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Quid est specifica application of Tac coated partes in semiconductor agri?

Vetek Tantalum carbide coating parts



Physica proprietatibus Tantalum carbide (Tac) coating



Physica proprietatibus Tac coating
Tantalum carbide (Tac) coating density
14.3 (G / CM³)
Specifica emissivity
0.3
Thermal expansion coefficient
6.3x10-6/ K
Tac coating duritia (HK)
MM HK
Resistentia
I × X-5Ohm * cm
Scelerisque stabilitatem
00 ℃
Graphite magnitudine mutationes
-10 ~ -20um
CONGRESSUS
≥20um typical valorem (35um ± 10um)


Et applicationem de Tantalum carbide (Tac) coating in semiconductor agri


I. epitaxial incrementum reactor components

Tac coating est late in eget vapor depositione (cvd) Reactor components of Gallia Nitride (Gan) Epitaxial et Silicon Carbide (sic) epitaxialWafer carriers, Satellite acetabula, nozzles et sensoriis. Haec components requirere maxime princeps diuturnitatem et stabilitatem in altum temperatus et corrosive environments. Tac coating potest efficaciter extendere muneris vitae amplio cedat.


II. Una crystallum incrementum component

In uno crystallum incrementum processus materiae ut sic, gan et aluminium nitride (Ain),Tac coatingEst applicantur ad key components ut cruces, semen crystal holders, dux annulos et Filtra. Graphite materiae cum Tac coating potest reducere immunditia migratio, amplio crystal qualitas et redigendum vitium density.


III. High Temperature Industrial components

Tac coating potest esse in altum temperatus industriae applications ut resistentia calefactio elementa, iniectio nozzles, protegens annulos et atrium structura fixtures. Hi components postulo ponere bonum perficientur in summus temperatus environments et Tac est calor resistentia et corrosio resistentia facere idealis arbitrium.


IV. THATERS in MOCVD Systems

Tac-iactaret graphite calentium fuisse feliciter introduced in metallum organicum eget vapor depositione (Mucvd) systems. Comparari cum traditional PBN-iactaret heaters, Tac calentium potest providere meliorem efficientiam et uniformitatem, redigendum virtutem consummatio, et redigendum superficiem emissivity, ita improving integritas.


V. Wafer Carriers

Tac-iactaret laga portarentur ludere an maximus munus in praeparatione tertia-generation semiconductor materiae ut sic, Ain et Gan. Studiis ostensum est quod rate rateTac coatingsIn summus temperatus ammonia et hydrogenii ambitus est multo minus quamSic coatings, Quod facit ut ostenderet melius stabilitatem et diuturnitatem in longa-term usus.

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