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In articulus est temperatus gradiente in uno-crystal fornacem. Covers in static et dynamic calor agros per crystal incrementum, in solidum-liquidum interface, et temperatus gradiente in partes in solidificatione.

Et Taiko processum Triticum Silicon Wafers per suam principiis, technica commoda et processum origins.

VIII-inch sic epitaxial fornacem et homepitaxial processum investigationis

Articulus enucleat proprietates materiales semiconductoris laganae subiectae sicut silicon, GaAs, SiC et GaN.

Hoc articulum maxime describitur Gan-fundatur humilis-temperatus epitaxial technology, comprehendo crystal structuram de Gan-fundatur materiae, III. EPITAXIUS Technology Technology EPITAXIUS Technology, et Development Technology Technology

Hoc articulum primum introducit et corporalis proprietatibus Tac, et focuses de differentias et applications de Sina Tantalum carbide et CVD Tantalum Carbide, tum Vetisk Semiconductor est popularibus Tac coating products.