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Porous SiC Vacuum Chuck
  • Porous SiC Vacuum ChuckPorous SiC Vacuum Chuck

Porous SiC Vacuum Chuck

Vetek Semiconductoris Porous SiC Vacuum Chuck plerumque in instrumentis fabricandis semiconductoris elementis clavis adhiberi solet, praesertim cum ad processus CVD et PECVD venit. Vetek Semiconductor specialist in fabricandis et praestandis summus perficientur Porous SiC Vacuum Chuck. Grata pro ulterioribus percunctationibus tuis.

Vetek Semiconductor Porous SiC Vacuum Chuck maxime compositum est ex carbide Pii (SiC), materia ceramica cum praestanti effectu. Porosum SiC vacuum Chuck partes lagani in auxilio et fixatione in processus processus semiconductoris agere potest. Productum hoc apte efficere potest inter laganum et monax aptam suctu uniformi praebendo, efficaciter evitando lagani inflexionem et deformationem, ita ut in processu fundi planicies fiat. Praeterea, caliditas carbidi Pii resistentia stabilitatem craticulam efficere potest et laganum ne defluat propter expansionem scelerisque. Excepturi, provident porro.


In campo electronicorum, Porous SiC Vacuum Chuck adhiberi potest ut materia semiconductor pro laseris sectionis, fabricandi machinas potentias, modulos photovoltaicos et potentiam electronicarum partium. Excelsa eius scelerisque conductivity et caliditas resistentia optimam materiam machinarum electronicarum efficiunt. In agro optoelectronico, Porous SiC Vacuum Chuck adhiberi potest ad machinas optoelectronicas fabricandas sicut lasers, materias fasciculos et cellulas solares. Praeclara eius proprietates opticas et corrosiones resistentiae adiuvant meliores effectus et stabilitas fabrica.


Vetek Semiconductor potest providere:

1. MunditiesPost SiC tabellarius processus, insculptus, purgans et finalis partus, temperari debet ad MCC gradus per 1.5 horas, ut omnes immunditias exurant et tunc in sacculis vacuo condensentur.

2. Product Flatness: Ante locandum lagam, oportet esse supra -60Kpa cum posita super apparatu prohibere carrier a volans off per celeri tradenda. Positis lagam, oportet esse supra -70kpa. Si non-onus temperatus est minus, quam -50kpa, apparatus et servabo alerting et non agunt. Ergo in planculo a tergo est ipsum.

3. Gas Semita Design: Customized secundum elit elit.


III tempora elit temptationis:

1. Oxidationis test: nullum oxygenium (Lorem cito usque ad 900 gradus calefacit, ideo opus productum in 1100 gradibus annectari debet).

2. Metallum residuum test: Celeriter calefacit usque ad 1200 gradus, nullae immunditiae metalli dimittuntur ut laganum contaminet.

3. Vacuum test: Differentia inter pressionem et sine Wafer intra +2ka est (vis suctionis).


silicon-carbide-porous-ceramic


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Vetek semiconductor poriosus sic vacuum Chuck characteres mensam:

Silicon Carbide Porous Ceramics Characteristics Table

Vetek semiconductor poriosus sic vacuum Chucks shops:


VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry catena:


Overview of the semiconductor chip epitaxy industry chain


Hot Tags: Pororem Sic vacuum Chuck
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