodem tempore series reactionum superficierum sicut diffusio praecursoris et desorptionis per-productorum implicatur. Denique stratum densum tutelae in superficie partis graphitae formatur, quae partem graphitam tuetur ne stabilis sit sub extremis condicionibus environmental. Applicatio missionum materiae graphite signanter dilatatur.

Product parametri Tac iactaret Graphite susceptator:

Productio officinae:

Overview of the semiconductor chip epitaxy industry catena: